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EC-1 (2mark& 16 Mark)
EC-1 (2mark& 16 Mark)
Unit-1
Biasing of discrete BJT and MOSFET
1. What is an amplifier?
An amplifier is a device which produces a large electrical output of similar characteristics
to that of the input parameters.
2. What are transistors?
Transistor is three terminal devices that can function as electronic switches or as signal
amplifiers. They are current operated devices with high input impedance and low output
impedance. Since it transfers current from a high to a low resistance region, it was named
bipolar.
3. What is Biasing? And need for biasing.[NOV/DEC-08,11],[MAY/JUN-09,13]
In order to operate transistor in the desired region we have to apply external dc voltages
of correct polarity and magnitude at the two junctions of the transistor.
e) Emitter diode should be forward bias and collector diode should be reverse biased.
Stability factor is defined as the rate of change of collector current with respect to the rate
of change of reverse saturation current.
11. What are the basic relationships of BJT transistor?
S'
VBE
VBE
s=
Ic Ic
S 1
= current gain of the transistor
21. What do you meant by thermal runway?[NOV/DEC-06]
Due to the self heating at the collector junction, the collector current rises. This causes
damage to the device. This phenomenon is called thermal runway.
25. Why the input impedance of FET is more than that of a BJT?
The input impedance of FET as more than that of BJT because the input circuit of FET is
reversed biased where as the input circuit BJT is forward biased.
26. What are the methods of bias compensation technique?
1. Diode compensation due to Ico, , &VBE
2. Thermistor compensation
3. Sensistor compensation
27. What is meant by compensation techniques? [NOV/DEC-11]
Compensation techniques use temperature sensitive devices such as diodes,
transitors, thermistors, etc. to maintain operating point constant.
28. Define ripple factor.[May 10].
Ripple factor is defined as the ratio of the effective value or rms value of the ac component of
voltage or current to the average value of voltage or current.
29. Define transformer utilization factor[Nov 07,May 09]
TUF = Dc power delivered to the load
Ac rating of transformer secondary
UNIT-II
BJT Amplifiers
1) What are the advantages of Darlington circuit
[NOV/DEC-11]
a)
b)
c)
d)
Darlington pairs are widely available in a single package or they can be made from
two separate transistors
It transfers the a.c output of one stage to the input of next stage
to
6) Why hybrid parameters are called so? Define them. [OR] Define
the various hparameters? [May-2007, May-2006, Dec-2008]
The dimensions of the hybrid parameters are not alike, that is they are
hybrid in nature, so they are called hybrid parameters.
h11= Input impedance with output port short circuited= [Vi/i1] V2=0
h12= Reverse voltage transfer ratio with input port open circuited= [V1/V2] i1=0
h21= Forward current gain with output port short circuited.= [i2/i1] V2=0
h22= Output admittance with input port open circuited. = [i2/V2] i1=0
7) Draw a CE amplifier and its hybrid equivalent circuit. [May-2008]
CM0 = Cf
R
eff
R3
1 A
Reff Large
value.
AV 1
10) What is the need of differential amplifier?[Nov/Dec-2009]
[ APR/MAY-11]
The need for differential amplifier arises in many physical measurements, in
medical electronics and in direct coupled amplifier applications. In this
amplifier, there will be no output voltage resulting from thermal drifts or any
other changes provided, change in both halves of the circuits are equal.
11) Why RE is replaced by a constant current bias in a differential
amplifier?[Dec-2008]
The emitter supply VEE used for biasing purpose must become larger as R E
is increased in order to maintain the quiescent current at its proper value.
If the operating currents of the transistors are allowed to decrease, this will
lead to higher hie values and will tend to decrease CMRR. To overcome this
practical limitation RE is replaced by a constant current bias.
12)State the various methods of improving CMRR. [Dec-2007]
, ?
IC
I E
IC
I B
I E
I B
c)
Variations in supply voltage, temperature etc will not change the gain of the amplitude.
d)
e)
the load or to the next stage of the amplifier. It blocks dc and passes
only ac part of the amplified signal.
28. What is differential mode signal?
The difference between the two input signals is generally called as
differential
signal or difference
signal.
Differential voltage Vd
Vi 2
Differential
gain
Vi1
Ad V0
Vd
V0
V V
i1
i2
(Ad)
in Db
If two inputs are used, it is dual input otherwise it is single input. If the
output voltage is measured between two collector terminals, it is balanced
output because both collectors are at the same dc potential with respect to
ground. If the output is measured at one of the collector terminal with
respect to ground, it is unbalanced output.
UNIT III
JFET and MOSFET Amplifiers
1. List the 3 basic circuit configuration. [May 03,05,09,11, Dec 04, 05, and 09].
1. Common source
2. Common drain
3. Common gate
2. Give the expression for voltage gain for CS amplifier (bypassed Rs).
Av=-gmRL
3. Give the expression for voltage gain for CS amplifier (Unbypassed Rs).
Av=-gmRL/ (1+ gmRs)
4. Give the expression for R0 and Av Common Drain amplifier.
Av=gmRL/(1+ gmRL)
5. What is Transconduction? Give its expression.
It is ratio of o/p current to i/p voltage and it represents the gain of the MOSFET
Gm=Id/Vgs= 2Kn (VGSQ-VT)
Av= -g
(Ri/(Ri+Rsi))
Since Rsi is not 0, the amplifier input voltage Vgs is less than the signal voltage. This is known as
loading effect. It reduces the voltage gain of the amplifier.
Perform DC analysis of the circuit and check whether the MOSFET is biased in the
resistance looking into the emitter of bipolar transistor is much less than the resistance
looking into the source of MOSFET.
Output resistance is very high
Minimizes the miller multiplication effect.
[APR/MAY-10, 11]
In class B mode, both transistors are biased at cut- off region because the DC bias
voltage is zero. So input signal should exceed the barrier voltage to make the transistor conduct.
Otherwise the transistor doesnt conduct. So there is a time interval between positive and
negative alternations of the input signal when neither transistor is conducting. The resulting
distortion in the output signal is crossover distortion.
13. Mention the applications of class C amplifiers [APR/MAY-11
1. It is commonly used in RF circuits where a resonant circuit must be placed at the output in
order to keep the sine wave going during the non-conducting portion of the input cycle.
2. It is also used in collector amplitude modulation, radio frequency receivers.
3. They are also used as , Troposcatter Amplifiers( transmitting and receiving microwave radio
signals over considerable distances) , FM Amplifiers , Booster Amplifiers
4. They are also used in Radar Systems.
14. What is the theoretical maximum conversion efficiency of class A power amplifier
[APR/MAY-12][NOV/DEC-09]
The efficiency of an amplifier represents the amount of a.c power delivered to load from d.c
source. It is given as,
15. Why class A amplifier must not be operated under no signal conditions.
[DEC2005]
The amount of power that must be dissipated by the transistor is the difference between
the d.c power input Pdc and the a.c power delivered to the load Pac.
Pd=Pdc-Pac
The maximum power dissipation occurs when there is zero a.c input signal. When a.c input is
zero, the a.c power output is also zero. But transistor operates at quiescent condition, drawing d.c
input power from the supply to VCC ICQ. This entire power gets dissipated in the form of heat.
Thus d.c power input without a.c input signal is the maximum power dissipation.
Pd) Max = VCC ICQ
16. Define thermal resistance. [MAY-2006] [DEC-2004]
The resistance offered by the bipolar junction transistor to the flow of heat is called
thermal resistance.
C / W
Q=QiA=(Qic+QsA+Qcs)
17. How crossover distortion is eliminated?[MAY -2003, MAY-2006, MAY-2007]
To avoid crossover distortion, a slight forward bias (0.3 V for germanium, 0.6V for
silicon) voltage is applied to the base emitter junction of both the transistors. It causes
transistor to conduct immediately when the input signal is applied. So Q point is fixed
above cut-off.
18. What is class D amplifier? [APR/MAY-13]
In order to increase the conversion efficiency, it would be desirable to make the device to
operate as a switch. So that its voltage drop remains almost at minimum value over the half
cycle of output current flow. Such a system is called class D amplifier.
19. What are advantages and disadvantages of class B amplifier? [DEC-2004]
Advantages of class B power amplifier
Due to the centre tapped transformer at input and output the core saturation
loss is reduced.
The outputs of the power amplifier are the large current and voltage.
The output of the power amplifier is carried out by DC equivalent and graphical method.
The output of the power amplifier is feed to the load.
The load must have the low output resistance. The output resistance is important.
The analysis of signal distortion in the power amplifier is important.
UNIT IV
FREQUENCY ANALYSIS OF BJT AND MOSFET AMPLIFIERS
1. Define the frequency response of an amplifier.[Dec-2006]
The frequency response of an amplifier can be defined as the variation of output of
quantity with respect to input signal frequency. In other words it can be defined as a graph drawn
between the input frequency and the gain of an amplifier.
2. Define lower and upper cut-off frequencies of an amplifier.[Dec-2005] Lower cut off
frequency:The frequency (on lower side) at which the voltage gain of the amplifier is exactly 70.7%
of the maximum gain is known as lower cut off frequency.
Upper cut off frequency:The frequency (on higher side) at which the voltage gain of the amplifier is exactly
70.7% of the maximum gain is known as upper cut off frequency.
f n
1/n
Where
2 1
n
f
L
n = Number of stages.
5. Write the overall higher cut-off frequency of multistage amplifier.[May-2008]
f nf 21/n1
H
Where
n = Number of stages.
f
H
6. Write the relation between the sag time and lower cut off frequency.
fL
pf
100
P y of tilt.
f Input signal frequency.
7. Give the relationship between Bandwidth and rise time. [Dec-2006] [APR/MAY-11]
BWfHfL
BWf .........f f
H
BWfH
LH
2.2
2t
0.35
t
r
10. Why an NPN transistor has a better high frequency response than the PNP transistor?
An NPN transistor has a better frequency response than the PNP transistor because the
mobility of electron is more and capacitive effect is less.
11. Write the relation between the sag time and lower cut off frequency.
fL
pf
100
P y of tilt.
f Input signal frequency
12. What are the advantages of representation of gain in decibels?
In multistage amplifier, it permits to add individual gains of the stages to calculate
overallgain.
It allows us to denote, both very small as well as very large quantities of linear scale by
RC coupling.
Transformer coupling.
Direct coupling.
The coupling capacitance has very high reactance at low frequency. Therefore it will
allow only a small part of signal from one stage to next stage, and in addition to that the bypass
capacitor cannot bypass or shunt the emitter resistor effectively. As a result of these factors, the
voltage gain rolls off at low frequency.
15. State the reason for fall in gain at high frequencies.
At high frequency the reactance of coupling capacitor is very low. Therefore it behaves
like a short circuit. As a result of this, the loading effect of the next stage increases which reduces
the voltage gain. Hence the voltage gain rolls off at high frequencies.
16. Why is it not possible to use the h-parameters at high frequency? [may 12]
The values of h-parameters are not constant at high frequencies. Therefore it is not
UNIT V
IC MOSFET APLIFIERS
1. Define current steering.
In IC designs, biasing circuits use constant current sources. The constant DC current called
reference current is generated at one location and is then replicated at various other locations for
biasing the various stages of amplifier present in the circuit. This process is known as current
steering.
2. State the advantages of current steering.
and stable reference current, need not be repeated for every amplifier stage.
The bias currents of various stages track each other when there is any change due to
power supply voltage or temperature
V0>= VGS-VT
V0>=Vov
Vov is override voltage
4. Give the expression for o/p resistance of cascade current mirror circuit
R0=r04+ (1+gm r04) r02
5. State advantages of Wilson current mirror circuit
The advantages of Wilson current mirror circuit is the increase in o/p resistance and
hence to increase the stability of o/p current.
6. List the various types of active loads
a) n-Channel enhancement mode device
b) n-Channel depletion mode device
c) p-Channel enhancement mode device
7. State limitations of the NMOS amplifier with enhancement load
(W 1 / L1) / (W 2 / L 2)
Kn1 / Kn2
Av=-gm1/gm2=-
This above equation the voltage gain is related to size of the transistor. Since, the voltage gain is
related to size of the transistor with a square root function, it is limited. To obtain larger voltage
gain we can use depletion mode MOSFET.
8. Give the expression for Small- Signal voltage gain of NMOS amplifier with depletion
load.
r 01 r 02
Av=Vo/Vi=-gm1 (
r 02 r 04
Ad=Vo/Vd=gm (
)= gm/(1/r02)+(1/r04)
Ad= gm/g02+g04
Acm=-1/2Rssgm3
CMRR= (gmr0)(Rss gm)
UNIT I
BIASING OF DISCRETE BJT AND MOSFET
PART B
1. Explain the voltage divider bias method & derive an expression for stability factors.
[Page.No:1.13 &1.35][Dec 13]
2. Why biasing is necessary in BJT amplifier? Explain the concept of DC & AC load line with
neat diagram. How will you select the operating point, explain it using CE amplifier
characteristics? [Page.No:1.1][June 14]
3. Explain the collector feedback bias amplifier & derive an expression for stability factors.
[Page.No:1.9 & 1.36][May 11]
4. Explain the fixed bias method & derive an expression for stability factors. [Page.No:1.7 &
1.28] [May, Dec, 08, 09, 10, 11]
5. Derive an expression for all stability factors & CE configuration S equation. [Page.No:1.28]
[Dec 10, 13]
6. Explain about common source self- bias & voltage divider bias for FET. [Page.No:2.7 &2.10]
[June 14]
7. Explain in details about biasing MOSFET. [Page.No:2.12] [Dec 13]
60
140
11. Design a collector to base bias circuit to have operating point (10v, 4mA). The circuit is
supplied with 20v and uses a silicon transistor of hfe is 250. [Page.No:1.19]
12. Design a voltage divider bias circuit for the specified conditions. VCC=12v, VCE=6v,
IC=1mA, S=20, =100 and VE=1v. [Page.No:1.13]
13. Explain the method of stabilizing the Q-point. [Dec 09, 12] [Page. No: 1.7]
14. What are the different biasing circuits for JFET? [May, Dec 03,05,06,07,08,09,10,11,12]
[Page. no: 2.22]
15. Draw and explain the circuit of full wave rectifier with resistive load. [Dec 13, 10, 08, 03
May 07, 08].
17. Derive the expressions for the rectifications efficiency, ripple factor, transformer utilization
factor, form factor and peak factor of half wave rectifier, Full wave rectifier.
16. Explain the working of bridge rectifier. Derive the expressions for R.M.S current, PIV, ripple
factor and efficiency. [Dec 06].
UNIT II
BJT AMPLIFIERS
PART B
1. Draw a CE amplifier & its small signal equivalent. Derive its Avs, Ai, Rin, Ro. [Page.No:3.6]
[Dec 14]
2. Explain with circuit diagram of Darlington connection and derive the expression for Ai, Av, Ri
&Ro. [Page.No:4.37] [Dec 14]
3. Explain Bootstrap emitter follower circuit. Compare CE, CB, CC amplifiers. [Page.No:4.42]
[June 13]
4. Explain the emitter coupled differential amplifier with neat diagram & Derive expression for
CMRR. [Page.No:4.66] [Dec 13, 07, 09, 11]
5. Discuss transfer characteristics of differential amplifier. Explain the methods used to improve
CMRR. [Page.No:4.84] [June 14]
6. Write short notes on multistage amplifiers & Draw a two stage RC coupled amplifier and
explain. Compare cascade and cascode amplifier? [Page.No:4.5 & 4.32] [Dec 02, 03, 09, 10, 12,
May 03, 05, 09, 10]
7. Derive the expressions for the voltage gain, current gain, input and output impedance of
emitter follower amplifier. [Page.No:3.23]
8. Derive the expressions for the common mode and differential mode gains of a differential
amplifier in terms of h-parameters. [Page.No:4.78] [may 03,06,07,10, dec07,09]
UNIT III
JFET AND MOSFET AMPLIFIERS
PART B
1. Describe the operation and analyze the basic JFET amplifier circuits. [Page.No:5.2] [May
03,05,11, Dec 04,05,09]
2. Derive the small signal analysis of common source amplifier. [Page.No:5.3] [Dec 09]
3. Develop a small signal model of JFET device and analyze basic JFET amplifiers.
[Page.No:5.3] [May 03,05,11]
4. Explain graphically the amplification process in a simple MOSFET amplifier circuit.
[Page.No:5.20]
5. Describe the small signal equivalent circuit of the MOSFET and determine the values of small
signal parameters? [Page.No:5.29]
6. Sketch the small signal high frequency circuit of a common source amplifier & derive the
expression for a voltage gain, input & output admittance and input capacitance. [Page.No:5.52]
7. Sketch a simple source-follower amplifier circuit and discuss the general ac circuit
characteristics. [Page.No:5.21]
8. Characterize the voltage gain and output resistance of a common-gate amplifier.
[Page.No:5.22]
9. Apply the MOSFET small signal equivalent circuit in the analysis of multistage amplifier
circuits. [Page.No:5.30]
10. Explain common source amplifier with source resistor and source bypass capacitor.
[Page.No:5.3 &5.4]
11. Write short notes Voltage swing limitations, general conditions under which a source follower
amplifier would be used. [Page.No:5.21]
12. Describe the characteristics of and analyze BiCMOS circuits. [Page.No:5.27]
13. Derive expression for voltage gain of CS & CD amplifier under small signal low frequency
condition. [Page.No:5.3 &5.13]
UNIT IV
FREQUENCY ANALYSIS OF BJT AND MOSFET AMPLIFIERS
PART B
1. With neat sketch explain hybrid CE transistor model. Derive the expression for various
components in terms of h parameters. [Page.No:6.9]
7. What is the effect of Cbe on the input circuit of a BJT amplifier at High frequencies? Derive
the equation for gm which gives the relation between gm, Ic and temperature. [Page.No:6.9]
8. Explain the high frequency analysis of JFET with necessary circuit diagram & gain bandwidth
product. [Page.No:6.6] [May 04, June 12]
11. Discuss the frequency response of MOSFET CS amplifier. [Page.No:7.15]
12. Determine the bandwidth of CE amplifier with the following specifications. R1=100k,
R2=10k, RC=9k, RE=2k, C1= C2=25F, CE=50F, rbb=100, rbe=1.1K, hfe=225,
Cbe=3pF and Cbc=100pF. [Page.No:6.25]
13. At Ic=1mA & VCE=10v, a certain transistor data shows Cc=Cbc=3pF, hfe=200, & T=500M rad/sec. Calculate gm, rbe, Ce=Cbe & . [Page.No:6.30]
UNIT V
IC MOSFET AMPLIFIERS
PART B
1. Describe the operation of an NMOS amplifier with either an enhancement load, a depletion
load, or a PMOS load. [Page.No:8.9] [Dec 14]
2. Explain the basic MOSFET two transistor current circuits and discuss its operation.
[Page.No:8.2]
3. Draw the MOSFET cascode current source circuit, explain and discuss the advantage of this
design. [Page.No:8.7]
4. Sketch and describe the advantages of a MOSFET cascode current source used with a
MOSFET differential amplifier. [Page.No:8.7&8.13]
5. Design a CMOS differential amplifier with an output gain stage to meet a set of specifications.
The magnitude of voltage gain of each stage is to be at least 600. Bias currents are to be
IQ=IREF=100A, and biasing of the circuit is to be V+=2.5 v and V-=2.5 v. [Page.No:8.17]