HA17741/PS

General-Purpose Operational Amplifier

(Frequency Compensated)

Description

The HA17741/PS is an internal phase compensation high-performance operational amplifier, that is

appropriate for use in a wide range of applications in the test and control fields.

Features

• High voltage gain : 106 dB (Typ)

• Wide output amplitude : ±13 V (Typ) (at RL ≥ 2 kΩ)
• Shorted output protection
• Adjustable offset voltage
• Internal phase compensation

Ordering Information
Application Type No. Package
Industrial use HA17741PS DP-8
Commercial use HA17741

Pin Arrangement

Offset
1 8 NC
Null

Vin(−) 2 − 7 VCC

Vin(+) 3 + 6 Vout

4 5 Offset
VEE
Null

(Top view)
HA17741/PS

Circuit Structure

VCC

Vin(+)

Vin(−)

Vout

To VCC To VCC

VEE
1 Pin 5 Pin

Offset Null

Absolute Maximum Ratings (Ta = 25°C)

Ratings
Item Symbol HA17741PS HA17741 Unit
Power-supply voltage VCC +18 +18 V
VEE –18 –18 V
Input voltage Vin ±15 ±15 V
Differential input voltage Vin(diff) ±30 ±30 V
Allowable power dissipation PT 670 * 670 * mW
Operating temperature Topr –20 to +75 –20 to +75 °C
Storage temperature Tstg –55 to +125 –55 to +125 °C
Note: These are the allowable values up to Ta = 45°C. Derate by 8.3 mW/°C above that temperature.

2
 HA17741/PS

Electrical Characteristics

Electrical Characteristics-1 (VCC = –VEE = 15 V, Ta = 25°C)

Item Symbol Min Typ Max Unit Test Condition

Input offset voltage VIO — 1.0 6.0 mV RS ≤ 10 kΩ
Input offset current I IO — 18 200 nA
Input bias current I IB — 75 500 nA
Power-supply ∆VIO/∆VCC — 30 150 µV/V RS ≤ 10 kΩ
rejection ratio ∆VIO/∆VEE — 30 150 µV/V RS ≤ 10 kΩ
Voltage gain AVD 86 106 — dB RL ≥ 2 kΩ, Vout = ±10 V
Common-mode CMR 70 90 — dB RS ≤ 10 kΩ
rejection ratio
Common-mode input VCM ±12 ±13 — V RS ≤ 10 kΩ
voltage range
Maximum output VOP-P ±12 ±14 — V RL ≥ 10 kΩ
voltage amplitude ±10 ±13 — V RL ≥ 2 kΩ
Power dissipation Pd — 65 100 mW No load
Slew rate SR — 1.0 — V/µs RL ≥ 2 kΩ
Rise time tr — 0.3 — µs Vin = 20 mV, RL = 2 kΩ,
Overshoot Vover — 5.0 — % CL = 100 pF
Input resistance Rin 0.3 1.0 — MΩ

Electrical Characteristics-2 (VCC = –VEE = 15 V, Ta = –20 to +75°C)

Item Symbol Min Typ Max Unit Test Condition

Input offset voltage VIO — — 9.0 mV RS ≤ 10 kΩ
Input offset current I IO — — 400 nA
Input bias current I IB — — 1,100 nA
Voltage gain AVD 80 — — dB RL ≥ 2 kΩ, Vout = ±10 V
Maximum output VOP-P ±10 — — V RL ≥ 2 kΩ
voltage amplitude

3
HA17741/PS

IC Operational Amplifier Application Examples

Multivibrator

A multivibrator is a square wave generator that uses an RC circuit charge/discharge operation to generate
the waveform. Multivibrators are widely used as the square wave source in such applications as power
supplies and electronic switches.

Multivibrators are classified into three types, astable multivibrators, which have no stable states,
monostable multivibrators, which have one stable state, and bistable multivibrators, which have two stable
states.

1. Astable Multivibrator

R3

Vin(−) VCC
−
Vout

Vin(+)
C1 + R1
VEE
RL

R2

Figure 1 Astable Multivibrator Operating Circuit

Vin(+) 0

Vin(−) 0

Vertical: 5 V/div
Horizontal: 2 ms/div

Vout 0 Circuit constants

R1 = 8 kΩ, R2 = 4 kΩ
R3 = 100 kΩ, C1 = 0.1 µF
RL = ∞
VCC = 15 V, VEE = −15 V

Figure 2 HA17741 Astable Multivibrator Operating Waveform

4
 HA17741/PS
2. Monostable Multivibrator

R3

C1 VCC
− Vout
Input
0 +
C2 VEE
RL
R1
R2

Figure 3 Monostable Multivibrator Operating Circuit

Trigger input 0

Vin(+) 0

Vin(−) 0 Vertical:
Horizontal:

Circuit constants
R1 = 10 kΩ, R2 = 2 kΩ
Vout 0
R3 = 40 kΩ, C1 = 0.47 µF
C2 = 0.0068 µF
RL = ∞
VCC = 15 V, VEE = −15 V

Figure 4 HA17741 Monostable Multivibrator Operating Waveform

3. Bistable Multivibrator

Vin(−) VCC
−
Vout
Vin(+)
+
Input VEE
R1
0
C R2 RL

Figure 5 Bistable Multivibrator Operating Circuit

5
HA17741/PS

Trigger input 0

Vin(+) 0

Vertical: 5 V/div
Horizontal: 2 ms/div

Circuit constants
Vout 0
R1 = 10 kΩ, R2 = 2 kΩ
C = 0.0068 µF
RL = ∞
VCC = 15 V, VEE = −15 V

Figure 6 HA17741 Bistable Multivibrator Operating Waveform

Wien Bridge Sine Wave Oscillator

1S2074 H

R4
C3 R3 1 MΩ
2SK16 H 470 kΩ
5.1 kΩ
RS
−
Vout
500 Ω Rin +
50 kΩ
RL
C2 R2 C1 R1

Figure 7 Wien Bridge Sine Wave Oscillator

30 k
VOP-P = 2 V
VCC = 15 V,
10 k VEE = −15 V
C1 = C2/10
Oscillator Frequency f (Hz)

VOP-P = 20 V R1 = 110 kΩ,

3k R2 = 11 kΩ

1k

300

100

30

10
30 p 100 p 300 p 1,000 p 3,000 p 0.01 µ 0.03 µ 0.1 µ

C1 Capacitance (F)

Figure 8 HA17741 Wien Bridge Sine Wave Oscillator f–C Characteristics

6
 HA17741/PS

Vertical: 5 V/div
Horizontal: 0.5 ms/div

Test circuit condition

VCC = 15 V, VEE = −15 V
R1 = 110 kΩ, R2 = 11 kΩ
C1 = 0.0015 µF, C2 = 0.015 µF
Test results
f = 929.7 Hz, T.H.P = 0.06%

Figure 9 HA17741 Wien Bridge Sine Wave Oscillator Operating Waveform

Quadrature Oscillator

Sin out Cos out V4

CT1 CT2 D1 R11

− RT2
A1 − R22
+ A2
+
RT1 R44
C1
R1
D2
R33

V8

Figure 10 Quadrature Sine Wave Oscillator

Figure 10 shows the circuit diagram for a quadrature sine wave oscillator. This circuit consists of two
integrators and a limiter circuit, and provides not only a sine wave output, but also a cosine output, that is,
it also supplies the waveform delayed by 90°. The output amplitude is essentially determined by the limiter
circuit.

7
HA17741/PS

30
CT1 = 102 pF VCC = −VEE = 15 V
CT2 = 99 pF RT1 = 150 kΩ, RT2 = 150 kΩ
10 C1 = 106 pF R1 = 151.2 kΩ
R11 = 15 kΩ, R22 = 10 kΩ
R33 = 15 kΩ, R44 = 10 kΩ
CT1, CT2, C1 → 1,000 pF
3 Use a Mylar capacitor.
With VOP-P = 21 VP-P and
R22 = R44 = 10 kΩ
1.0 the frequency of the sine
wave will be under 10 kHz.
Sin out
0.3 Cos out

0.1

0.03

0.01
100 p 1,000 p 0.01 µ 0.1 µ

CT1, CT2, C1 (F)

Figure 11 HA17741 Quadrature Sine Wave Oscillator

f−CT1, CT2, C1 Characteristics

Vertical: 5 V/div
Horizontal: 0.2 ms/div
← Sin out
Circuit constants
0 CT1 = 1000 pF (990), CT2 = 1000 pF (990)
RT1 = 150 kΩ, RT2 = 150 kΩ
← Cos out C1 = 1000 pF (990), R1 = 160 kΩ
R11 = 15 kΩ, R22 = 10 kΩ
R33 = 16 V, R44 = 10 kΩ
VCC = 15 V, VEE = −15 V

Figure 12 Sine and Cosine Output Waveforms

Triangular Wave Generator

Integrator C

D1 R3
−
A1 Vout1
D2 R4 +

R1
R2
VA
+
Vout2
A2

−
R1/R2
Hysteresis comparator

Figure 13 Triangular Wave Generator Operating Circuit

8
 HA17741/PS

0
Vout1

Vout2 0
Vertical: 10 V/div
Horizontal: 10 ms/div

Circuit constants
VCC = 15 V, VEE = −15 V
VA 0
R1 = 10 kΩ, R2 = 20 kΩ
R3 = 100 kΩ, R4 = 200 kΩ
C = 0.1 µF

Figure 14 HA17741 Triangular Wave Generator Operating Waveform

Sawtooth Waveform Generator

R3

R2 6 kΩ
VA
Vin + R1
VB VC
6 kΩ + Vout
R4 − R5 I
3 kΩ 2.7 kΩ −
R7
R6 2.7 kΩ
2.7 kΩ 2SC1706 H R8
C1 2.7 kΩ
Q1
5 kΩ
VR

Figure 15 Sawtooth Waveform Generator

VR
Vertical: 5 V/div
0 Horizontal: 2 ms/div

Circuit constants
Vout VCC = 15 V, VEE = −15 V
0 R1 = 100 kΩ, C1 = 0.1 µF
Vin = 10 V

Figure 16 HA17741 Sawtooth Waveform Generator Operating Waveform

9
HA17741/PS

Characteristic Curves

Input Offset Current vs.

Voltage Offset Adjustment Circuit Power-Supply Voltage Characteristics
20

R2

Input offset current IIO (nA)

16

R1
2 12

5 6
3
1 8

R1 R
R2 4
a = 0% a = 100%
VEE 0
±3 ±6 ±9 ±12 ±15 ±18

Power-supply voltage VCC, VEE (V)

Power Dissipation vs. Voltage Gain vs.

Power-Supply Voltage Characteristics Power-Supply Voltage Characteristics
100 120
No load
Power dissipation Pd (mW)

80 110
Voltage gain AVD (dB)

60 100

40 90

RL ≥ 2 kΩ
20 80

0 70
±3 ±6 ±9 ±12 ±15 ±18 ±3 ±6 ±9 ±12 ±15 ±18

Power-supply voltage VCC, VEE (V) Power-supply voltage VCC, VEE (V)

10
 HA17741/PS

Maximum Output Voltage Amplitude vs. Input Offset Voltage vs.

Power-Supply Voltage Characteristics Ambient Temperature Characteristics
20 5
RL ≥ 2 kΩ VCC = +15 V
Maximum output voltage amplitude

VEE = −15 V

Input offset voltage VIO (mV)

RS ≤ 10 kΩ
16 4
±VOP-P (V)

12 3
P
P-
O
+V

8
P
2
P-
O
−V

4 1

0 0
±3 ±6 ±9 ±12 ±15 ±18 −20 0 20 40 60 80
Power-supply voltage VCC, VEE (V) Ambient temperature Ta (°C)

Input Offset Current vs. Input Bias Current vs.

Ambient Temperature Characteristics Ambient Temperature Characteristics
20 120
Input offset current IIO (nA)

100
Input bias current IIB (nA)

16

80
12
60

8
VCC = +15 V 40
VEE = −15 V
4 VCC = +15 V
20
VEE = −15 V

0 0
−20 0 20 40 60 80 −20 0 20 40 60 80

Ambient temperature Ta (°C) Ambient temperature Ta (°C)

11
HA17741/PS

Power Dissipation vs. Voltage Gain vs.

Ambient Temperature Characteristics Ambient Temperature Characteristics
90 120
VCC = +15 V
VEE = −15 V
Power dissipation Pd (mW)

No load
80 110

Voltage gain AVD (dB)

70 100

60 90

50 80 VCC = +15 V
VEE = −15 V
RL ≥ 2 kΩ
40 70
−20 0 20 40 60 80 −20 0 20 40 60 80

Ambient temperature Ta (°C) Ambient temperature Ta (°C)

Maximum Output Voltage Amplitude vs. Output Shorted Current vs.

Ambient Temperature Characteristics Ambient Temperature Characteristics
16 20
Maximum output voltage amplitude

VO = VCC
Output shorted current IOS (mA)

12 VCC = +15 V
16 VEE = −15 V
8
VOP-P (V)

4 12

0
VCC = +15 V 8
−4 VEE = −15 V
RL = 10 kΩ
−8 4

−12
0
−20 0 20 40 60 80 −20 0 20 40 60 80

Ambient temperature Ta (°C) Ambient temperature Ta (°C)

12
 HA17741/PS

Maximum Output Voltage Amplitude vs. Offset Adjustment

Load Resistance Characteristics Characteristics
16 1.6
VCC = +15 V, VEE = −15 V
Maximum output voltage amplitude

R1 = 51 Ω, R2 = 5.1 kΩ
12 1.2 See the voltage offset
adjustment circuit diagram.

Output voltage Vout (V)

8 0.8
R = 10 kΩ
0.4
VOP-P (V)

4 R = 5 kΩ

0
0
−0.4
−4 VCC = +15 V R = 20 kΩ
VEE = −15 V
−0.8
−8
−1.2
−12
−1.6
200 500 1 k 2k 5 k 10 k 0 20 40 60 80 100
Load resistance RL (Ω) Resistor position a (%)

Maximum Output Voltage Amplitude vs. Input Resistance vs.

Frequency Characteristics Frequency Characteristics
28 1.4
Maximum output voltage amplitude

24 1.2
Input resistance Rin (MΩ)

20 1.0
VOP-P (V)

16 0.8

12 0.6

VCC = +15 V
8 0.4
VEE = −15 V
RL = 10 kΩ
4 0.2

0 0
100 200 500 1k 2k 5k 10 k 20 k 50 k 100 k 200 k 500 k 100 200 500 1k 2k 5k 10 k 20 k 50 k 100 k 200 k 500 k 1M

Frequency f (Hz) Frequency f (Hz)

13
HA17741/PS

Phase vs. Voltage Gain vs

Frequency Characteristics Frequency Characteristics
40 120
VCC = +15 V VCC = +15 V
VEE = −15 V 100 VEE = −15 V
0
Open loop Open loop

Voltage gain AVD (dB)

80
−40
Phase φ (deg.)

60
−80
40

−120
20

−160
0

−200 −20

40
−240 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k 200 k 500 k 1 M 2 M
50 100 200 500 1k 2k 5k 10 k 20 k 50 k 100 k 200 k 500 k 1 M 2M

Frequency f (Hz) Frequency f (Hz)

Voltage Gain and Phase vs. Voltage Gain and Phase vs.
Frequency Characteristics (1) Frequency Characteristics (2)
120 120
VCC = +15 V VCC = +15 V
VEE = −15 V VEE = −15 V
Voltage gain AVD (dB)

100 100
Voltage gain AVD (dB)

Closed loop gain = 60 dB 0 Closed loop gain = 40 dB 0

Phase φ (deg.)

80 80

Phase φ (deg.)
60 −60 −60
φ 60
φ
40 40
AVD −120 −120
20 20
AVD
0 −180 0 −180

−20 −20
10 20 50 100 200 500 1k 2k 5 k 10 k 20 k 50 k 100 k 200 k 500 k 1 M 2 M
−40
10 20 50 100 200 500 1k 2k 5 k 10 k 20 k 50 k 100 k 200 k 500 k 1 M 2 M
Frequency f (Hz)
Frequency f (Hz)

14
 HA17741/PS

Voltage Gain and Phase vs. Voltage Gain and Phase vs.
Frequency Characteristics (3) Frequency Characteristics (4)
120 120
Voltage gain AVD (dB)

Voltage gain AVD (dB)

100 100
φ 0 φ 0

Phase φ (deg.)

Phase φ (deg.)
80 80

60 VCC = +15 V −60 60 VCC = +15 V −60

VEE = −15 V VEE = −15 V
40 Closed loop gain = 20 dB 40 Closed loop gain = 0 dB
AVD −120 −120
20 20
AVD
0 −180 0 −180

−20 −20

−40 −40
10 20 50 100 200 500 1k 2k 5 k 10 k 20 k 50 k 100 k 200 k 500 k 1 M 2 M 10 20 50 100 200 500 1k 2k 5 k 10 k 20 k 50 k 100 k 200 k 500 k 1 M 2 M

Frequency f (Hz) Frequency f (Hz)

Impulse Response Rise time vs.

Characteristics Test Circuit Power-Supply Voltage Characteristics
0.8
Vin = 20 mV
RL = 2 kΩ
2 CL = 100 pF
6 Vout 0.6
3
Rise time tr (µs)

CL RL
Vin

0.4

V2
Vout = × 100 (%)
V1 0.2
V2
90%
Vout V1
0
10% ±3 ±6 ±9 ±12 ±15 ±18
tr
Power-supply voltage VCC, VEE (V)

15
HA17741/PS

Overshoot vs. Impulse Response

Power-Supply Voltage Characteristics Characteristics
40 40
VCC = +15 V
Vin = 20 mV VEE = −15 V
RL = 2 kΩ RL = 2 kΩ

Output voltage Vout (mV)

CL = 100 pF 30 CL = 100 pF
Overshoot Vover (%)

30 Vin = 20 mV

20
20

10

10
0

0
±3 ±6 ±9 ±12 ±15 ±18 0 0.4 0.8 1.2 1.6
Power-supply voltage VCC, VEE (V) Time t (µs)

16
 HA17741/PS

Package Dimensions

Unit: mm

9.6
10.6 Max
8 5

7.4 Max
6.3
1 4
0.89 1.3

1.27 Max 7.62

2.54 Min 5.06 Max
0.1 Min

+ 0.10
0.25 – 0.05

2.54 ± 0.25 0.48 ± 0.10 0° – 15°

Hitachi Code DP-8

JEDEC Conforms
EIAJ Conforms
Mass (reference value) 0.54 g

17
HA17741/PS

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.

Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL NorthAmerica : http:semiconductor.hitachi.com/
Europe : http://www.hitachi-eu.com/hel/ecg
Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan : http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor Hitachi Europe GmbH Hitachi Asia Pte. Ltd. Hitachi Asia (Hong Kong) Ltd.
(America) Inc. Electronic components Group 16 Collyer Quay #20-00 Group III (Electronic Components)
179 East Tasman Drive, Dornacher Straβe 3 Hitachi Tower 7/F., North Tower, World Finance Centre,
San Jose,CA 95134 D-85622 Feldkirchen, Munich Singapore 049318 Harbour City, Canton Road, Tsim Sha Tsui,
Tel: <1> (408) 433-1990 Germany Tel: 535-2100 Kowloon, Hong Kong
Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0 Fax: 535-1533 Tel: <852> (2) 735 9218
Fax: <49> (89) 9 29 30 00 Fax: <852> (2) 730 0281
Hitachi Europe Ltd. Hitachi Asia Ltd. Telex: 40815 HITEC HX
Electronic Components Group. Taipei Branch Office
Whitebrook Park 3F, Hung Kuo Building. No.167,
Lower Cookham Road Tun-Hwa North Road, Taipei (105)
Maidenhead Tel: <886> (2) 2718-3666
Berkshire SL6 8YA, United Kingdom Fax: <886> (2) 2718-8180
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright ' Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.

18
This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.