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IRF620
IRF620
IRF620FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
TYPE
IRF620
IRF620FI
V DSS
R DS( on)
ID
200 V
200 V
< 0.8
< 0.8
6A
4A
APPLICATIONS
INDUSTRIAL ACTUATORS
TO-220
ISOWATT220
Parameter
Value
IRF620
VD S
V DG R
V GS
Drain-source Voltage (V GS = 0)
200
200
Gate-source Voltage
20
ID
P tot
V ISO
T stg
Tj
ID
ID M()
Unit
IRF620FI
24
24
70
30
0.56
0.24
W/ o C
2000
-65 to 150
150
November 1996
1/9
IRF620/FI
THERMAL DATA
R thj-cas e
Rthj- amb
R th c-s
Tl
TO-220
ISOWATT220
1.79
4.17
Max
C/W
62.5
0.5
300
C/W
C/W
o
C
Max Value
Unit
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IA R
E AS
20
mJ
E AR
mJ
IA R
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I D = 250 A
VG S = 0
I DS S
IG SS
Gate-body Leakage
Current (V D S = 0)
Min.
Typ.
Max.
200
Unit
V
10
100
A
A
100
nA
Max.
Unit
0.55
0.8
T c = 125 oC
V GS = 20 V
ON ()
Symbol
Parameter
Test Conditions
V G S(th)
ID = 250 A
R DS( on)
Static Drain-source On
Resistance
V GS = 10V
ID = 3 A
I D( on)
Min.
2
VG S = 10 V
Typ.
DYNAMIC
Symbol
gfs ()
C iss
C oss
C rss
2/9
Parameter
Test Conditions
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
ID = 3 A
VG S = 0
Min.
Typ.
1.5
3.5
460
90
20
Max.
Unit
S
600
120
30
pF
pF
pF
IRF620/FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING RESISTIVE LOAD
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t d(on)
tr
t d(off )
tf
Turn-on Time
Rise Time
Turn-off Delay Time
Fall Time
V DD = 100 V I D = 3 A
VGS = 10 V
R G = 50
(see test circuit)
30
70
135
45
45
100
190
65
ns
ns
ns
ns
Qg
Q gs
Q gd
I D = 6 A V GS = 10 V
V DD = Max Rating x 0.8
(see test circuit)
20
6
8
30
nC
nC
nC
Typ.
Max.
Unit
6
24
A
A
1.5
Parameter
Test Conditions
IS D
I SDM()
Source-drain Current
Source-drain Current
(pulsed)
V S D ()
Forward On Voltage
I SD = 6 A
Reverse Recovery
Time
Reverse Recovery
Charge
I SD = 6 A
di/dt = 100 A/s
V DD = 100 V T j = 150 o C
t rr
Q rr
Min.
V GS = 0
170
ns
3/9
IRF620/FI
Output Characteristics
Transfer Characteristics
4/9
IRF620/FI
Transconductance
Capacitance Variations
5/9
IRF620/FI
6/9
IRF620/FI
DIM.
MIN.
inch
MAX.
MIN.
4.40
TYP.
4.60
0.173
0.181
1.23
1.32
0.048
0.051
2.40
2.72
0.094
0.107
D1
TYP.
1.27
MAX.
0.050
0.49
0.70
0.019
0.027
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
3.5
3.93
0.137
0.154
3.75
3.85
0.147
0.151
D1
L9
DIA.
H2
G1
F1
L2
F2
Dia.
L5
L9
L7
L6
L4
P011C
7/9
IRF620/FI
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
4.4
4.6
0.173
0.181
2.5
2.7
0.098
0.106
2.5
2.75
0.098
0.108
0.4
0.7
0.015
0.027
0.75
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
10
10.4
0.393
0.409
L2
16
0.630
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9.3
0.354
0.366
3.2
0.118
0.126
L3
L3
L6
F1
L7
F2
G1
1 2 3
L2
8/9
L4
P011G
IRF620/FI
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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