TiEU ^,mL-C-.ona.

uatoi

, One..

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.

TELEPHONE: (973) 376-2922

(212) 227-6005
FAX: (973) 376-8960

INVERTER THYRISTOR
C458
53nm / 1400V / 2000Arrns / 35us
Type C458 reverse blocking thyristor is suitable for inverter applications. The silicon junction is
manufactured by the all-diffused process and utilizes the field-proven, interdigitated amplifying gate
structure. It is supplied in an industry accepted disc-type package, ready to mount using commercially
available heat dissipators and mechanical clamping hardware.

ON-STATE CHARACTERISTICS

MODEL

V DRM '/ VRRM

Oto+125C

C458PD

1400

1300

C458PB

1200

1100

C458P

1000

900

@
-40C

volts

Gate Drive Requirements:

20 V / 20 ohms / O.Sus risetime
5 - 10 us minimum duration
External Clamping Force
5000 - 6000 Ibs.
24.5 - 26.7 kN

GMMM1 <A>

MECHANICAL OUTLINE

THERMAL IMPEDANCE

20 5

B 0

= 2.96 in (75.2 iraj

= 1.90 in (48.3 ion)
1.0T7 in (27.2 ran)

[lziiE.iiJ ^mL~(Lona.uctoi tJ^toaucti, tine.

Cs

20 STERN AVE.

TELEPHONE: (973) 376-2922

(212)227-6005
FAX: (973) 376-8960

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

C458
LIMITING CHARACTERISTICS
PARAMETER

TEST
CONDITIONS

LIMIT

UNITS

Repetitive peak offstate & reverse

voltage

VDRM^RR

T, = -40
to+125"C

up to
1400V

volts

Off-state & re verse

current

IDRM/IRRM

T = 125"C

65

ma

Peak half cycle

non-repetitive

ITSM

60Hz (8,3ms)
50Hz(10ms)

16
14.6

kA

Forfusing

I2t

8.3ms

1.06

MA2s

On-state voltage

V^

IT = 4000A
t p = 8.3ms
T = 25C

2.6

volts

Critical rate of
rise of on-state
current

di/dt

400

A/us

Critical rate of
rise of off-state
voltage

dv/dt

500

v/us

Reverse recovery
charge

QRR

surge current

Circuit commutated
turn-off time

60Hz
Tj=125"C

T. = 125"C

tQ

.T^ 125C
VR>-50V
@ 100 A/us
400

uC

200V/US to 80% V D
Vr= -50 V

us

35

MUK mm won* i,>

Quality Semi-Conductors