2N6504 Series

PreferredDevice

Silicon Controlled Rectifiers

ReverseBlockingThyristors

Designedprimarilyforhalfw
aveaccontrolapplications,suchasmotorcontrols,heatingcontrolsand
powersupplycrowbarcircuits.

Features

GlassPassivatedJunctionswithCenterGateFireforGreaterParameterUniformityandStability
Small,Rugged,ThermowattConstructedforLowThermalResistance,HighHeatDissipationand
Durability

BlockingVoltageto800Volts
300ASurgeCurrentCapability

http://onsemi.com

SCRs
25AMPERESRMS
50thru800VOLTS

PbFreePackagesareAvailable*

MAR
KING
DIAG
RAM

T
O

2
2
0
A
B
C
A
S
E
2
2
1
A
S
T
Y
L
E
3

1
2
3

=4,5,7,8or9
A
=
Assembly
Location
Y
=
Year
WW=WorkWeek
G =PbFreeDevice

PINASSIGNMENT
1

Cathode

Anode

Gate

Anode

ORDERINGINFORMATION
Seedetailedorderingandshipping
informationinthepackagedimensions
sectiononpage6ofthisdatasheet.

Preferreddevicesarerecommended
choicesforfutureuseandbestoverallvalue.

*For additional information on our PbFree strategy and

soldering details, please download the ON Semiconductor
Soldering and Mounting Techniques Reference Manual,
SOLDERRM/D.

SemiconductorComponentsIndustries,LLC,2008

April,2006Rev.8

PublicationOrderNumber:

2N6504/D

MAXIMUMRATINGS(TJ=25C
unlessotherwisenoted)
Rating

Symbol

*PeakRepetitiveOffStateVoltage(Note1)
(GateOpen,SineWave50to60Hz,TJ=25to125C
)
2N6504
2N6505
2N6507
2N6508
2N6509

Value

Unit

VDRM,
VRRM

50
100
400
600
800

OnS
tateCurrentRMS(180 ConductionAnglesTC=85C)

25

IT(AV)

16

ITSM

250

PGM

20

PG(AV)

0.5

ForwardPeakGateCurrent(PulseWidth1.0s,TC=85C)

IGM

2.0

OperatingJunctionTemperatureRange

TJ

40to+125

Tstg

40to+150

AverageOnS
tateCurrent(180 ConductionAnglesTC=85C
)
PeakNonr epetitiveSurgeCurrent(1/2Cycle,SineWave60Hz,TJ=100C
)
ForwardPeakGatePower(PulseWidth1.0s,TC=85C
)

IT(RMS)

ForwardAverageGatePower(t=8.3ms,TC=85C
)

StorageTemperatureRange

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional
operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the
RecommendedOperatingConditionsmayaffectdevicereliability.
1. VDRM and VRRM forall typescanbeapplied on acontinuousbasis. Ratingsapplyfor zero ornegativegatevoltage
however,positive gatevoltage shall notbeapplied concurrentwithnegativepotential ontheanode. Blockingvoltages
shallnotbetestedwithaconstantcurrentsourcesuchthatthevoltageratingsofthedevicesareexceeded.

THERMALCHARACTERISTICS

Characteristi
c
*ThermalResistance,JunctiontoCase
*MaximumLeadTemperatureforSolderingPurposes1/8infromCasefor10Seconds

Symbol

Max

Unit

R8JC

1.5

C/W

TL

260

ELECTRICALCHARACTERISTICS(TC=25Cunlessotherwisenoted.)
Characteristi
c

Symbol

Min

Typ

Max

Unit

OFFCHARACTERISTICS

*PeakRepetitiveForwardorReverseBlockingCurrent
TJ=25C

(VAK=RatedVDRMorVRRM,GateOpen)
TJ=125C

IDRM,
IRRM

10
2.0

A
mA

ONCHARACTERISTICS

*ForwardOnStateVoltage(Note2)(ITM=50A)

VTM

1.8

IGT

9.0

30
75

mA

*GateTriggerVoltage(Continuousdc)(VAK=12Vdc,RL=100Q,TC=40C
)

VGT

1.0

1.5

GateNonT
riggerVoltage(VAK=12Vdc,RL=100Q,TJ=125C)

VGD

0.2

IH

18

40
80

mA

tgt

1.5

2.0

*GateTriggerCurrent(Continuousdc)
(VAK=12Vdc,RL=100Q)

TC=25C

TC=40C

*HoldingCurrent
TC=25C

(VAK=12Vdc,InitiatingCurrent=200mA,GateOpen)TC=40C

*TurnO
nTime(ITM=25A,IGT=50mAdc)
TurnO
ffTime(VDRM=ratedvoltage)
(ITM=25A,IR=25A)

tq

15

(ITM=25A,IR=25A,TJ=125C
)

35

50

DYNAMICCHARACTERISTICS

CriticalRateofRiseofOffS
tateVoltage(GateOpen,RatedVDRM,Exponential
Waveform)
*IndicatesJEDECRegisteredData.
2. PulseTest:PulseWidth300s,DutyCycle2%.

dv/dt

VoltageCurrentCharacteristicofSCR
+Current

V/s

Anode+

Symbol

Parameter

VDRM

PeakRepetitiveOffStateForwardVoltage

IDRM

PeakForwardBlockingCurrent

VRRM

PeakRepetitiveOffStateReverseVoltage

IRRM

PeakReverseBlockingCurrent

VTM

PeakOnStateVoltage

IH

HoldingCurrent
VTM

IRRMatVRRM

onstate
IH

ReverseBlockingRegion(offstate)

ReverseAvalancheRegionAnode

+VoltageIDRMatVDRM
ForwardBlockingRegion(offstate)

13
0
12
0

110

10
0

90

32

24

16

8.0

80
0

4.0

8.0

12

16

20

0
0

4.0

8.0

12

16

20
IT(AV),ONS
TATEFORWARDCURRENT(AMPS)

IT(AV),AVERAGEONS
TATEFORWARDCURRENT(AMPS)

Figure1.AverageCurrentDerating
Dissipation

Figure2.MaximumOnStatePower

100

70
50

30
20

125C

25C

10
7.0
5.0
3.0

2.0

300

275

1.0

0.7
0.5

250

0.3

0.2

225

200

0.1

0.4

0.8

1.2

1.6

2.0

2.4

2.8

175

1.0

2.0

3.0

4.0

6.0

8.0

10

vF,INSTANTANEOUSVOLTAGE(VOLTS)

NUMBEROFCYCLES

Figure3.TypicalOnStateCharacteristics
SurgeCurrent

Figure4.MaximumNonRepetitive

1.0
0.7
0.5
0.3

0.2
0.1
0.07
0.05
0.03
0.02

0.01

0.1

0.20.3

0.5

1.0

2.0

3.0

5.0

10

2030

50

100

200300500

1.1k

2.0k3.0k5.0k 10k