2SA1294

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3263)

ICBO

VCB=230V

100max

IEBO

VEB=5V

100max

IC=25mA

230min

V(BR)CEO

IC

15

hFE

VCE=4V, IC=5A

50min

IB

VCE(sat)

IC=5A, IB=0.5A

2.0max

PC

130(Tc=25C)

fT

VCE=12V, IE=2A

35typ

MHz

Tj

150

COB

VCB=10V, f=1MHz

500typ

pF

55 to +150

hFE Rank O(50 to 100), Y(70 to 140)

19.90.3

VEBO

VBB1
(V)

VBB2
(V)

IB1
(mA)

IB2
(mA)

ton
(s)

tstg
(s)

tf
(s)

60

12

10

500

500

0.35typ

1.50typ

0.30typ

I B =20mA

5A
0

Collector-Emitter Voltage V C E (V)

0.5

1.0

1.5

h FE I C Temperature Characteristics (Typical)

(V C E =4V)

200

200

0.5

25C

100

30C

50

10
0.02

5 10 15

Transient Thermal Resistance

DC C urrent G ain h FE

Typ

50

Collector Current I C (A)

0.1

0.5

10 15

0.5

0.1

10

he
at
si
nk

Collector Curr ent I C (A)

ite

Without Heatsink
Natural Cooling

fin

0.5

In

100

ith

DC

Ma ximum Po we r Dissipa ti on P C (W)

50

0.1
0
0.02

0.1

Emitter Current I E (A)

10

0.05
3

1000 2000

P c T a Derating

10

20

100
Time t(ms)

130
10

mp)

40

Ty

2.5

Safe Operating Area (Single Pulse)

60

j-a t Characteristics

(V C E =12V)

40

Collector Current I C (A)

f T I E Characteristics (Typical)

Cut-o ff F requ ency f T (MH Z )

DC C urrent G ain h FE

125C

0.1

Base-Emittor Voltage V B E (V)

(V C E =4V)

10
0.02

2.0

Base Current I B (A)

h FE I C Characteristics (Typical)

100

I C =10A

eTe

50mA

Cas

10

mp
)
emp
)

1 00 mA

(V C E =4V)

eTe

mA
200

15

Cas

0m

C (

30

10

1.4

I C V BE Temperature Characteristics (Typical)

125

mA

5.450.1
C

V CE ( sat ) I B Characteristics (Typical)

j- a ( C/W)

00

0.65 +0.2
-0.1

Weight : Approx 6.0g

a. Part No.
b. Lot No.

Collector Current I C (A)

A
5

Collector Current I C (A)

Collector-Emitter Saturation Voltage V C E (sa t) (V )

3
.0A
2
.0
A

.0
1

2
3

IC
(A)

5A

3.20.1

5.450.1

RL
()

.
1

2.00.1

1.05 +0.2
-0.1

VCC
(V)

15

4.80.2

Typical Switching Characteristics (Common Emitter)

I C V CE Characteristics (Typical)

seT

Tstg

15.60.4
9.6

1.8

5.00.2

Unit

(Ca

230

Ratings

C (

VCEO

Conditions

30

230

External Dimensions MT-100(TO3P)

(Ta=25C)

Symbol

2.0

VCBO

Electrical Characteristics

4.0

Unit

25C

Ratings

Symbol

4.0max

Absolute maximum ratings (Ta=25C)

Application : Audio and General Purpose

20.0min

LAPT

Without Heatsink
10

100

Collector-Emitter Voltage V C E (V)

300

3.5
0

25

50

75

100

125

150

Ambient Temperature Ta(C)

15