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AO4614B
AO4614B
Features
n-channel
VDS (V) = 40V,
RDS(ON)< 30m
RDS(ON)< 38m
p-channel
VDS (V) = -40V,
RDS(ON)< 45m
RDS(ON)< 63m
-RoHS Compliant
-AO4614BL is Halogen Free
ID = 6A (VGS=10V)
(VGS=10V)
(VGS=4.5V)
ID = -5A (VGS=-10V)
(VGS= -10V)
(VGS= -4.5V)
D1
D2
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G1
G2
S1
S2
SOIC-8
p-channel
n-channel
Absolute Maximum Ratings TA=25C unless otherwise noted
Parameter
Max n-channel
Symbol
V
Drain-Source Voltage
40
DS
VGS
Gate-Source Voltage
20
Continuous Drain
Current A
Pulsed Drain Current B
TA=70C
-5
-4
30
-30
IAR
14
-20
EAR
9.8
20
1.28
1.28
-55 to 150
-55 to 150
TJ, TSTG
ID
IDM
PD
Symbol
RJA
RJL
RJA
RJL
Units
V
20
TA=25C
Avalanche Current B
Power Dissipation
Max p-channel
-40
mJ
W
C
Device
n-ch
n-ch
n-ch
Typ
48
74
35
Max
62.5
110
50
Units
C/W
C/W
C/W
p-ch
p-ch
p-ch
48
74
35
62.5
110
50
C/W
C/W
C/W
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AO4614B
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Conditions
Min
ID=250A, VGS=0V
40
1
TJ=55C
IGSS
VDS=VGS ID=250A
1.7
ID(ON)
VGS=10V, VDS=5V
30
RDS(ON)
100
VGS=10V, ID=6A
TJ=125C
VGS=4.5V, ID=5A
gFS
Forward Transconductance
VSD
IS=1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
VDS=5V, ID=6A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Rg
Gate resistance
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge
Qg (4.5V) Total Gate Charge
Qgs
Qgd
tD(on)
tr
Max
Units
V
VDS=40V, VGS=0V
VGS(th)
IS
Typ
2.5
A
nA
V
A
24
30
36
45
30
38
19
0.76
516
m
S
650
pF
82
pF
43
pF
4.6
VGS=10V, VDS=20V,
ID=6A
8.9
10.8
nC
4.3
5.6
nC
2.4
nC
1.4
nC
Turn-On DelayTime
6.4
ns
3.6
ns
16.2
ns
6.6
ns
tD(off)
Turn-Off DelayTime
tf
trr
IF=6A, dI/dt=100A/s
18
Qrr
10
24
ns
nC
A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value
in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient.
9
D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.
12
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA
curve provides a single pulse rating.
Rev0 : Sept 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
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AO4614B
30
10V
35
5V
30
4.5V
20
25
4V
ID(A)
ID (A)
VDS=5V
25
20
15
15
10
10
125C
VGS=3.5V
25C
5
0
0
2.5
VDS (Volts)
Fig 1: On-Region Characteristics
4.5
1.8
34
Normalized On-Resistance
VGS=4.5V
32
RDS(ON) (m)
3.5
VGS(Volts)
Figure 2: Transfer Characteristics
36
30
28
26
VGS=10V
24
22
20
1.6
VGS=10V
ID=6A
1.4
1.2
VGS=4.5V
ID=5A
1
0.8
0.6
10
15
-50
20
100
80
ID=6A
70
-25
25
50
75
100
125
150
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
9
12
10
60
50
IS (A)
RDS(ON) (m)
125C
40
125C
25C
0.01
25C
30
0.1
0.001
20
0.0001
10
3
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO4614B
10
VDS=20V
ID= 6A
Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss
600
400
Crss
200
Coss
0
0
10
10
20
30
40
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
1000
100
TJ(Max)=150C
TA=25C
10s
100s
1
RDS(ON)
limited
1ms
10ms
0.1s
1s
10s
0.1
TJ(Max)=150C
TA=25C
DC
Power (W)
ID (Amps)
10
10
10
1
0.00001
0.01
0.1
100
100
0.001
0.1
10
1000
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
9
12
10
D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJA=74C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
10
100
1000
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AO4614B
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Conditions
Min
-40
-1.7
ID(ON)
-30
RDS(ON)
TJ=125C
VGS= -4.5V, ID= -4A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Rg
Gate resistance
SWITCHING PARAMETERS
Qg (-10V) Total Gate Charge
Qg (-4.5V) Total Gate Charge
Qgs
Qgd
tD(on)
tr
nA
V
100
Forward Transconductance
-5
IGSS
VSD
Units
-1
TJ=55C
gFS
Max
VGS(th)
IS
Typ
-2
A
36
45
52
65
50
63
13
-0.76
940
VGS=0V, VDS= -20V, f=1MHz
-3
S
-1
-2
1175
pF
97
pF
72
pF
14
17
22
nC
7.9
10
nC
3.4
nC
3.2
nC
Turn-On DelayTime
6.2
ns
8.4
ns
44.8
ns
41.2
ns
tD(off)
Turn-Off DelayTime
tf
trr
21
Qrr
14
27
ns
nC
A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with
2
A:T The
value of R JA is in
measured
with
the device
mounted
FR-4
board board
with 2oz.
Copper,
a still air
environment
with
any given
application
depends
onon
the1in
user's
specific
design.
Thein
current
rating
is based on
theTA =25C. The
A =25C. The value
value
anythermal
a givenresistance
application
depends on the user's specific board design. The current rating is based on the t 10s thermal resistance
t in10s
rating.
rating.
B: Repetitive rating, pulse width limited by junction temperature.
9
B:
rating,
pulse
limitedimpedence
by junctionfrom
temperature.
the sum
of width
the thermal
junction to lead RJL and lead to ambient.
C.Repetitive
The R JA is
12
C.
the sum of theinthermal
from
to using
lead R<300
to ambient.
JA ischaracteristics
JL and
D.The
TheRstatic
Figuresimpedence
1 to 6,12,14
arejunction
obtained
s lead
pulses,
duty cycle 0.5% max.
2 using 80 s pulses, duty cycle 0.5% max.
D.
The
static
characteristics
in
Figures
1
to
6,12,14
are
obtained
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with
E.
performed
with the
devicepulse
mounted
on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The
=25C.tests
The are
SOA
curve provides
a single
rating.
T AThese
SOA
provides
Rev0curve
: Sept
2007 a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
www.aosmd.com
AO4614B
30
VDS=-5V
-10V
25
-5V
-4V
-4.5V
20
-ID(A)
20
-ID (A)
25
15
VGS=-3.5V
10
15
10
125C
25C
0
0
1.5
-VDS (Volts)
Fig 12: On-Region Characteristics
2.5
3.5
4.5
-VGS(Volts)
Figure 13: Transfer Characteristics
65
1.7
Normalized On-Resistance
60
VGS=-4.5V
55
RDS(ON) (m)
50
45
40
VGS=-10V
35
VGS=-10V
ID=-5A
1.5
1.3
1.1
VGS=-4.5V
ID=-4A
0.9
0.7
30
0
10
15
-50
20
-ID (A)
Figure 14: On-Resistance vs. Drain Current and
Gate Voltage
-25
25
50
75
100
125
150
Temperature (C)
Figure 15: On-Resistance vs. Junction
Temperature
130
100
ID=-5A
9
12
10
110
-IS (A)
RDS(ON) (m)
1
90
70
125C
50
125C
0.1
25C
0.01
0.001
25C
0.0001
30
3
10
-VGS (Volts)
Figure 16: On-Resistance vs. Gate-Source Voltage
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 17: Body-Diode Characteristics
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AO4614B
1200
6
4
Ciss
1000
Capacitance (pF)
8
-VGS (Volts)
1400
VDS=-20V
ID= -5A
800
600
400
Crss
Coss
200
0
0
0
12
15
18
10
20
40
-VDS (Volts)
Figure 19: Capacitance Characteristics
Qg (nC)
Figure 18: Gate-Charge Characteristics
1000
100
TJ(Max)=150C
TA=25C
10s
100s
1
RDS(ON)
limited
0.1
TJ(Max)=150C
TA=25C
1ms
10ms
0.1s
1s
10s
DC
Power (W)
10
-ID (Amps)
30
10
10
1
0.00001
0.01
0.1
100
100
0.001
0.1
10
1000
-VDS (Volts)
10
D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJA=74C/W
9
12
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
Ton
0.01
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
10
100
1000
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