CEP02N6A/CEB02N6A

CEI02N6A/CEF02N6A
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type

VDSS

RDS(ON)

ID

@VGS

CEP02N6A

650V

7.5

1.5A

10V

CEB02N6A

650V

7.5

1.5A

10V

CEI02N6A

650V

7.5

1.5A

10V

CEF02N6A

650V

7.5

1.5A e

10V
D

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
G
D

S
CEB SERIES
TO-263(DD-PAK)

G
D
S

G
D
S
CEI SERIES
TO-262(I2-PAK)

D
CEP SERIES
TO-220

ABSOLUTE MAXIMUM RATINGS

Parameter

S
CEF SERIES
TO-220F

Tc = 25 C unless otherwise noted

Limit
Symbol
TO-220/263/262

Drain-Source Voltage

VDS

650

Gate-Source Voltage

VGS

30

Drain Current-Continuous
Drain Current-Pulsed

ID
IDM

Maximum Power Dissipation @ TC = 25 C

Units
V
V

1.5

4.5

4.5

42

28

1.5
f

PD

- Derate above 25 C

TO-220F

A
A

0.33

0.22

W/ C

Single Pulsed Avalanche Energy d

EAS

90

90

mJ

Single Pulsed Avalanche Current d

IAS

1.4

1.4

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

Symbol

Limit

Units

Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case

RJC

4.5

C/W

Thermal Resistance, Junction-to-Ambient

RJA

62.5

65

C/W

2003.December

http://www.cetsemi.com
4-6

CEP02N6A/CEB02N6A
CEI02N6A/CEF02N6A
Electrical Characteristics
Parameter

Tc = 25 C unless otherwise noted

Symbol

Test Condition

Min

Drain-Source Breakdown Voltage

BVDSS

VGS = 0V, ID = 250A

650

Zero Gate Voltage Drain Current

IDSS

Gate Body Leakage Current, Forward

Gate Body Leakage Current, Reverse

Typ

Max

Units

VDS = 600V, VGS = 0V

25

IGSSF

VGS = 30V, VDS = 0V

100

nA

IGSSR

VGS = -30V, VDS = 0V

-100

nA

7.5

Off Characteristics
V

On Characteristics b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics

VGS(th)

VGS = VDS, ID = 250A

RDS(on)

VGS = 10V, ID = 0.8A

5.8

gFS

VDS = 50V, ID = 0.8A

0.8

176

pF

48

pF

21

pF

Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

VDS = 25V, VGS = 0V,

f = 1.0 MHz

Switching Characteristics c
Turn-On Delay Time

td(on)

Turn-On Rise Time

tr

Turn-Off Delay Time

td(off)

VDD = 300V, ID = 1A,

VGS = 10V, RGEN = 18

11

27

ns

16

40

ns

28

35

ns

Turn-Off Fall Time

tf

16

40

ns

Total Gate Charge

Qg

15

21

nC

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

VDS = 480V, ID = 1A,

VGS = 10V

2.4

nC

8.7

nC

Drain-Source Diode Characteristics and Maximun Ratings

IS g

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage

VSD

VGS = 0V, IS = 0.8A

Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300s, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.L =60mH, IAS =1.4A, VDD = 50V, RG = 25, Starting TJ = 25 C .
e.Limited only by maximum temperature allowed .
f .Pulse width limited by safe operating area .
g.Full package IS(max) = 1.2A .

4-7

1.5

1.5

CEP02N6A/CEB02N6A
CEI02N6A/CEF02N6A
1.8

ID, Drain Current (A)

ID, Drain Current (A)

VGS=10,9,8,7V
1.5

VGS=6V

1.2
0.9
0.6

VGS=5V

TJ=150 C
10

-55 C

0.3
0.0

10
0

10

10

Figure 2. Transfer Characteristics

RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)

C, Capacitance (pF)

Figure 1. Output Characteristics

200
150
100

Coss
50

Crss

0
0

10

15

20

25

3.0
2.5

ID=0.8A
VGS=10V

2.0
1.5
1.0
0.5
0.0
-100

-50

50

100

150

200

VDS, Drain-to-Source Voltage (V)

TJ, Junction Temperature( C)

Figure 3. Capacitance

Figure 4. On-Resistance Variation

with Temperature

VDS=VGS

IS, Source-drain current (A)

VTH, Normalized
Gate-Source Threshold Voltage

VGS, Gate-to-Source Voltage (V)

Ciss

ID=250A

1.1
1.0
0.9
0.8
0.7
0.6
-50

VDS, Drain-to-Source Voltage (V)

250

1.2

-1

12

300

1.3

1.VDS=40V
2.Pulse Test

25 C

VGS=4V

10

10

10
-25

25

50

75

100

125

VGS=0V

-1

-2

0.4

150

0.6

0.8

1.0

1.2

TJ, Junction Temperature( C)

VSD, Body Diode Forward Voltage (V)

Figure 5. Gate Threshold Variation

with Temperature

Figure 6. Body Diode Forward Voltage

Variation with Source Current

4-8

15

10

VDS=480V
ID=1A

12

ID, Drain Current (A)

VGS, Gate to Source Voltage (V)

CEP02N6A/CEB02N6A
CEI02N6A/CEF02N6A
9

0
0

10

15

10

10ms
DC

10

-1

TC=25 C
TJ=150 C
Single Pulse

-2

10

10

10

10

Qg, Total Gate Charge (nC)

VDS, Drain-Source Voltage (V)

Figure 7. Gate Charge

Figure 8. Maximum Safe

Operating Area

VDD
t on
RL

V IN
D

td(off)

tf
90%

90%

VOUT
VOUT

RGEN

toff
tr

td(on)

VGS

10%

INVERTED

10%

G
90%

VIN

50%

50%

10%

PULSE WIDTH

Figure 10. Switching Waveforms

r(t),Normalized Effective
Transient Thermal Impedance

Figure 9. Switching Test Circuit

10

D=0.5

0.2

10

-1

0.1

PDM

0.05

t1
t2

0.02
0.01

10

10

1. RJC (t)=r (t) * RJC

2. RJC=See Datasheet
3. TJM-TC= P* RJC (t)
4. Duty Cycle, D=t1/t2

Single Pulse

-2
-5

10

-4

10

-3

10

-2

10

-1

Square Wave Pulse Duration (sec)

Figure 11. Normalized Thermal Transient Impedance Curve

4-9

100s
1ms

RDS(ON)Limit

10

20

10

10