isc Product Specification

INCHANGE Semiconductor

isc N-Channel MOSFET Transistor

IRF152

DESCRIPTION
Drain Current ID=33A@ TC=25
Drain Source Voltage: VDSS= 100V(Min)
Static Drain-Source On-Resistance
: RDS(on) =0.08(Max)
High Power,High Speed Applications
APPLICATIONS
Switching power supplies
UPS
Motor controls
High energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage (VGS=0)

100

VGS

Gate-Source Voltage

20

Drain Current-continuous@ TC=25

33

Total Dissipation@TC=25

150

Max. Operating Junction Temperature

150

-55~150

MAX

UNIT

0.83

/W

ID
Ptot
Tj
Tstg

Storage Temperature Range

THERMAL CHARACTERISTICS
SYMBOL
Rth j-c

PARAMETER
Thermal Resistance,Junction to Case

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isc Product Specification

INCHANGE Semiconductor

isc N-Channel MOSFET Transistor

IRF152

ELECTRICAL CHARACTERISTICS (TC=25)

SYMBOL

PARAMETER

CONDITIONS

MIN

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0; ID=250A

100

VGS(TH)

Gate Threshold Voltage

VDS= VGS; ID=250A

2.0

RDS(ON)

Drain-Source On-stage Resistance

IGSS

TYPE

MAX

UNIT
V

4.0

VGS=10V; ID=20A

0.08

Gate Source Leakage Current

VGS=20V;VDS=0

100

nA

IDSS

Zero Gate Voltage Drain Current

VDS=100V; VGS=0

250

uA

VSD

Diode Forward Voltage

IS=33A; VGS=0

2.3

Ciss

Input Capacitance

3000
VDS=25V;

Crss

Reverse Transfer Capacitance

VGS=0V;

500

pF

fT=1MHz
Coss
tr

Output Capacitance

1500

Rise Time

450
VGS=10V;

td(on)

Turn-on Delay Time

RGS=50

75

ID=20A;
tf

Fall Time

VDD=75V;

ns
200

RL=50
td(off)

Turn-off Delay Time

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300

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isc & iscsemi is registered trademark