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Semiconductor Grade Silicon
Semiconductor Grade Silicon
Semiconductor Grade Silicon
Description of Process
Produce metallurgical grade
silicon (MGS) by heating
silica with carbon
Purify MG silicon through a
chemical reaction to produce
a silicon-bearing gas of
trichlorosilane (SiHCl3)
SiHCl3 and hydrogen react in
a process called Siemens to
obtain pure semiconductorgrade silicon (SGS)
Reaction
SiC (s) + SiO2 (s) Si (l) + SiO(g) + CO (g)
CZ Crystal Puller
Crystal puller
and rotation
mechanism
Crystal seed
Single crystal
silicon
Molten
polysilicon
Quartz
crucible
Heat shield
Carbon heating
element
Water jacket
CYLINDER OF MONOCRYSTALLINE
In the float zone process, dopants and other impurities are rejected by
the regrowing silicon crystal. Impurities tend to stay in the liquid and
refining can be accomplished, especially with multiple passes.
Molten zone
Traveling
RF coil
RF
Seed crystal
Chuck
Inert gas out
Concentration (Atoms/cm3)
Dopant
Pentavalent
Trivalent
Material
Type
n
p
< 1014
(Very Lightly Doped)
--
--
1014 to 1016
1016 to 1019
(Lightly Doped)
(Doped)
n
p
>1019
(Heavily Doped)
Crystal
Crystal Growth
Growth
Wafer
Wafer Lapping
Lapping
and
and Edge
Edge Grind
Grind
Cleaning
Cleaning
Shaping
Shaping
Etching
Etching
Inspection
Inspection
Wafer
Wafer Slicing
Slicing
Polishing
Polishing
Packaging
Packaging
Seed crystal
Crucible
6. Edge Rounding
1. Crystal Growth
Heater
7. Lapping
2. Single Crystal Ingot
8. Wafer Etching
3. Crystal Trimming and
Diameter Grind
Slurry
9. Polishing
4. Flat Grinding
Polishing table
5. Wafer Slicing
Polishing
head
Stages of IC Fabrication
Wafer Preparation
includes crystal
growing, rounding,
slicing and polishing.
2.
Wafer Fabrication
includes cleaning,
layering, patterning,
etching and doping.
3.
Test/Sort includes
probing, testing and
sorting of each die on
the wafer.
4.
Metal connections
are made and the
chip is encapsulated.
Defective die
5.
Scribe line
A single die
Assembly
Packaging
Diameter
grind
Flat grind
Internal diameter
wafer saw
Wafer Polishing
Wafer
Slurry
Lower polishing pad
Diameter
(mm)
Thickness
(m)
Area
(cm2)
Weight
(grams/lbs)
Weight/25
Wafers (lbs)
150
200
300
400
675 20
176.71
28 / 0.06
725 20
314.16
53.08 / 0.12
775 20
706.86
127.64 / 0.28
825 20
1256.64
241.56 / 0.53
1.5
3
7
13
88 die
200-mm wafer
232 die
300-mm wafer
Quality Measures
Physical dimensions
Flatness
Microroughness
Oxygen content
Crystal defects
Particles
Bulk resistivity
Darkfield imaging
Viewing
optics
Viewing
optics
Two-way mirror
Light source
Light reflected by
surface irregularities
Lens
Lens
ts
h
g
Li
rce
u
o
Beam splitter
Laser
Pinhole
Objective lens
Wafer is driven up and
down along Z-axis
Center of focus
+Z
0
-Z
Photo detector
Reflected light
Detection of
scattered light
Incident light
Beam scanning
Wafer motion
Particle
Scattered light
V
s =
I
x 2s (ohms-cm)
Voltmeter
Wafer
(b)
V
(a)
(c)
Contact
Conductive material
(d)
Epitaxy
SPE (Solid Phase Epitaxy)
Epitaxy
Molecular epitaxy MBE (Molecular beam epitaxy)
SSMBE = SolidSource MBE,
CBE = ChemicalBeamEpitaxy,
GSMBE = GasSource MBE (HydrideSource MOMBE, MetalOrganic
MBE),
UHV ALE = UltraHighVacuum AtomicLayerEpitaxy
Organometalic epitaxy MOVPE (MetalOrganic Vapour Phase Epitaxy)
MOCVD (MetalOrganic Chemical Vapour Deposition)
Photo-MOVPE
Plasma-MOVPE
CVD
http://www.fzu.cz/oddeleni/povrchy/mbe/mbe.php
http://www.fzu.cz/oddeleni/povrchy/mbe/mbe.php
http://www.fzu.cz/texty/brana/movpe/movpe.php