N

Dual N-Channel Enhancement-Mode MOSFET

Dual N-Channel Enhancement-Mode MOSFET N

FHK9926

DESCRIPTION & FEATURES

SOT-26
Super High dense cell design for extremely low RDS(ON).

High power and current handing capability.

Power management
Optimized for use in battery protection circuits

PIN ASSIGNMENT
PIN NAME
FUNCTION
PIN NUMBER

SOT-26
1
S1
1
Source1
D1/D2
2
Drain
S2
3
Source2
G2
4
Gate2
D2/D1
5
Drain
1
G1
6
Gate1
MAXIMUM RATINGS(Ta=25)
CHARACTERISTIC
Symbol
Rating
Drain-Source Voltage
20
V DSS
Gate-Source Voltage -
V GSS
8
Drain CurrentContinuous -
6.0
ID
Peak Drain Current
35
IDM
THERMAL CHARACTERISTICS
CHARACTERISTIC
Symbol
Max
Total Device Dissipation FR-5 Board(1) TA=25
PD
225
Total Device Dissipation Alumina Substrate,(2) TA=25
PD
300

150
TJ ,
Junction and Storage Temperature
Tstg
-55 to +150
1. FR-5=1.00.750.062in, printed-circuit board.
2. Alumina=0.40.30.024in, 99.5%alumina
DEVICE MARKING
FHK9926=9926
ELECTRICAL CHARACTERISTICS
(TA=25 unless otherwise noted 25)
Symbol
Test Condition
Characteristic

Drain-Source Breakdown Voltage

V
(BR)DSS

Unit
Vdc
Vdc
Adc
Adc
Unit
mW
mW

Min
TYP
Max Unit

VGS=0V, ID =250A

20

Zero Gate Voltage Drain Current

IDSS

VDS=20V, VGS=0V

Gate-Body Leakage Current,Forward

IGSS

VGS=8V

100

nA

Gate Threshold Voltage

VGS(th)

VDS= VGS ,ID =250A

0.6

1.5

 N
Dual N-Channel Enhancement-Mode MOSFET

FHK9926

Dual N-Channel Enhancement-Mode MOSFET N

Static Drain-Source On-State Resistance

RDS(on)

VGS=4.5V, ID =6A
VGS=2.5V, ID =5.2A

26
35

30
40

Forward Transconductance

gfs

VDS=10V ,ID=6A

14

Diode Forward On-Voltage

VSD

VGS=0V, IS =1.7A

1.2

Drain-Source Diode Forward Current

IS

1.7

Turn-On Delay Time

td(on)

16

Turn-On Time

tr

17

Turn-Off Delay Time

td(off)

15

26

Turn-On Fall Time

tf

Input Capacitance

Ciss

650

pF

Output Capacitance

Coss

150

pF

Reverse Transfer Capacitance

Crss

85

pF

Total Gate Charge

QG

6.2

nC

Gate.to source charge

QGS

1.2

nC

Gate.to drain charge

QGD

1.7

nC

VDD = 10V, ID = 1A,

VGS = 4.5V, RGEN =6

VDS = 10V, VGS = 0V,

f = 1.0 MHz

VDD =10V, VGS = 4.5 V,

ID = 6 A

ns