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bc184 PDF
bc184 PDF
bc184 PDF
TO-92
Units
VCEO
Symbol
Collector-Emitter Voltage
Parameter
30
VCBO
Collector-Base Voltage
45
VEBO
Emitter-Base Voltage
IC
100
mA
TJ, TSTG
-55 ~ +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Max.
Units
PD
Symbol
Total Device Dissipation
Derate above 25C
Parameter
350
2.8
mW
mW/C
RJC
125
C/W
RJA
357
C/W
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September 2007
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BVCBO
Collector-Base Voltage
IC = 10A
45
BVCEO
Collector-Emitter Voltage
IC = 2mA
30
BVEBO
Emitter-Base Voltage
IE = 10A
IEBO
VEB = 4V
ICBO
VCB = 30V
hFE
DC Current Gain
VCE(sat)
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5mA
VBE(sat)
IC = 100mA, IB = 5mA
VBE(on)
Base-Emitter On Voltage
Cob
Output Capacitance
fT
V
15
nA
15
nA
0.25
0.6
1.2
100
130
0.55
150
0.7
pF
MHz
Notes:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3. These ratings are based on a maximum junction temperature of 150degrees C.
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PRODUCTS.
2.
Product Status
Definition
Advance Information
Formative or In Design
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I30
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