VUO 52

IdAVM = 55 A
VRRM = 800-1800 V

Three Phase
Rectifier Bridge

1/2

VRSM
V

VRRM
V

Type

900
1300
1500
1700
1900

800
1200
1400
1600
1800

VUO 52-08NO1
VUO 52-12NO1
VUO 52-14NO1
VUO 52-16NO1
VUO 52-18NO1

Symbol

Test Conditions

IdAV
IdAV
IdAVM

TK = 90!C, module
TA = 45!C (RthKA = 0.5 K/W), module
module

IFSM

TVJ = 45!C;
VR = 0

12

4 5

10
8
6
4/5

10

Maximum Ratings

Features
Package with DCB ceramic base plate
Isolation voltage 3600 V~
Planar passivated chips
Blocking voltage up to 1800 V
Low forward voltage drop
Leads suitable for PC board soldering
!"#$%&'()%$%*#+,-.,/

54
43
55

A
A
A

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

350
375

A
A

TVJ = TVJM
VR = 0

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

305
325

A
A

TVJ = 45!C
VR = 0

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

615
590

A2s
A2s

TVJ = TVJM
VR = 0

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

465
445

A2s
A2s

-40...+130
130
-40...+125

!C
!C
!C

3000
3600

V~
V~

Applications
Supplies for DC power equipment
Input rectifiers for PWM inverter
Battery DC power supplies
Field supply for DC motors

TVJ
TVJM
Tstg

Advantages
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling

VISOL

50/60 Hz, RMS

IISOL " 1 mA

t = 1 min
t=1s

Md

Mounting torque

(M5)
(10-32UNF)

Weight

typ.

Symbol

Test Conditions

IR

VR = VRRM
VR = VRRM

TVJ = 25!C
TVJ = TVJM

"
"

0.3
5

mA
mA

VF

IF

TVJ = 25!C

"

1.46

VT0
rT

For power-loss calculations only

0.8
12.5

V
m#

RthJH

per diode, 120! rect.

per module, 120! rect.

1.5
0.25

K/W
K/W

dS
dA
a

Creeping distance on surface

Creepage distance in air
Max. allowable acceleration

12.7
9.4
50

mm
mm
m/s2

= 55 A;

2 - 2.5
18-22
35

Dimensions in mm (1 mm = 0.0394")

Characteristic Values

Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.

2000 IXYS All rights reserved

Nm
lb.in.
g

934

I2t

1-2

VUO 52

IF

60

300

IFSM A

50

250

50 Hz
0.8 x VRRM

A2s
2

It

TVJ = 25C
TVJ = 130C
40

1000

TVJ = 45C

TVJ = 45C

200
max.

30

150
TVJ = 130C

typ.
20

100

10

50

0
0.0

0.5

1.0

0
10-3

2.0 V 2.5
VF

1.5

Fig. 1 Forward current versus voltage

drop per diode

TVJ = 130C

100
10-2

10-1

100

10

ms

Fig. 2 Surge overload current per diode

IFSM: Crest value. t:duration

Fig. 3 I2t versus time (1-10 ms)

per diode
60

200
Ptot

RthKA K/W

IdAVM A

0.5
1
1.5
2
3
4
6

160

120

50

40

30
80
20
40

10

0
0

10

20

30

40

50 A 0
IdAVM

25

50

75

100 C 125

150

25

50

75

100

TA

Fig. 4 Power dissipation versus direct output current and ambient temperature

125 C 150
TK

Fig. 5 Maximum forward current at

heatsink temperature TK

1.6
ZthJK
ZthJK

K/W
1.2

Constants for ZthJK calculation:

0.8

i
0.4

0.0
10-3

VUO 52

10-2

10-1

100

101

1
2
3
4

Rth (K/W)

ti (s)

0.005
0.2
0.845
0.45

0.008
0.05
0.06
0.3

102
t

Fig. 6 Transient thermal impedance junction to heatsink per diode

2000 IXYS All rights reserved

2-2