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PD - 94648
IRFR3707Z
IRFU3707Z
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
30V
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
D-Pak
IRFR3707Z
Qg
9.6nC
I-Pak
IRFU3707Z
Max.
Units
30
VDS
Drain-to-Source Voltage
VGS
Gate-to-Source Voltage
20
ID @ TC = 25C
56
ID @ TC = 100C
39
IDM
220
PD @TC = 25C
50
PD @TC = 100C
25
f
f
0.33
TJ
-55 to + 175
TSTG
W/C
C
Thermal Resistance
Parameter
RJC
Junction-to-Case
RJA
RJA
Junction-to-Ambient
g
Typ.
Max.
Units
3.0
C/W
50
110
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1
04/03/03
IRFR/U3707Z
Static @ TJ = 25C (unless otherwise specified)
Parameter
Conditions
BVDSS
30
VDSS/TJ
0.023
RDS(on)
7.5
9.5
10
12.5
1.35
1.80
2.25
-5.0
mV/C
A
nA
VGS = 20V
VGS(th)
www.DataSheet4U.com VGS(th)/TJ
IDSS
IGSS
gfs
Qg
1.0
150
100
-100
Forward Transconductance
71
e
e
nC
VGS = 4.5V
9.6
14
Qgs1
2.6
Qgs2
0.90
Qgd
Gate-to-Drain Charge
3.5
ID = 12A
Qgodr
2.6
See Fig. 16
Qsw
4.4
VDS = 15V
Qoss
Output Charge
5.8
td(on)
8.0
tr
Rise Time
11
ID = 12A
td(off)
12
tf
Fall Time
3.3
Ciss
Input Capacitance
1150
Coss
Output Capacitance
260
Crss
120
nC
ns
pF
VDS = 15V
VGS = 0V
= 1.0MHz
Avalanche Characteristics
EAS
Parameter
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
c
Typ.
Units
mJ
Max.
42
12
5.0
mJ
Diode Characteristics
Parameter
IS
56
220
showing the
integral reverse
(Body Diode)
ISM
c
MOSFET symbol
A
(Body Diode)
VSD
1.0
trr
25
38
ns
Qrr
17
26
nC
ton
Conditions
G
S
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IRFR/U3707Z
10000
1000
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100
BOTTOM
TOP
TOP
1000
VGS
10V
6.0V
4.5V
4.0V
3.3V
2.8V
2.5V
2.2V
10
1
0.1
2.2V
0.01
100
BOTTOM
10
2.2V
1
0.001
0.1
0.1
10
0.1
10
1000
2.0
100
VGS
10V
6.0V
4.5V
4.0V
3.3V
2.8V
2.5V
2.2V
T J = 175C
10
T J = 25C
0.1
VDS = 10V
20s PULSE WIDTH
0.01
ID = 30A
VGS = 10V
1.5
1.0
0.5
0
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IRFR/U3707Z
10000
6.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
ID= 12A
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C, Capacitance(pF)
C oss = C ds + C gd
Ciss
1000
Coss
VDS= 24V
VDS= 15V
5.0
4.0
3.0
2.0
1.0
Crss
100
0.0
1
10
100
10
12
1000.00
1000
100.00
100
T J = 175C
10.00
1.00
T J = 25C
10
100sec
1msec
VGS = 0V
0.10
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
VSD, Source-to-Drain Voltage (V)
10msec
Tc = 25C
Tj = 175C
Single Pulse
0
10
100
1000
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IRFR/U3707Z
60
Limited By Package
50
ID, Drain Current (A)
2.5
40
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30
20
10
2.0
ID = 250A
1.5
1.0
0
25
50
75
100
125
150
175
25
50
T J , Temperature ( C )
10
D = 0.50
1
0.20
0.10
R1
R1
0.05
0.1
0.02
0.01
Ci= i/Ri
Ci= i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.01
J
1
R2
R2
R3
R3
3
Ri (C/W) i (sec)
0.823
0.000128
1.698
0.000845
0.481
0.016503
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
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IRFR/U3707Z
15V
+
V
- DD
IAS
VGS
20V
0.01
tp
D.U.T
RG
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DRIVER
VDS
200
ID
3.7A
5.6A
BOTTOM 12A
180
TOP
160
140
120
100
80
60
40
20
0
25
50
75
100
125
150
175
I AS
VDS
Current Regulator
Same Type as D.U.T.
VGS
Pulse Width < 1s
Duty Factor < 0.1%
50K
12V
.2F
.3F
+
V
- DS
VDS
90%
VGS
3mA
10%
IG
ID
VGS
td(on)
tr
td(off)
tf
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IRFR/U3707Z
D.U.T
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P.W.
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
P.W.
Period
RG
D=
VGS=10V
Period
VDD
+
-
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
ISD
Ripple 5%
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
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IRFR/U3707Z
Power MOSFET Selection for Non-Isolated DC/DC Converters
Synchronous FET
Control FET
Special attention has been given to the power losses
in the switching elements of the circuit - Q1 and Q2.
Power losses in the high side switch Q1, also called
the Control FET, are impacted by the Rds(on) of the
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MOSFET, but these conduction losses are only about
one half of the total losses.
+ (Qg Vg f )
Qgs 2
Qgd
+I
Vin f + I
Vin
ig
ig
+ (Qg Vg f )
+
Qoss
Vin f
2
For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since
it impacts three critical areas. Under light load the
MOSFET must still be turned on and off by the control IC so the gate drive losses become much more
significant. Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that
are transfered to Q1 and increase the dissipation in
that device. Thirdly, gate charge will impact the
MOSFETs susceptibility to Cdv/dt turn on.
The drain of Q2 is connected to the switching node
of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is
a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of Q2 and can induce
a voltage spike on the gate that is sufficient to turn
the MOSFET on, resulting in shoot-through current .
The ratio of Qgd/Qgs1 must be minimized to reduce the
potential for Cdv/dt turn on.
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IRFR/U3707Z
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
2.38 (.094)
2.19 (.086)
6.73 (.265)
6.35 (.250)
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1.14 (.045)
0.89 (.035)
-A1.27 (.050)
0.88 (.035)
5.46 (.215)
5.21 (.205)
0.58 (.023)
0.46 (.018)
4
6.45 (.245)
5.68 (.224)
6.22 (.245)
5.97 (.235)
1.02 (.040)
1.64 (.025)
10.42 (.410)
9.40 (.370)
LEAD ASSIGNMENTS
1 - GATE
3
0.51 (.020)
MIN.
-B1.52 (.060)
1.15 (.045)
3X
2X
1.14 (.045)
0.76 (.030)
0.89 (.035)
0.64 (.025)
0.25 (.010)
2 - DRAIN
3 - SOURCE
4 - DRAIN
0.58 (.023)
0.46 (.018)
M A M B
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2.28 (.090)
4.57 (.180)
Notes: T his part marking information applies to devices produced before 02/26/2001
EXAMPLE: T HIS IS AN IRFR120
WIT H AS S EMBLY
LOT CODE 9U1P
IRFU120
9U
016
1P
DAT E CODE
YEAR = 0
WEEK = 16
AS S EMBLY
LOT CODE
Notes : T his part marking information applies to devices produced after 02/26/2001
EXAMPLE: T HIS IS AN IRFR120
WIT H AS S EMBLY
LOT CODE 1234
AS S EMBLED ON WW 16, 1999
IN T HE AS S EMBLY LINE "A"
IRFU120
12
AS S EMBLY
LOT CODE
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PART NUMBER
916A
34
DAT E CODE
YEAR 9 = 1999
WEEK 16
LINE A
IRFR/U3707Z
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
6.73 (.265)
6.35 (.250)
2.38 (.094)
2.19 (.086)
-A-
0.58 (.023)
0.46 (.018)
1.27 (.050)
0.88 (.035)
5.46 (.215)
5.21 (.205)
LEAD ASSIGNMENTS
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1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
6.45 (.245)
5.68 (.224)
6.22 (.245)
5.97 (.235)
1.52 (.060)
1.15 (.045)
1
-B-
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2.28 (.090)
1.91 (.075)
3X
9.65 (.380)
8.89 (.350)
1.14 (.045)
0.76 (.030)
2.28 (.090)
3X
1.14 (.045)
0.89 (.035)
0.89 (.035)
0.64 (.025)
0.25 (.010)
M A M B
2X
0.58 (.023)
0.46 (.018)
INTERNATIONAL
RECT IFIER
LOGO
IRFU120
016
9U
1P
DAT E CODE
YEAR = 0
WEEK = 16
AS S EMBLY
LOT CODE
Notes : T his part marking information applies to devices produced after 02/26/2001
EXAMPLE: T HIS IS AN IRFR120
WIT H AS S EMBLY
LOT CODE 5678
AS S EMBLED ON WW 19, 1999
IN T HE AS S EMBLY LINE "A"
IRFU120
919A
56
AS S EMBLY
LOT CODE
10
PART NUMBER
78
DAT E CODE
YEAR 9 = 1999
WEEK 19
LINE A
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IRFR/U3707Z
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
TRL
16.3 ( .641 )
15.7 ( .619 )
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12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25C, L = 0.58mH, RG = 25,
IAS = 12A.
Pulse width 400s; duty cycle 2%.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 03/03
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11
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/