isc Product Specification

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

2SB923

DESCRIPTION
High Collector Current:: IC= -20A
Low Collector Saturation Voltage
: VCE(sat)= -0.5V(Max)@IC= -10A
Complement to Type 2SD1239

APPLICATIONS
Designed for large current switching of relay drivers, highspeed inverters, converters applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-120

VCEO

Collector-Emitter Voltage

-80

VEBO

Emitter-Base Voltage

-6

IC

Collector Current-Continuous

-20

PC

Total Power Dissipation

@ TC=25

100

TJ

Junction Temperature

150

-55~150

Tstg

Storage Temperature Range

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isc Product Specification

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

2SB923

ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified
SYMBOL

PARAMETER

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -1mA; RBE=

-80

V(BR)CBO

Collector-Base Breakdown Voltage

IC= -1mA; IE= 0

-120

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= -1mA; IC= 0

-6

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -10A; IB= -1A

-0.5

ICBO

Collector Cutoff Current

VCB= -80V; IE= 0

-0.1

mA

IEBO

Emitter Cutoff Current

VEB= -4V; IC= 0

-0.1

mA

hFE-1

DC Current Gain

IC= -1A; VCE= -2V

70

hFE-2

DC Current Gain

IC= -10A; VCE= -2V

30

Current-GainBandwidth Product

IC= -1A; VCE= -2V

fT

CONDITIONS

MIN

TYP.

MAX

UNIT

280

20

MHz

hFE-1 Classifications
Q

70-140

100-200

140-280

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