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  • Isc N-Channel MOSFET Transistor 2N65: INCHANGE Semiconductor Product Specification

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    Testronicparts
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    This document specifies the isc N-Channel MOSFET Transistor 2N65. It lists the key features as a drain current of 2A at 25°C, a drain-source voltage of 650V minimum, and a static drain-source on-resistance of 5.0 ohms maximum. The transistor is suitable for applications such as switching power supplies, converters, and motor controls. The document provides maximum ratings and electrical characteristics for the transistor such as a drain-source breakdown voltage of 650V minimum and a gate threshold voltage of 2.0-4.0V.

    Original Description:

    esquemático

    Original Title

    10N65

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    This document specifies the isc N-Channel MOSFET Transistor 2N65. It lists the key features as a drain current of 2A at 25°C, a drain-source voltage of 650V minimum, and a static drain-source on-resistance of 5.0 ohms maximum. The transistor is suitable for applications such as switching power supplies, converters, and motor controls. The document provides maximum ratings and electrical characteristics for the transistor such as a drain-source breakdown voltage of 650V minimum and a gate threshold voltage of 2.0-4.0V.

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    © All Rights Reserved
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    5 views2 pages

    Isc N-Channel MOSFET Transistor 2N65: INCHANGE Semiconductor Product Specification

    Uploaded by

    Testronicparts
    This document specifies the isc N-Channel MOSFET Transistor 2N65. It lists the key features as a drain current of 2A at 25°C, a drain-source voltage of 650V minimum, and a static drain-source on-resistance of 5.0 ohms maximum. The transistor is suitable for applications such as switching power supplies, converters, and motor controls. The document provides maximum ratings and electrical characteristics for the transistor such as a drain-source breakdown voltage of 650V minimum and a gate threshold voltage of 2.0-4.0V.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
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    of 2

    isc Product Specification

    INCHANGE Semiconductor

    isc N-Channel MOSFET Transistor

    2N65

    FEATURES
    Drain Current ID= 2A@ TC=25
    Drain Source Voltage: VDSS= 650V(Min)
    Static Drain-Source On-Resistance
    : RDS(on) = 5.0(Max)
    Fast Switching
    APPLICATIONS
    Switching power supplies,converters,AC and DC motor controls

    ABSOLUTE MAXIMUM RATINGS(Ta=25


    )
    SYMBOL

    PARAMETER

    VALUE

    UNIT

    VDSS

    Drain-Source Voltage

    650

    VGS

    Gate-Source Voltage-Continuous

    30

    ID

    Drain Current-Continuous

    IDM

    Drain Current-Single Plused

    PD

    Total Dissipation @TC=25

    54

    Tj

    Max. Operating Junction Temperature

    150

    -55~150

    Tstg

    Storage Temperature

    THERMAL CHARACTERISTICS
    SYMBOL

    PARAMETER

    MAX

    UNIT

    Rth j-c

    Thermal Resistance, Junction to Case

    2.32

    /W

    Rth j-a

    Thermal Resistance, Junction to Ambient

    62.5

    /W

    isc websitewww.iscsemi.com

    isc & iscsemi is registered trademark

    isc Product Specification

    INCHANGE Semiconductor

    isc N-Channel MOSFET Transistor

    2N65

    ELECTRICAL CHARACTERISTICS
    TC=25
    unless otherwise specified
    SYMBOL

    V(BR)DSS

    PARAMETER

    CONDITIONS

    MIN

    Drain-Source Breakdown Voltage

    VGS= 0; ID=250A

    650

    Gate Threshold Voltage

    VDS= VGS; ID=250A

    2.0

    Diode Forward On-voltage

    RDS(on)

    TYPE

    MAX

    UNIT

    4.0

    IS= 2A ;VGS= 0

    1.4

    Drain-Source On-Resistance

    VGS= 10V; ID= 1A

    5.0

    IGSS

    Gate-Body Leakage Current

    VGS= 30V;VDS= 0

    100

    nA

    IDSS

    Zero Gate Voltage Drain Current

    VDS=650V; VGS= 0

    10

    VGS(th)
    VSD

    isc websitewww.iscsemi.com

    isc & iscsemi is registered trademark

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