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BD135

BD137/BD139
NPN SILICON TRANSISTOR


SGS-THOMSON PREFERRED SALESTYPES

DESCRIPTION
The BD135, BD137 and BD139 are silicon
epitaxial planar NPN transistors in Jedec SOT-32
plastic package, designed for audio amplifiers
and drivers utilizing complementary or quasi
compementary circuits.
The complementary PNP types are the BD136
BD138 and BD140.

SOT-32

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS


Symb ol

Parameter

Valu e
BD135

BD137

Unit
BD139

V CBO

Collector-Base Voltage (I E = 0)

45

60

80

V CEO

Collector-Emitter Voltage (IB = 0)

45

60

80

V EBO

Emitter-Base Voltage (IC = 0)

IC
I CM
IB

Collector Current
Collector Peak Current
Base Current
o

P tot

T otal Dissipation at Tc 25 C

P tot

T otal Dissipation at Tamb 25 C

T s tg
Tj

Storage T emperature
Max. Operating Junction T emperature

October 1995

1.5

0.5

12.5

1.25

-65 to 150

150

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BD135/BD137/BD139
THERMAL DATA
R thj -ca se

Thermal Resistance Junction-case

Max

10

C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)


Symbo l

Parameter

T est Con ditio ns

I CBO

Collector Cut-off
Current (I E = 0)

V CB = 30 V
V CB = 30 V

I EBO

Emitter Cut- off Current


(I C = 0)

V EB = 5 V

V CEO(sus) Collector-Emitter
Sustaining Voltage

V CE(sat)

TC = 125 o C

I C = 30 mA
for BD135
for BD137
for BD139

T yp.

Max.

Unit

0.1
10

A
A

10

45
60
80
IB = 0.05 A

V
V
V

Collector-Emitter
Saturation Voltage

I C = 0.5 A

V BE

Base-Emitter Voltage

I C = 0.5 A

VCE = 2 V

h FE

DC Current Gain

I C = 5 mA
I C = 0.5 A
I C = 150 mA

V CE = 2 V
VCE = 2 V
VCE = 2 V

25
25
40

250

h FE

h FE Groups

I C = 150 mA
V CE = 2 V
for BD139 group 10

63

160

Pulsed: Pulse duration = 300 s, duty cycle 1.5 %

2/4

Min .

0.5

BD135/BD137/B139

SOT-32 MECHANICAL DATA


mm

DIM.
MIN.

TYP.

inch
MAX.

MIN.

TYP.

MAX.

7.4

7.8

0.291

0.307

10.5

10.8

0.413

0.445

0.7

0.9

0.028

0.035

b1

0.49

0.75

0.019

0.030

2.4

2.7

0.04

0.106

c1

1.2

0.047

15.7

0.618

2.2

0.087

e3

4.4

0.173

3.8

0.150

G
H

3.2
2.54

0.118

0.126
0.100

0016114

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BD135/BD137/BD139

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1995 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
.

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