DATA SHEET

JUNCTION FIELD EFFECT TRANSISTOR

2SK1109
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM

DESCRIPTION

PACKAGE DRAWING (Unit: mm)

The 2SK1109 is suitable for converter of ECM.

0.8

FEATURES

1.8 MIN.

Compact package
High forward transfer admittance
1000 S TYP. (IDSS = 100 A)
1600 S TYP. (IDSS = 200 A)
Includes diode and high resistance at G - S

1. Source
2. Drain
3. Gate
2

1.5

5.5 0.4

1.8 MIN.

ORDERING INFORMATION
PART NUMBER

PACKAGE

2SK1109

SC-59 (MM)

3
2.9 0.2

1.1

ABSOLUTE MAXIMUM RATINGS (TA = 25C)

Drain to Source Voltage

Note

VDSX

20

VGDO

20

Drain Current

ID

10

mA

Gate Current

IG

10

mA

Total Power Dissipation

PT

80

mW

Junction Temperature

Tj

125

Storage Temperature

Tstg

55 to +125

Gate to Drain Voltage

EQUIVALENT CIRCUIT

Drain

Gate

Source

Note VGS = 1.0 V

Remark

Please take care of ESD (Electro Static Discharge) when you handle the device in this document.

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15940EJ1V0DS00 (1st edition)
Date Published January 2002 NS CP(K)
Printed in Japan

2002

2SK1109
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS

SYMBOL

Zero Gate Voltage Drain Cut-off Current

TEST CONDITIONS

IDSS

MIN.

VDS = 5.0 V, VGS = 0 V

TYP.

MAX.

UNIT

40

600

1.0

Gate Cut-off Voltage

VGS(off)

VDS = 5.0 V, ID = 1.0 A

0.1

Forward Transfer Admittance

| yfs1 |

VDS = 5.0 V, ID = 30 A, f = 1.0 kHz

350

Forward Transfer Admittance

| yfs2 |

VDS = 5.0 V, VGS = 0 V, f = 1.0 kHz

350

Input Capacitance

Ciss

VDS = 5.0 V, VGS = 0 V, f = 1.0 MHz

7.0

8.0

pF

Noise Voltage

NV

See Test Circuit

1.8

3.0

IDSS RANK
MARKING

J32

J33

J34

J35

J36

J37

40 to 70

60 to 110

90 to 180

150 to 300

200 to 450

300 to 600

IDSS
(A)

NOISE VOLTAGE TEST CIRCUIT

+4.5 V

R = 1 k

JIS A

NV (r.m.s)

C = 10 pF

Data Sheet D15940EJ1V0DS

2SK1109
TYPICAL CHARACTERISTICS (TA = 25C)

GATE TO SOURCE CURRENT vs.

GATE TO SOURCE VOLTAGE
40

DERATING FACTOR OF
POWER DISSIPATION

IG - Gate Current - A

dT - Derating Factor - %

30
100
80
60
40

20
10
1.0 0.8 0.6 0.4 0.2
10

30
40

20

40

60

80

100

120 140 160

VGS - Gate to Source Voltage - V

TA - Ambient Temperature - C

INPUT CAPACITANCE vs.

DRAIN TO SOURCE VOLTAGE

DRAIN CURRENT vs.

GATE TO SOURCE VOLTAGE

CiSS - Input Capacitance - pF

IDS IDSS =
S
= 2 30 0
=1
0
00 0 A A
A

0.8

0.6

0.4

IDS

ID - Drain Current - mA

100

VDS = 0 V
f = 1.0 MHz

VDS = 5 V

0.2

0.6

0.4

0.2

50
20
10
5

2
1
1

+0.2

10

20

50

100

VDS - Drain to Source Voltage - V

VGS - Gate to Source Voltage - V

VGS (off) - Gate to Source Cut-off Voltage - V

|yfs| - Forward Transfer Admittance - S

0.2 0.4 0.6 0.8 1.0

20

20

1.0

GATE TO SOURCE CUT-OFF VOLTAGE AND FORWARD

TRANSFER ADMITTANCE vs. ZERO-GATE VOLTAGE
DRAIN CURRENT CO-RELATION
10.0

VDS = 5 V

5.0
2.0

|yfs|

1.0
0.5
0.2

VGS (off)

0.1
0.05
0.02
0.01
10

20

50

100

200

500

1000

Zero-Gate Voltage Drain Current - A

Data Sheet D15940EJ1V0DS

2SK1109

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE
RANK: J32

ID - Drain Current - A

0.10 V
150
0.05 V

100

VGS = 0 V

50

0.15 V

0.05 V
0.10 V
0

0.10 V

300

0.05 V

ID - Drain Current - A

400

0.15 V

0.15 V

VGS = 0 V

200

0.05 V
100
0

10

0.10 V

0.15 V
6

VDS - Drain to Source Voltage - V

VDS - Drain to Source Voltage - V

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

RANK: J36

0.15 V

0.05 V

420

VGS = 0 V
280

0.05 V
0.10 V
0.15 V

140

10

RANK: J37

900

0.10 V

560

10

RANK: J35

0.15 V
0.10 V

720

0.05 V
540
VGS = 0 V
0.05 V

360

0.10 V
180
0.15 V

10

VDS - Drain to Source Voltage - V

0.10 V

0.10 V

ID - Drain Current - A

500

0.05 V

0.15 V

0.05 V
0.10 V

0.15 V

VGS = 0 V

700

VGS = 0 V

60

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

0.05 V

0.05 V

120

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

80

0.10 V
180

VDS - Drain to Source Voltage - V

240
160

240

10

0.15 V

VDS - Drain to Source Voltage - V

320

RANK: J34

400

RANK: J33

300

200

ID - Drain Current - A

0.15 V

ID - Drain Current - A

ID - Drain Current - A

250

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

VDS - Drain to Source Voltage - V

Data Sheet D15940EJ1V0DS

10

2SK1109
[MEMO]

Data Sheet D15940EJ1V0DS

2SK1109
[MEMO]

Data Sheet D15940EJ1V0DS

2SK1109
[MEMO]

Data Sheet D15940EJ1V0DS

2SK1109

The information in this document is current as of January, 2002. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
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and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
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(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4

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