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Black Silicon: Microfabrication Techniques and Characterization For Solar Cells Applications
Black Silicon: Microfabrication Techniques and Characterization For Solar Cells Applications
org
doi:10.14355/ijes.2013.0306.04
BlackSilicon:MicrofabricationTechniques
andCharacterizationforSolarCells
Applications
A.Deraoui1,2,A.Balhamri3,4,M.Rattal1,Y.Bahou1,A.Tabyaoui1,M.Harmouchi1,Az.Mouhsen1andE.M.
Oualim1
UnivHassan1,LaboratoireRayonnementetMatire,26000Settat,Maroc
InstituteofCondensedMatterandNanosciencesNanophysics(IMCN/NAPS),UniversitCatholiquedeLouvain,
CheminduCyclotron2,B1348LouvainlaNeuve,Belgium
3UnivHassan1,EcoleSuprieuredeTechnologie,218Berrechid,Maroc
4ResearchInstituteforMaterialsandEngineering,ChimiedesInteractionsPlasmaSurface(ChIPIS),CIRMAP,
UniversitdeMons,PlaceduParc20,B7000,Belgium
1
2
a.deraoui@gmail.com,adil.balhamri@gmail.com,mourad.rattal@gmail.com,ylouch2000@gmail.com,
ylouch2000@gmail.com,mharmouchi@hotmail.com,az.mouhsen@gmail.com,oualim.elmostafa@gmail.com
Abstract
The properties of black silicon are well suited for use in
photovoltaicapplications.Weplantousetheadvantagesof
blacksilicontobuildnewtypesofsolarcellsthatwillbeable
to capture solar energy across a wider range, thereby
realizing greater efficiency in future photovoltaic cells (J.S.
Yoo2006)(K.Nishioka2009)(Y.M.Song2010)(Y.Xia2011).
The method of production has brought the use of black
silicon in photovoltaic arrays closer to commercial
realisation, as it will reduce the cost of black silicon
production, minimize reflectivity and maximize the
absorbance (B.S. Kim 2011) (H. Sai 2006) (H. Sai 2007) (K.
Tsujino 2006) (K. Nishioka 2008). The basicobjective of this
paper is to create black silicon by chemical wet etching
techniques using Au nano particles directly formed on
siliconsubstrates.Wefurtherdecidedtotrytooptimizethis
materialusingnonheavilyphotolithographicmethods,such
asetching.ThemorphologyofBlackSiwascharacterizedby
Scanning Electron Microscopy (SEM) and the optical
propertiesweregiventhankstoCarySpectrometer.
FIG.1SEMIMAGEOFAPYRAMIDTEXTUREDBLACKSILICON
SURFACE
Keywords
SolarCells;BlackSilicon;Photolithographic;Thinfilms
Introduction
Black silicon is a material that is chemically equal to
normalsilicon.Theonlydifferencebetweenthesetwo
isthesurfacetreatmentthatchangesthemorphology.
This special morphology has to represent a certain
roughnessofthesurfaceanditistypicallydoneby
creatingpyramidtextures(figure1)ortrencheswithin
the silicon. When these structures are in place, and
when they are small enough, incident light will be
FIG.2SCHEMATICREPRESENTATIONOFLIGHT
INTERACTIONWITHANORMALSILICONSURFACE(LEFT)
ANDABLACKSILICONSURFACE(RIGHT)
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www.ijesci.orgInternationalJournalofEnergyScience(IJES)Volume3Issue6,December2013
Thebasicobjectiveofthispaperistoexploitdifferent
techniques of micro fabrication to create black silicon
and then characterize it.; and further this material is
determined to be built using nonheavily
photolithographic methods, such as etching (J. Zhao
1998). In this paper the wet etching process was
developedtocreateblacksilicon.
Experimental Setup
Wetetchingmethodshavebeendevelopedtofabricate
highaspectratioholesinsilicon.Inthismethod,deep
straight holes or trenches can be produced by wet
chemical etching, which is suitable for mass
production, in solutions containing hydrofluoric acid
(HF). It is a simple and fast technique that creates
thesetexturesusingwetchemicalprocesses.
Thefollowingmechanismisproposed:
Cathodereaction(atmetal):
FIG.3BASICPROCESSFORCREATINGBLACKSILICON
SURFACEWITHGOLDNANOPARTICLES
2H+2eH2
(22)
Anodereaction(Si):
+
Si+4h++4HFSiF4+4H+(23)
SiF4+2HFH2SiF6(24)
Overallreaction:
Si+H2O2+6HF2H2O+H2SiF6+H2
(25)
Methodsusingthinmetalfilmsorparticlesloadedon
silicon wafersfor assisting wet chemical etching have
recently been developed. These methods utilize the
catalytic actions of metals for dissolution of silicon in
HFbased solutions. Since these methods do not need
electrochemical equipment, they seem to be suitable
formassproduction.Ithasbeenfoundthatcylindrical
holeswithdiametersoftensnanometerswereformed
insiliconinthe(100)directionbywetchemicaletching
in an aqueous solution containing HF and hydrogen
peroxide(H2O2)whengoldnanoparticleswereloaded
on the silicon surface before the etching process. As
the holes were generated,gold particles sankinto the
bulkofsilicon.
PolishedSi(100)waferswereusedinthefabricationof
blacksilicon.TheSisampleswerecleanedbystandard
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InternationalJournalofEnergyScience(IJES)Volume3Issue6,December2013
www.ijesci.org
FIG.5SEMIMAGESOFSAMPLESAFTERANNEALING1nmAu
LAYER(a),3nmAuLAYER(b)AND7nmAuLAYER(c)
FIG.6SEMCROSSSECTIONALAREAIMAGESOFSAMPLES
AFTERANNEALING1nmAuLAYER(a),3nmAuLAYER(b)
AND7nmAuLAYER(c)
TheaveragesizeoftheAumetalparticlesincreasesas
thethicknessofthemetallayerincreases.Forthethree
images shown in figure 5, the average size of the
grains is found to be 20, 40 nm and 120 nm
respectively. This increase in the particle size is
associatedwiththefluxofparticlesdiffusingwhenthe
temperatureishighenough.Whenthereisonly1nm
layerofAuatoms,therewillbelessnumberofatoms
makingtheparticlesthanthe7nmlayereventhough
theannealingtemperatureandtheannealingtimeare
keptthesame.
FIG.4SEMIMAGEOFSAMPLEAFTERANNEALING(a)AND
AFTERETCHING(b)
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Theabsorbanceofblacksiliconisgreaterthan85%,in
thewavelengthrangefrom250to1100nm,itreached
96%forthesampleofblackSiusing7nmAufilmand
theabsorbanceofuntreatedsiliconintheUVandNIR
was much lower than the black silicon one and the
absorbance bandwidth of black silicon was much
wider than the untreated silicon one. This is mainly
due to the microstructured surface of black silicon,
such as column and pores, giving rise to the multi
reflectionoftheincidentlightandincreasingthearea
of absorbing surface. The photon is reflected several
timesbythemicrocolumnandnanopores,whichwill
increase its absorbing probability. Due to no
introduction of impurity into the silicon, there is no
extraabsorbingenergylevelinthegapofblacksilicon.
Consequently, the photons with the energy below
band gap cannot be absorbed. Thus, the spectrum of
absorbance of the black silicon achieved by wet
etching is similar to the absorbing spectrum of the
common untreated silicon at the wavelength larger
than1100nm.
FIG.7NORMALINCIDENCESPECTRALREFLECTANCEFROM
BLACKSISURFACEETCHEDWITHVARIOUSAuFILM
THICKNESSES(1,3AND7nm)ANDFROMUNTREATED
SILICONSURFACE
Conclusions
Inthisstudy,experimentswereundertakeninorderto
determinetheoptimizedprocessusingvarioussizesof
Au nano particle. The Au nano particles were
fabricatedviathermalannealingofAuthinfilmswith
1, 3 and 7 nm thickness. It was found that the initial
Au film thickness can affect the particle size and
change the etching conditions and optimize optical
properties of the surface. The absorption was
significantly increased and the reflection decreased
drastically in the wavelength range from 250 to 1100
nm after the formation of the antireflection, and if
applied to a solar cell, it will greatly increase the
conversionefficiency.
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FIG.8NORMALINCIDENCESPECTRALABSORBANCEFROM
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AdilBALHAMRIwasborninMorocco
in1980.HereceivedhisPh.D.degreein
Physics in 2012 from the University of
Hassan 1er, Morocco. His scientific
interests include solar cells and
Renewable Energy, plasma diagnostics,
thin film growth during ionized PVD
processes in particular HPPMS. He is
the author of several lectures and
articles. After a Researcher as a PhD student at the
UniversityofMons,Belgium,hecurrentlyholdsaProfessor
position, at the High School of Technology, in particular at
the Department of Industrial Engineering and Renewable
Energy.
(2008):919922.
Y. Xia, B. Liu, J. Liu, Z. Shen, C. Li, Sol. Energy 85 (2011):
15741578.
www.ijesci.org
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