isc Product Specification

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

2SB526

DESCRIPTION
Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V(Min)
Good Linearity of hFE
Complement to Type 2SD356

APPLICATIONS
Designed for AF high power dirver applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-90

VCEO

Collector-Emitter Voltage

-80

VEBO

Emitter-Base Voltage

-5

-0.8

IC

Collector Current-Continuous
Collector Power Dissipation
@ Ta=25

PC

TJ

Tstg

W
Collector Power Dissipation
@ TC=25

10

Junction Temperature

150

-55~150

Storage Temperature Range

isc websitewww.iscsemi.cn

isc & iscsemi is registered trademark

isc Product Specification

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

2SB526

ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified
SYMBOL

PARAMETER

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -10mA; RBE=

-80

V(BR)CBO

Collector-Base Breakdown Voltage

IC= -1mA; IE= 0

-90

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= -1mA; IC= 0

-5

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -0.3A; IB= -30mA

VBE(on)

Base-Emitter On Voltage

IC= -50mA; VCE= -4V

ICEO

Collector Cutoff Current

VCE= -80V; RBE=

-1

mA

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-10

hFE

DC Current Gain

IC= -0.3A; VCE= -4V

CONDITIONS

MIN

TYP.

MAX

-1.0

0.7

55

UNIT

300

hFE Classifications
C

55-110

90-180

150-300

isc websitewww.iscsemi.cn

isc & iscsemi is registered trademark