CHAPTER 1

INTRODUCTION OF INFINEON TECHNOLOGIES KULIM (IFKM)

1.1

Company Profile

Figure 1.1

Infineon Technologies Kulim Air View.

Companys Logo:

Figure 1.2
Address

Companys Logo

: Lot 10 & 11, Jalan Hi - Tech 7,

Industrial Zone Phase 2,
Kulim Hi Tech Park,
09000 Kulim, Kedah Darul Aman.
Malaysia.
1

Established : 27 January 2005

Industry
: Wafer Fabrication, Semiconductor
Products
: Main Applications are Automotive and Power Management and
Distribution
1.2

Company Overview
Infineon Technologies develops, manufactures and markets semiconductor
products and system solutions designed to help address the three principle
challenges facing modern society: energy efficiency, mobility, and security. The
Companys products find ready markets in the fields of automotive and industrial
electronics, computers, security and chip cards. Our technological expertise ensures
that Infineons innovative; high-quality products are both trend setting and
inspiring.
Infineon recorded revenue of 4 billion euro in 2011, meaning that the
Company has now successfully maintained its position at the very pinnacle of the
market for power semiconductors for eight years in row. According to IMS
Research, Infineons market share of 8.6 percent in the discrete power
semiconductor segment propelled the Company to the No.1 spot for the first time
ever in this highly competitive market as of August 2011.
Headquartered in Neubiberg near Munich, Germany, Infineon has global
workforce of approximately 26 000 spread across more than 40 research,
development and production sites all around the world as o September 30, 2011.
The companys innovative strength is evident both in European Innovation Fabs
and the fact that Infineon holds over 15 000 patents. Lower- cost production bases
in Asia help to keep Infineon competitive and strengthen the Companys presence
in future markets.

1.3

Company Background
The name of Infineon comes from a combination of two English words,
infinity and eon and the company motto is Never Stop Thinking. Infineon
Technologies has 16 manufacturing sites and 29 research and development sites in
2

Europe, Asia and United States. The Headquarter of Infineon Technologies, which
is in Munich, Germany decided to have two manufacturing plant in Malaysia, one
is in Malacca and another in Kulim. In semiconductor manufacturing, there are two
types of processes which are front-end and back-end of line. Infineon Technologies
Kulim (IFKM) is a front end process Wafer Company which is producing 8 inch
(200mm) wafer. Meanwhile, Infineon Technologies Malacca (IFMY) in back end
of line, involves in manufacturing processes such as packing, assemble, and final
testing facility. Figure 1.3 shows most of the overview of front end and back
end of Infineon Technologies worldwide.

Figure 1.3

Front end and Back end of Infineon Technologies Worldwide

Overview
Infineon Technologies focuses on three main areas: Energy Efficiency, Mobility
and Security. Infineons products stand out for their reliability, quality excellence,
innovative and leading edge technology in analogue, mixed signal, RF and power
as well as embedded control. It offers semiconductor solutions for automotive,
industrial electronics, chip card and security as well as applications in

communications. The product of IFKM is focused on AIM (Automotive, Industrial

and Multimarket chip card).

1.4

Vision, Mission and Infineon Technologies Identity

Figure 1.4 Infineon Technologies Logo and Meaning

1.4.1

Vision
To be the world wide best in class power semiconductor manufacturer for
automotive and industrial applications.

1.4.2

Mission
To provide outstanding manufacturing capabilities to meet the market and
business unit needs by permanently reducing cost and by providing high
level of innovation at zero defect quality.

1.4.3

4 Pillars
Custom Focus
Operational Excellence
Collaborative Leadership
Profitable Growth
4

1.5

Infineon Values

Four core values are the driving force behind our day-to-day execution:
We commit
We satisfy our customers needs
We walk the extra mile for our commitments
We offer the best price-performance value
We innovate
We learn and get better every day
We discover and develop new opportunities
We excel in outstanding engineering
We partner
We openly cooperate across boundaries
We respect and help each other
We team up for the best results
We perform
We embrace constructive conflict
We are accountable for our results
We actively capture our profit potential

1.6

Organizational Report
5

1.6.1

Company Organization Chart

1.6.2

Figure 1.6.1 Company Organization Chart

Organization Chart of Module 1

Figure 1.6.2 Organization Chart for Module 1

1.7

Objectives of Industrial Training

The objectives of the training are as follow:
1. To expose students to Engineering practice and professional attitude.
2. To encourage students to apply theory and practical knowledge.
3. To adopt students to working environment and teamwork.
7

4. To introduce students to potential employers.

5. To enhance the ability to improve students creativity skills and sharing ideas
with others.
1.8

Scope of work and tasks

During the Internship period under Infineon Technologies (Kulim) Sdn Bhd, I
was assigned to Module 1 Implant Maintenance. Followings are the job
responsibilities assigned to me during this Internship period.

Study and learn Ion Implantation process.

Study and learn Rebuilt process.

Projects

Trainees are scheduled to work five days a week, 8 hours per day. The working hour
is 8.00am to 5.15pm.

1.9

Classroom Training
Infineon Technologies offers people development program to employees
which enable Infineon to reinforce and further enhance its position as a key player
in the semiconductor industry. As an Intern in IFKM, I was treated as a fresh
engineer and thus I need to complete a series of training arranged as a guideline for
newcomer to quickly understand company business flow as well as job function.
Generally, the classroom training can be categorized in 2 different groups to cover
8

knowledge about business flow/protocol, technical training and data analysis. Table
1.9 shows the different group of classroom training that I had attended.

Business Flow/ Protocol

Cleanroom protocol training
Introduction to 5s
Non Conformance Handling
QMP process
Design Of Experiment
Basic Customs Knowledge Training
Introduction to QMS
Lot Disposition System and Handling

Data Analysis / Method

APC Basic & Trend
SPC Basic Course
Introduction to Pareto Analysis

Protocol
Table 1.9

Classroom Trainings

CHAPTER 2

INTRA PROJECTS AND MAIN ACTIVITIES

2.1

Introduction
9

During the 12 weeks internship training at Infineon Technologies (Kulim) Sdn Bhd,
I was assigned to do two projects. The projects require me to apply the theoretical
knowledge I gained at campus to be implemented into real life application. The projects
helped me to increase my knowledge on the theoretical values I learned. The details of the
projects are as in the table below.
Project Title

Related Course

Status

Benefits

Gas Bottle

EKT 426 Database

Completed

Gained

Withdrawal Request

Management System

knowledge on

on iShare

Database
Management

Remote Camera

EKT 336 Computer

Dropped due to lack

Gained

Monitoring System

Networks

of technical support.

knowledge on
Networking

Table 2.1 Project Details

2.2

Gas Bottle Withdrawal Request online systems

The purpose of this system is for the engineers or line technicians to request
for new gas bottle. Each tool uses different type of gas source, when the level of gas
is near empty, the technicians will have to request for a new gas bottle source to
replace the old source. This request will be sent to a group of people handling the
supply of gas bottle. The existing system requires the technicians to send the request
through e-mails. This method was not suitable for the analysis process as the data
need to be transferred to excel file manually.

10

Figure 2.2 Existing Request Systems.

A new idea has been suggested by my supervisor Mr Ong King Ang and my
mentor Mr Chong Kok Ee to reduce the complexity of the existing system. We had a
discussion and come up with a solution to overcome the problem. A project has been
assigned which requires me to create an online Gas Bottle Withdrawal Request system.
This system will be developed on Infineons iShare website. This system will reduce the
complexity of analyzing the gas bottle withdrawals.

2.2.1

Create a request form

1. Go to iShare webpage, on the upper- left side, click site actions and choose more
options.
11

Figure 2.2.1.1 iShare page

2. Choose Custom List on the pop up window appeared. Enter a name for the list.

Figure 2.2.1.2 Create List

12

3. Click Create Column to add a column to store additional information about

each item in the list.

Figure 2.2.1.3

Create Column

4. Type a name for this column, and select the type of information you want to
store in the column. Specify detailed options for the type of information you
selected. Tick Yes for Require that this column contains information to
make it compulsory to be filled-in.

Figure 2.2.1.4 Column Name

13

2.2.2

Create Gas Type and Contacts database

1. Follow the step 1 of the previous section, Create a request form

2. Choose Custom List on the pop up window appear on the side. Enter a name for
the list.

Figure 2.2.2.1 List Selection

3. Create three columns named Name, Mobile Phone and Speed Dial.
Choose Single line or text for the information type.

14

Figure 2.2.2.2 Contact Columns

4. Fill-in the details by either double clicking the details box in the datasheet view
or by clicking the Add New Item in the standard view.

Figure 2.2.2.3 Datasheet View

15

Figure 2.2.2.4 Standard View

5. Choose the view options under the list column to change the view between the
standard view and datasheet view.

Figure 2.2.2.5 View Options

2.2.3

Setting Alert

1. Click Items or List in the menu bar and choose alert me. Then, click Set
Alarm on this.
16

Figure 2.2.3.1 Set Alert

2. Enter the title for this alert. This is included in the subject of the notification sent
for this alert. You can enter user names or e-mail addresses. Separate them with
semicolons. Specify how you want the alerts delivered. Specify the type of
changes that you want to be alerted to. Specify whether to filter alerts based on
specific criteria. You may also restrict your alerts to only include items that
show in a particular view. Specify how frequently you want to be alerted.
(Mobile alert is only available for immediately send).

Figure 2.2.3.2 Alert Details

3. Enter username in the search box available to select the target group

17

2.2.4

Figure 2.2.3.3 Select Target Group

Adding New Request

1. Go to your browser and type

http://ishare2010.ap.infineon.com/sites/Implant_OCAP/GasBottle/SitePages/Ho
me.aspx
2. Click New Gas Bottle Request under the lists column.
3. To add fill new request, click the add item option.

18

Figure 2.2.4.1

Add new item

4. Fill in the form and save it.

Figure 2.2.4.2 New Request

19

2.2.5

Viewing Requests
1. Choose one of the request items and click View Item.

Figure 2.2.5.1 View Item

2. The details will be displayed.

Figure 2.2.5.2 Request Displayed

2.2.6

Viewing request details through E-mails received

20

1. Click View Gas Bottle Withdrawal Request.

Figure 2.2.6.1 E-mail

2. The link will direct to the IMPLANT iShare site displaying the request
details.

Figure 2.2.6.2 Request Details

2.2.7

Request Analysis

21

1. To do an analysis on the gas bottle change, the data on the online system need to
be transferred to excel file.
2. To export data, click Export to Excel

Figure 2.2.7.1

Export to Excel

3. The data will be exported to excel file as below.

Figure 2.2.7.2 Excel File

4. The data on the excel file can be updated by clicking Refresh All under the
Data menu.

22

Figure 2.2.7.3

Refresh Data

5. The number of gas bottle change can be analyzed by using the Excel functions.
A graph will be produced to analyze the data.

Figure 2.2.7.4
2.3

Sample Analysis

Remote Camera Monitoring Access

The purpose of this project is to monitor the tool operation from the
Engineers PC. Engineers will not have to enter the cleanroom to check whether the
tool is operating well or malfunction happens. The camera will be connected to
23

some points in the tool. All the cameras will be connected under the same server.
There are 33 implanter tools in the clean room which consist of 23 implanter tools
without camera and 10 implanters that come with camera. The primary objective
will be connecting the cameras available in the 10 implanters to the monitoring
system.

2.3.1

Basic Connections

Figure 2.3.1

Basic Connections

The implement the system, the following equipments will be needed:1. IP Camera
2. Digital Video Recorder
3. LAN Cables
24

4. Routers

2.3.2

DVR Viewer Setup

In this section, we will assign the surveillance DVR an IP address.
Make sure that the DVR is connected to network by attaching an
Ethernet cable to the back of DVR and attaching the other end of router.
1. Login to your DVR by pressing the menu button on the DVR or on

the wireless remote control.

2. When you are prompt to enter a password, just press the OK button

on the DVR or remote. The default admin password for the DVR is
blank. If you have already setup an admin password for your DVR,
then enter this, then press OK.
3. From your DVRs System menu, select External Device.
4. On the External Device menu, select TCP/IP Setup.
5. On the TCP/IP Setup screen, select DHCP setup and press enter.

Figure 2.3.2.1 TCP/IP Setup

25

6. On the DHCP setup screen, confirm that the DHCP mode is set to

automatic. If it is not, adjust it so that it is by pressing the OK

button.

Figure 2.3.2.2 DHCP Setup

7.

Select Detect IP and press enter. The screen should refresh and
populate values below. Note the IP address. This is the internal IP
address that your router has assigned to your DVR. This is the IP
address that you will setup port forwarding for.

8. After you have noted this IP address, select DHCP Mode and press

OK. The mode will be changed Manual. This will ensure that your
DVR will always be assigned the same IP address from your router.
This is important because if you lose power to your router, your
router may assign your DVR a difference IP address and you will no
longer be able to access the DVR remotely.
9. Press the menu button once to return to the TCP/IP setup screen.
10. On the TCP/IP setup screen, select IP config setup and press enter.

On the IP config setup screen, confirm the port number of your DVR
as seen below. The default port is 8000. If your DVR is not set to
26

port 8000, please edit this value to set to 8000. NOTE: please ignore
that the below screen shot shows port 50000. Port 50000 was used
for the last version of the JPEG DVR.

Figure 2.3.2.3

IP Configuration Setup

11. Press the Menu several times on your DVR or remote until you exit

out of the DVR menu system and see the live view of your cameras.

2.3.3

Setup Port Forwarding on your Router

Port forwarding needs to be setup on your router so that a computer

on the Internet can communicate remotely with your surveillance DV. Port
forwarding is a function of network routers that allows a user to configure
specific communication ports to be routed to devices on an IP (Internet
Protocol)

network,

such

as

computer,

DVR,

or IP

camera.

To configure port forwarding for a surveillance DVR, you will configure

your router to forward incoming Internet requests on the port that the DVR
27

uses to be routed / forwarded to the DVR. This enables you to access your
DVR remotely over the Internet. The below network diagram illustrates a
typical home or business network setup that includes a surveillance DVR.
The diagram would be the same for an IP camera. Simply replace the below
surveillance DVR in the diagram with an IP camera and all of the concepts
are exactly the same.

Figure 2.3.3

2.3.4

Port Forwarding

Port Forwarding Setup

1. Open your D-Link router's control panel by going to the IP

addresses http://192.168.0.1/ in a web browser. You will be prompt for a
password. If you did not setup a password on your router, the Dlink
default password is blank. Enter admin for the username and leave the
password blank.
2. After you are logged into your router, click on the "Advanced" tab, and
then click on the "Virtual Service" button. This will display the Virtual
Server screen as seen below:
28

Figure 2.3.4

Control Panel

3. On the Virtual Server screen:

a) Click on the "Enabled" radio button.
b) Choose a Name for this service. This can be anything that you
choose.
c) Enter the IP address of your DVR.
d) Select "Always" for Schedule.
e) Click on the "Apply" button.
4. On success, the screen will display a settings saved screen. The virtual
service, or port forwarding, to access your DVR is now setup.
2.3.5

Setup static DHCP IP Address

Although you previously setup the DVR to always request the same
IP address from your router when you set the DHCP setting to manual in the
DVR configuration, it is still a good idea to also configure your router to
always assign the same IP address to your DVR.

Dynamic Host

Configuration Protocol (DHCP) is a protocol used by routers such as Dlink

29

to distribute internal IP addresses to devices such as IP cameras, surveillance

DVRs, and computers that are connected to the network that they manage.
Normally, your Dlink router manages a pool of IP addresses, for example
from 192.0.168.100 to 192.0.168.199. When you connect surveillance DVR
to your Dlink router using an Ethernet cable, the router assigns the DVR the
next available IP address in the pool. Some routers support this feature and
some do not. If your does not, it is OK to skip this section. The reason to
set this up if you can is that if your router needs to be restarted or if there is a
power failure, there is risk that your DVR will be assigned a new IP address.
This will make the port forwarding setup that you just finished useless.
Follow these instructions to setup a static IP address for your DVR.
1. Open your D-Link router's control panel by going to the IP

address http://192.168.0.1/ in a web browser. You will be prompt for a

password. If you did not setup a password on your router, the Dlink
default password is blank. Enter admin for the username and leave the
password blank.
2. After you are logged into your router, click on the "Home" tab, then click
on the "DHCP" button. This will display the DHCP server screen as
seen below:

Figure 2.3.5.1 Control Panel

30

3. On the DHCP Server screen, use the screen shot below as a reference
and:
a) Locate the IP address of your DVR
b) Choose the MAC address of your DVR from the DHCP client
dropdown box and press the Clone button. This will populate the
MAC Address and DHCP Client fields.
c) Select the enabled radio button.
d) Choose a name for your DVR. This can be anything that you
choose and is only used by you to indentify your DVR on the
network while in the D-Link control panel.
e) Press the Apply button.

Figure 2.3.5.2

DHCP Screen Saver

4. After your router restarts and your screen refreshes, the static IP settings
you made will be saved in the Status DHCP Client List as seen below.

31

Figure 2.3.5.3 Client List

5. That IP address is now permanently reserved for your IP camera or
network DVR unless you remove that setting.

2.3.6

Setup Internet Connection to your DVR

The last step is to configure the Internet connection in the Integrated

Remote Station for access from outside of your local network. The steps
should follow as below:
1. If the IRS is not already running, please start it by double-clicking on the
JM-IRS icon on your desktop
2. One the main IRS screen, click on the IRS Setup button.
3. We will be adding a new entry for your remote Internet connection. So
when you are finished, if you also setup the LAN connection, you will
have two connections configured in the IRS setup. One for local access
to your DVR and one for remote Internet access.
a) On the IRS Setup screen, click on the Registering Site button. This
will open a new Window where you can add the settings to connect
32

to your DVR. This screen can be seen below.

Figure 2.3.6

IRS Setup

b) Select Manual for CONNECTION.

1. In the Address field, enter the static IP address that your ISP gave
you if you are using a static IP address. If you are using a dynamic
IP address and finished setting up your DynDNS account, please
enter the host name that you setup when registering.
2. Enter 8000 for PORT
3. Enter admin for USER ID
4. Leave the password blank if you did not setup a password on your
DVR or enter your DVR password if you did set one up.
c) Press OK when done.

33

4. You should now see an entry created for the Internet connection
information that you just entered in the Site Setup list on the IRS Setup
screen. Click on the Internet entry that you just created so that it is
highlighted in green then press OK.
5. On the main Integrated Remote Station screen click on the Transmitter
button. This will open the DVR transmitter which is that new DVR
viewer application. You can note that also in this list there is other
application. Although this application replaces the DVR Viewer, you can
see there is still a Viewer application available. This is so that older
legacy DVRs can still use the IRS application by using the DVR Viewer.
Remember for the dual codec DVRs you should use the Transmitter
because you will get better performance as it takes advantage of the
H.264 MPEG-4 video encoding built into it.
6. Once the transmitter application opens, the connection information that
you setup will be populated in the upper right. Click on the Connect
button. The transmitter should fairly quickly connect to your DVR and
display your security cameras.

CHAPTER 3

TRAINING DESCRIPTION

34

3.1

Introduction

As trainee at Implantation module, I was trained to get exposed to the theory

behind Ion Implantation and how the process is carried out in the production site of
Infineon Technologies (Kulim) Sdn Bhd. Besides that, I was trained as a maintenance
engineer at the Implant Rebuilt Room. The complete details of the Ion Implantation and
training as maintenance engineer will discussed in this section.

3.2

Ion Implantation Overview

Ion implantation is a material engineering process by which ions of a material can

be implanted into another solid, thereby changing the physical properties of the solid. Ion
implantation is used in semiconductor device fabrication and in metal finishing, as well as
various applications in materials science research. The ions introduce both a chemical
change in the target, in that they can be a different element than the target, and a structural
change, in that the crystal structure of the target can be damaged or even destroyed by the
energetic collision cascades.

3.2.1

General Principal of Ion Implantation

Ion implantation equipment typically consists of an ion source, where ions of the
desired element are produced, an accelerator, where the ions are electrostatic ally
accelerated to a high energy, and a target chamber, where the ions impinge on a target,
which is the material to be implanted. Thus ion implantation is a special case of particle
radiation. Each ion is typically a single atom or molecule, and thus the actual amount of
material implanted in the target is the integral over time of the ion current. This amount is
35

called the dose. The currents supplied by implanters are typically small (microamperes),
and thus the dose which can be implanted in a reasonable amount of time is small. Thus, ion
implantation finds application in cases where the amount of chemical change required is
small.
Typical ion energies are in the range of 10 to 500 keV (1,600 to 80,000 aJ). Energies
in the range 1 to 10 keV (160 to 1,600 aJ) can be used, but result in a penetration of only a
few nanometers or less. Energies lower than this result in very little damage to the target,
and fall under the designation ion beam deposition. Higher energies can also be used:
accelerators capable of 5 MeV (800,000 aJ) are common. However, there is often great
structural damage to the target, and because the depth distribution is broad, the net
composition change at any point in the target will be small.
The energy of the ions, as well as the ion species and the composition of the target
determine the depth of penetration of the ions in the solid: A mono energetic ion beam will
generally have a broad depth distribution. The average penetration depth is called the range
of the ions. Under typical circumstances ion ranges will be between 10 nanometers and 1
micrometer. Thus, ion implantation is especially useful in cases where the chemical or
structural change is desired to be near the surface of the target. Ions gradually lose their
energy as they travel through the solid, both from occasional collisions with target atoms
and from a mild drag from overlap of electron orbitals, which is a continuous process. The
loss of ion energy in the target is called stopping.

36

Figure 3.2.1 Ion Implantation Process

3.2.2

Types of Implanters

Implanters consist of High Current, Medium Current and High Energy. As the name
suggests, high-current implanters produce the highest beam currents, up to 25 mA. For
high-dose applications, the greater the beam current, the faster the implantation, which
means the more output of wafers per hour. Implanter makers have invested a great deal of
effort in maximizing beam current, especially at the lowest energies, where Childs law
limits the flux of ions extractable from a source. Although high-current implanters can
produce beams in the 10-A range, source instabilities make these beams unsuitable for
low-dose applications. The short beam line of these implanters allows an energy range from
<1 keV up to 100 to 200 keV.

37

Figure 3.2.2.1

Schematic of Implanters

Medium-current implanters are designed for maximum dose uniformity and

repeatability. Their beam currents are in the range of 1 A to 5 mA, at energies of 5 to ~600
keV. The wafer-processing end stations can implant ions at angles up to 60 from the
perpendicular to the wafer surface. This is essential for certain applications, such as antipunch through implants, for example, in which dopants must be implanted partially
underneath a previously formed gate structure. The lower operational cost of mediumcurrent implanters when used for lower-dose applications and their ability to do high-tilt
implants distinguish them from high-current implanters.
Last, only high-energy implanters can generate mega electron volt ion beams.
Commercial high-energy implanters produce beam currents for singly-charged ions up to
~1 mA. Energies for multiply-charged ions can be up to ~4,000 keV; with beam currents of
~50 A. High-energy implanters can produce beams down to 10 keV, making them suitable
for many medium-current applications as well. This additional functionality justifies the
capital cost of these machines. High-energy implanters using both RF linear acceleration
and dc acceleration are used widely today in semiconductor manufacturing

38

Figure 3.2.2.2

3.2.3

Difference between Implanters

Application in semiconductor device fabrication

The application of implantation includes doping. The introduction of dopants in a

semiconductor is the most common application of ion implantation. Dopant ions such as
boron, phosphorus or arsenic are generally created from a gas source, so that the purity of
the source can be very high. These gases tend to be very hazardous. When implanted in a
semiconductor, each dopant atom creates a charge carrier in the semiconductor (hole or
electron, depending on if it is a p-type or n-type dopant), thus modifying the conductivity of
the semiconductor in its vicinity.
One prominent method for preparing silicon on insulator (SOI) substrates from
conventional silicon substrates is the SIMOX (Separation by IMplantation of OXygen)
39

process, wherein a buried high dose oxygen implant is converted to silicon oxide by a high
temperature annealing process.
Mesotaxy is the term for the growth of a crystallographically matching phase
underneath the surface of the host crystal (compare to epitaxy, which is the growth of the
matching phase on the surface of a substrate). In this process, ions are implanted at a high
enough energy and dose into a material to create a layer of a second phase, and the
temperature is controlled so that the crystal structure of the target is not destroyed. The
crystal orientation of the layer can be engineered to match that of the target, even though
the exact crystal structure and lattice constant may be very different. For example, after the
implantation of nickel ions into a silicon wafer, a layer of nickel silicide can be grown in
which the crystal orientation of the silicide matches that of the silicon.

3.2.4

Problem in ion implantation

Crystallographic damage

Each individual ion produces many point defects in the target crystal on
impact such as vacancies and interstitials. Vacancies are crystal lattice points
unoccupied by an atom: in this case the ion collides with a target atom, resulting in
transfer of a significant amount of energy to the target atom such that it leaves its
crystal site. This target atom then itself becomes a projectile in the solid, and can
cause successive collision events. Interstitials result when such atoms (or the
original ion itself) come to rest in the solid, but find no vacant space in the lattice to
reside. These point defects can migrate and cluster with each other, resulting in
dislocation loops and other defects.

40

Damage recovery
Because ion implantation causes damage to the crystal structure of the target

which is often unwanted, ion implantation processing is often followed by a

thermal annealing. This can be referred to as damage recovery.

Amorphization
The amount of crystallographic damage can be enough to completely

amorphize the surface of the target: i.e. it can become an amorphous solid (such
a solid produced from a melt is called a glass). In some cases, complete
amorphization of a target is preferable to a highly defective crystal: An
amorphized film can be regrown at a lower temperature than required to anneal
a highly damaged crystal.

Sputtering
Some of the collision events result in atoms being ejected (sputtered) from

the surface, and thus ion implantation will slowly etch away a surface. The
effect is only appreciable for very large doses.

Ion channeling
If there is a crystallographic structure to the target, and especially in

semiconductor substrates where the crystal structure is more open, particular

crystallographic directions offer much lower stopping than other directions. The
result is that the range of an ion can be much longer if the ion travels exactly
along a particular direction, for example the <110> direction in silicon and other
diamond cubic materials. This effect is called ion channelling, and, like all the
channelling effects, is highly nonlinear, with small variations from perfect
orientation resulting in extreme differences in implantation depth. For this
reason, most implantation is carried out a few degrees off-axis, where tiny
41

alignment errors will have more predictable effects. There is no relation between
this effect and ion channel of a cell membrane.
Ion channeling can be used directly in Rutherford backscattering and related
techniques as an analytical method to determine the amount and depth profile of
damage in crystalline thin film materials.

3.2.5

Hazardous Materials Note

In the ion implantation semiconductor fabrication process of wafers, it is important

for the workers to minimize their exposure to the toxic materials used in the ion implanter
process. Such hazardous elements, solid source and gasses are used, such as Arsine and
Phosphine. For this reason, the semiconductor fabrication facilities are highly automated,
and may feature negative pressure gas bottles safe delivery system (SDS). Other elements
may include Antimony, Arsenic, Phosphorus, and Boron. Residue of these elements show
up when the machine is opened to atmosphere, and can also be accumulated and found
concentrated in the vacuum pumps hardware. It is important not to expose yourself to these
carcinogenic, corrosive, flammable, and toxic elements. Many overlapping safety protocols
must be used when handling these deadly compounds. Use safety, and read MSDS's.

3.2.6

High Voltage Safety:

High voltage power supplies in ion implantation equipment can pose a risk of
electrocution. In addition, high-energy atomic collisions can, in some cases, generate
radionuclides. Operators and Maintenance personnel should learn and follow the safety
advice of the manufacturer and/or the institution responsible for the equipment. Prior to
entry to high voltage area, terminal components must be grounded using a grounding stick.
Next, power supplies should be locked in the off state and tagged to prevent unauthorized
energizing.
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3.3

Rebuilt Team Training

As a maintenance engineer trainee, I was assigned at rebuilt team. The

responsible of this team is to regularly do Preventative Maintenance of the implant
tool and clean the parts of the implant tool. My training here was mostly to do the
rebuild of the various parts of the High Current implant tool. The process of the part
rebuilt will be discussed in this section.

3.3.1

Parts of High Current Tool.

The parts of the High Current tool consist of:1.

Ion Source

2.

Manipulator Electrode

3.

Analyzer Magnet

4.

Suppression Electrode

5.

Plasma Shower

6.

Disk Faraday

7.

Electronic Ray (EMER)

8.

Acceleration Tube

9.

Flag Faraday

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3.3.2

Flow Chart of Parts Cleaning

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45

3.3.3

Receiving Parts

After doing the tool Preventative Maintenance, the line technicians

will send the parts to the rebuilt room. The rebuilt room engineers and
technicians will store the parts inside the exhaust cabinet. All the incoming
dirty parts have to be stored in exhaust cabinet to prevent toxic particles
from flying around the rebuilt room. It is very important to keep the
environment as clean as possible. It is everyone responsibility to keep the
surrounding clean so that the people is also safe.

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Figure 3.3.3

3.3.4

Exhaust Cabinet

Dismantling Parts

The next step will be dismantling the parts. Parts from exhaust
cabinet will dismantled by the technicians. All the dirty parts have to be
dismantled at exhaust hoot location to prevent toxic exposure. It is important
to take note that toxic is a very dangerous substance as it will affect our
health. Keep all the loose parts in a standard allocated container to ensure the
parts can be found easily. The dismantled parts must be kept in according to
the material type to ease the cleaning process. The pars should be dismantled
carefully to ensure it is not broken.
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Figure 3.3.4.1 Ion Source before dismantling

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Figure 3.3.4.2 Ion Source after dismantled

3.3.5

Cleaning Parts

The parts cleaning include a few methods according to the type of the parts.
The methods are:1. Scotch brite.
2. Soak into H2O2
3. Clean with IPA chemical.

Scotch brite method is commonly used to clean Boron nitride. The part is cleaned
in specific cleaning station called Graphite Cleaning Station. This method is used as
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Boron Nitride should not contact with any liquid form. This cleaning method should be
done carefully to avoid the part to be broken. The dust produced form this cleaning method
will be blow dry using air pressure under the exhaust area. For Alumina ceramic parts, soak
into H2O2 for 12 hours, cleaned with diamond pad, blow dry and put in oven for 48 hrs at
70degC.Send nasty ceramic parts to Frontken for cleaning. For metal parts, either clean
with H202, water or IPA. Keep in oven for 12 hr at 70 degC.

Figure 3.3.5

3.3.6

Scotch Bite Method

Drying

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After cleaning the parts, leave the parts in oven overnight (12 hrs)
before rebuilt. Rule of thumb: Any parts should not have outgassing issue if
it is leave in the oven for 48 hours at 70 DegC.

Figure 3.3.6.1 Oven Settings

Figure 3.3.6.2 Parts placed in oven

3.3.7

Rebuild

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After drying the parts in oven for several hours, the parts can be
rebuilt now according to the reference drawing. Prior to rebuilt, please use
all the consumable parts that had been audited and is within the
specification. We have to look into detail on every single flaw that might
jeopardize the performance.

Figure 3.3.7

3.3.8

Checking (Audit)

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Rebuild Process

Audit by following through the relevant check sheet and write down
the information according to the check sheet requirement. Tag the check
sheet together with the assembly. Audit includes:

Mechanical alignment

Megger Test to check the isolation resistance

Multi meter - to check the continuity

Water Leak check check for any vacuum leak

Kestral - check for the source integrity

Figure 3.3.8.1 Water Leak Check Procedure

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Figure 3.3.8.2 Megger Test Procedure

3.3.9

Ready to use
After the audit, leave the assembly in oven at least 12 hrs @ 70 DegC
after rebuilt. Rule of thumb: Any parts should have no outgassing issue if it

54

is leave in the oven for 48 hours at 70 DegC. Now, the part is ready to be
fixed on the tool by the line technicians.

CHAPTER 4

DISCUSSION AND RECOMMENDATION

4.1

Discussion
During my industrial training at Infineon Technologies (Kulim) Ive
involved in project at implanter tool and support the implant maintenance. The
experience I gain in Infineon is really precious and I also learn a lot of new things.
During this Industrial training, I have many problems to do the tasks
assigned. I try to find problem and solve or debug. If the problems occur, I will
follow the procedures to solve. I will list the entire problem on the problem follow
up sheet and discuss with my supervisor and any engineer in my team. I get many
experiences to work in industry because I have many challenges during this training.
I also learn how to manage work and tasks. I get many experiences to work
in industry as a preparation for my future. I also get the communication skill and
55

how to work as a team. Besides that, I also know how to manage and finish my
work on time. This industrial training is very useful to each graduation student an
industry exposure.

4.2

Recommendation

In completion of the internship program with Infineon Technologies (Kulim)

Sdn Bhd, there are few recommendations to be suggested to improvise the
University and Companys service and performances.
I wish it would be better if UniMAP allow students to pursue their training
session to be extend about 6 months in order to learn more in the companies that
students choose to do training. For the host company, I would suggest that they
should have the confidence and sharing mentality as students taught to be given
chance to carry out duties and experiments to explore the highly sophisticated
equipments. By taking appropriate steps, industrial training can be upgraded and thus
provides worthwhile experience to students.

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CHAPTER 5

CONCLUSION

Throughout the industrial training period in Infineon Technologies (Kulim) Sdn Bhd, a lot
of experience and knowledge had been gauged. The industrial training no doubt will assist
me in preparing and exposing for the actual working life. This industrial training exposes
University Malaysia Perlis (UniMAP) students to the world of work so that they can relate
theoretical knowledge with real application in industry.The engineering students must not
only learn the theoretical knowledge but must also under-go practical work in term of
during the Industrial Training prior but students will also been develop skills in work ethics,
technical know-how, management also were expose them to the field environment so that
students were being exposed to Engineering practice and professional work style that they
were commonplace with the actual working environment that being come out to be the
potential employers. From the industrial training session were introduce students the
relationship between theory and real application and enable students to build and improve
creativity. This program was also to provide a channel for sharing and exchange of ideas
between the students and other staff of the industry. Furthermore, this program is also
crucial to establish close relationship between the Industry and University Malaysia Perlis
(UniMAP).I hope this training session will be a good guidance for me when I embark on a
57

new career in the coming future. Although the working environment in my future
undertakings is uncertain but I do glad that I have a good exposure on the medium scale
factory environment. Last but not least, I truly enjoyed and cherished my Industrial
Training.
REFERENCES
Internet source
Ion Implantation
[1]http://iweb.infineon.com/location/Kulim/enUS/OnD/PK/M1/M1_Implant/Pages/default.
aspx
Remote Camera Monitoring
[2] http://www.cctvcamerapros.com/DVR-Viewer-Connection-s/227.htm

Infineon Official Website

[3] http://iweb.infineon.com/location/Kulim/en-US/Pages/default.aspx

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