Channel length modulation occurs when the depletion layer width at the drain increases with drain voltage, leading to a shorter effective channel length and higher drain current. Mobility variation refers to the ratio of carrier drift velocity to electric field intensity. Drain punchthrough happens when the drain depletion region merges with the source region at high drain voltages, allowing current to flow irrespective of gate voltage. Impact ionization occurs when gate lengths are reduced enough that hot electrons generated through impact gain enough energy to dislodge holes in the drain, appearing as substrate current.
Channel length modulation occurs when the depletion layer width at the drain increases with drain voltage, leading to a shorter effective channel length and higher drain current. Mobility variation refers to the ratio of carrier drift velocity to electric field intensity. Drain punchthrough happens when the drain depletion region merges with the source region at high drain voltages, allowing current to flow irrespective of gate voltage. Impact ionization occurs when gate lengths are reduced enough that hot electrons generated through impact gain enough energy to dislodge holes in the drain, appearing as substrate current.
Channel length modulation occurs when the depletion layer width at the drain increases with drain voltage, leading to a shorter effective channel length and higher drain current. Mobility variation refers to the ratio of carrier drift velocity to electric field intensity. Drain punchthrough happens when the drain depletion region merges with the source region at high drain voltages, allowing current to flow irrespective of gate voltage. Impact ionization occurs when gate lengths are reduced enough that hot electrons generated through impact gain enough energy to dislodge holes in the drain, appearing as substrate current.
The cutoff region described by I ds = 0, V gs < v J is also referred to as the subthreshold
-t-on, where I ds = 0 increases exponentially with Vd S and V gs . 31. What is channel length modulation? The increase of the depletion layer width at the drain as the drain voltage is increased. leads to a shorter channel length and an increased drain current is called Channel length modulation in a MOS.
39. What is mobility variation?
The mobility II, is defined as the ratio of average carrier drift velocity (V) to the electric . 1c1 intensity (E)
Average carrier drift velocity (V) cm3
/V-sec
Electric filed intensity (E)
-u). What is drain punchthrough?
When the drain is at a high enough voltage with respect to the source, the depletion around the drain and source regions merge into a single depletion region thus causing to flow irrespective of the gate voltages. This is known as a punchthrough effect. 41. What is Impact Ionization? When the length of the gate is reduced, the electric field at the drain of a transistor in saturation increases. For submicron gate lengths, the field can become so high that electron is imparted with enough energy to become "hot". The hot electrons impact the drain, dislodging boles that are swept towards the negatively charged substrate and appear as a substrate current. This effect is known as impact ionization.
.2. Draw the CMOS inverter DC transfer and operating region?