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Coolmos Power Transistor: Features Product Summary
Coolmos Power Transistor: Features Product Summary
Product Summary
Features
V DS
600
0.118
R DS(on),max
ID
34
PG-TO247
Type
Package
Ordering Code
Marking
SPW35N60CFD
PG-TO247
Q67045A5053
35N60CFD
Symbol Conditions
ID
Value
T C=25 C
34.1
T C=100 C
21.6
85
I D,pulse
T C=25 C
E AS
I D=10 A, V DD=50 V
1300
E AR
I D=20 A, V DD=50 V
I AR
dv /dt
dv /dt
mJ
20
80
V/ns
40
V/ns
di /dt
I S=34.1 A, V DS=480 V,
T j=125 C
600
A/s
V GS
static
20
AC (f >1 Hz)
30
T C=25 C
313
Power dissipation
P tot
T j, T stg
Rev. 1.3
I D=34.1 A,
V DS=480 V, T j=125 C
Unit
page 1
2008-04-17
SPW35N60CFD
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
0.4
leaded
62
260
600
Thermal characteristics
Thermal resistance, junction - case
R thJC
R thJA
K/W
V (BR)DS
V GS=0 V, I D=34.1 A
700
V GS(th)
I DSS
V DS=600 V, V GS=0 V,
T j=25 C
V DS=600 V, V GS=0 V,
T j=150 C
3300
I GSS
V GS=20 V, V DS=0 V
100
nA
R DS(on)
V GS=10 V, I D=21.6 A,
T j=25 C
0.10
0.118
V GS=10 V, I D=21.6 A,
T j=150 C
0.23
Gate resistance
RG
0.6
Transconductance
g fs
21
Rev. 1.3
page 2
2008-04-17
SPW35N60CFD
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
5060
1400
52
162
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
C rss
C o(er)
C o(tr)
299
t d(on)
20
Rise time
tr
25
t d(off)
65
Fall time
tf
12
Q gs
36
Q gd
87
Qg
163
212
V plateau
7.2
V GS=0 V, V DS=25 V,
f =1 MHz
pF
V GS=0 V, V DS=0 V
to 480 V
V DD=400 V,
V GS=10 V, I D=34.1 A,
R G=3.3
ns
V DD=480 V,
I D=34.1 A,
V GS=0 to 10 V
1)
2)
3)
Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
4)
C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
5)
C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 1.3
page 3
nC
2008-04-17
SPW35N60CFD
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
34.1
85
1.0
1.2
180
ns
1.5
16
Reverse Diode
Diode continuous forward current
IS
I S,pulse
V SD
t rr
Q rr
I rrm
T C=25 C
V GS=0 V, I F=34.1 A,
T j=25 C
V R=480 V, I F=I S,
di F/dt =100 A/s
Value
Unit
Symbol
typ.
R th1
0.00441
R th2
Value
Unit
typ.
K/W
C th1
0.00037
0.00608
C th2
0.00223
R th3
0.0341
C th3
0.00315
R th4
0.0602
C th4
0.0179
R th5
0.0884
C th5
0.098
C th6
4.45)
Ws/K
5)
C th6 models the additional heat capacitance of the package in case of non-ideal cooling. It is not needed if
R thCA=0 K/W.
Rev. 1.3
page 4
2008-04-17
SPW35N60CFD
1 Power dissipation
P tot=f(T C)
400
102
limited by on-state
resistance
10 s
1 s
100 s
300
101
1 ms
10 ms
I D [A]
P tot [W]
DC
200
100
100
10-1
0
0
40
80
120
100
160
101
102
V DS [V]
T C [C]
parameter: V GS
100
90
20 V
Z thJC [K/W]
8V
60
0.2
I D [A]
0.1
0.05
10-2
10 V
75
0.5
10-1
103
7V
0.02
0.01
45
30
single pulse
6.5 V
15
6V
5.5 V
10
-3
10
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
15
20
V DS [V]
t p [s]
Rev. 1.3
5V
0
-6
page 5
2008-04-17
SPW35N60CFD
5 Typ. output characteristics
parameter: V GS
parameter: V GS
0.5
60
10 V
20 V
50
0.4
8V
40
R DS(on) []
I D [A]
7V
30
6.5 V
0.3
5.5 V
5V
6.5 V
6V
7V
20 V
0.2
20
6V
0.1
5.5 V
10
5V
0
0
10
15
20
10
20
V DS [V]
30
40
I D [A]
0.3
150
0.25
120
C 25
90
0.15
I D [A]
R DS(on) []
0.2
98 %
60
typ
C 150
0.1
30
0.05
0
-60
-20
20
60
100
140
180
T j [C]
Rev. 1.3
10
V GS [V]
page 6
2008-04-17
SPW35N60CFD
9 Typ. gate charge
I F=f(V SD)
parameter: V DD
parameter: T j
12
102
25 C, 98%
120 V
25 C
10
150 C, 98%
480 V
150 C
101
I F [A]
V GS [V]
100
10-1
50
100
150
200
0.5
1.5
140
180
V SD [V]
Q gate [nC]
11 Avalanche SOA
12 Avalanche energy
I AR=f(t AR)
parameter: T j(start)
1400
25
1200
20
1000
I AV [A]
E AS [mJ]
15
10
800
600
25 C
125 C
400
5
200
0
10-3
0
10-2
10-1
100
101
102
103
t AR [s]
Rev. 1.3
20
60
100
T j [C]
page 7
2008-04-17
SPW35N60CFD
14 Typ. capacitances
700
105
660
104
C [pF]
V BR(DSS) [V]
620
Ciss
103
Coss
102
580
Crss
101
540
-60
-20
20
60
100
140
180
100
200
T j [C]
300
400
500
125
150
V DS [V]
30
2.8
25
2.6
20
Q rr [C]
E oss [J]
2.4
15
2.2
2
10
1.8
5
1.6
1.4
0
100
200
300
400
500
600
V DS [V]
Rev. 1.3
25
50
75
100
T j [C]
page 8
2008-04-17
SPW35N60CFD
17 Typ. reverse recovery charge
parameter: T j
parameter: T j
2.5
125 C
125 C
Q rr [C]
Q rr [C]
1.5
25 C
25 C
1
2
0.5
0
0
10
15
20
25
30
35
I S [A]
Rev. 1.3
0
0
300
600
900
di/ dt [A/s]
page 9
2008-04-17
SPW35N60CFD
Definition of diode switching characteristics
Rev. 1.3
page 10
2008-04-17
SPW35N60CFD
PG-TO247-3-21-41
Rev. 1.3
page 11
2008-04-17
SPW35N60CFD
Rev. 1.3
page 12
2008-04-17