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2N3819

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SILICON
N-CHANNEL JFET

The CENTRAL SEMICONDUCTOR 2N3819 is a silicon


N-Channel JFET designed for RF amplifier and mixer
applications.

MARKING: FULL PART NUMBER

TO-92 CASE
MAXIMUM RATINGS: (TA=25C)
Drain-Gate Voltage
Drain-Source Voltage
Gate-Source Voltage

SYMBOL
VDG
VDS
VGS
IG

Continuous Gate Current


Power Dissipation
Operating and Storage Junction Temperature

PD
TJ, Tstg

ELECTRICAL
SYMBOL
IGSS
IGSS

CHARACTERISTICS: (TA=25C unless otherwise noted)


TEST CONDITIONS
MIN
VGS=15V
VGS=15V, TA=100C

IDSS

VDS=15V
IG=1.0A

BVGSS
VGS(OFF)
VGS

|Yfs|
|Yfs|
|Yos|

VDS=15V,
VDS=15V,

2.0

25

UNITS
V

25

25

10

mA

360

mW

-65 to +150

MAX
2.0

UNITS
nA

2.0

20

mA

25
ID=2.0nA

ID=200A
VDS=15V, VGS=0, f=1.0MHz
VDS=15V, VGS=0, f=100MHz

V
8.0

0.5

7.5

2.0

6.5

mS

1.6

mS

VGS=0, f=1.0kHz
VGS=0, f=1.0MHz

50

Ciss

VDS=15V,
VDS=15V,

8.0

pF

Crss

VDS=15V, VGS=0, f=1.0MHz

4.0

pF

R1 (9-January 2014)

2N3819
SILICON
N-CHANNEL JFET

TO-92 CASE - MECHANICAL OUTLINE

LEAD CODE:
1) Drain
2) Gate
3) Source
MARKING:
FULL PART NUMBER

TYPICAL ELECTRICAL CHARACTERISTICS

R1 (9-January 2014)
w w w. c e n t r a l s e m i . c o m

2N3819
SILICON
N-CHANNEL JFET

R1 (9-January 2014)
w w w. c e n t r a l s e m i . c o m

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