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DO35
DO35
Vishay Semiconductors
Features
For general purpose applications
This diode features low turn-on voltage
and high breakdown voltage. This device
is protected by a PN junction guard ring
against excessive voltage, such as
electrostatic discharges
This diode is also available in a MiniMELF
case with type designation LL41
AEC-Q101 qualified
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
definition
94 9367
Mechanical Data
Case: DO-35
Weight: approx. 125 mg
Cathode Band Color: black
Packaging Codes/Options:
TR/10 k per 13" reel (52 mm tape), 50 k/box
TAP/10 k per Ammopack (52 mm tape), 50 k/box
Parts Table
Part
BAT41
Ordering code
Type Marking
Remarks
BAT41-TR or BAT41-TAP
BAT41
Test condition
Symbol
Value
VRRM
100
IF
1001)
mA
IFRM
3501)
mA
tp = 10 ms
IFSM
7501)
mA
Ptot
1)
mW
Tamb = 65 C
200
Unit
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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BAT41
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
RthJA
3001)
K/W
Tj
125
Tamb
- 65 to + 125
Tstg
- 65 to + 150
Junction temperature
1)
Electrical Characteristics
Tamb = 25 C, unless otherwise specified
Parameter
Reverse breakdown voltage2)
Leakage current2)
Forward voltage2)
Diode capacitance
2)
Test condition
Symbol
Min.
Typ.
IR = 100 A
V(BR)
100
110
VR = 50 V, Tj = 25 C
IR
100
nA
VR = 50 V, Tj = 100 C
IR
20
IF = 1 mA
VF
450
mV
1000
mV
IF = 200 mA
VF
VR = 1 V, f = 1 MHz
CD
400
Max.
Unit
V
pF
Typical Characteristics
Tamb = 25 C, unless otherwise specified
100000
IR - Reverse Leakage Current (nA)
250
200
150
100
50
Tj = 125 C
10000
20225
50
100
Tamb - Ambient Temperature (C)
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2
50 C
100
25 C
10
1
150
75 C
1000
0
0
100 C
20226
10 20 30 40 50 60 70 80 90 100
VR - Reverse Voltage (V)
For technical questions within your region, please contact one of the following: Document Number 85659
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Rev. 1.6, 12-Aug-10
BAT41
Vishay Semiconductors
1000
5.0
CD - Diode Capacitance (pF)
4.5
100
T j = 125 C
10
1
- 40 C
0.1
25 C
0.01
0
200
18641
400
600
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
800
1000
1200
20227
10
15
20
25
30
35
40
26 (1.024) min.
1.5 (0.059)
26 (1.024) min.
1.7 (0.067)
Cathode identification
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishays terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
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