isc Product Specification

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

2SB874

DESCRIPTION
Collector-Emitter Breakdown Voltage: V(BR)CEO= -60V(Min)
Low Collector Saturation Voltage
: VCE(sat)= -1.0V(Max)@IC= -1.5A
Complement to Type 2SD1177

APPLICATIONS
Designed for low frequency power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-100

VCEO

Collector-Emitter Voltage

-60

VEBO

Emitter-Base Voltage

-5

IC

Collector Current-Continuous

-2

ICM

Collector Current-Peak

-3

PC

Total Power Dissipation

@ TC=25

20

TJ

Junction Temperature

150

-55~150

Tstg

Storage Temperature Range

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isc & iscsemi is registered trademark

isc Product Specification

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

2SB874

ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified
SYMBOL

PARAMETER

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -10mA; RBE=

-60

V(BR)CBO

Collector-Base Breakdown Voltage

IC= -1mA; IE= 0

-100

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= -1mA; IC= 0

-5

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -1.5A; IB= -0.15A

-1.0

VBE(on)

Base-Emitter On Voltage

IC= -2A; VCE= -5V

-1.4

ICBO

Collector Cutoff Current

VCB= -80V; IE= 0

-1.0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-1.0

hFE-1

DC Current Gain

IC= -0.5A; VCE= -5V

60

hFE-2

DC Current Gain

IC= -2A; VCE= -5V

40

COB

Collector Output Capacitance

IE= 0; VCB= -10V; f= 1MHz

CONDITIONS

MIN

TYP.

MAX

UNIT

200

50

pF

hFE-1 Classifications
B

60-120

100-200

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