P0903BDL

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
V(BR)DSS

RDS(ON)

ID

25V

9.5m @VGS = 10V

56A

TO-252

ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

LIMITS

Drain-Source Voltage

SYMBOL
VDS

Gate-Source Voltage

VGS

20

Continuous Drain Current

Pulsed Drain Current
Avalanche Current

TC = 25 C

Avalanche Energy

TC = 100 C

Power Dissipation

L = 0.1mH

35
160

IAS

34

EAS

60

TJ, TSTG

mJ

49

PD

TC = 100 C

56

IDM

TC = 25 C

Junction & Storage Temperature Range

25

ID

UNITS

20
-55 to 150

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

Junction-to-Case

RqJC

2.55

Junction-to-Ambient

RqJA

63

UNITS
C / W

Pulse width limited by maximum junction temperature.

Ver 1.0

2012/4/16

P0903BDL
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 C, Unless Otherwise Noted)
PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS
MIN

TYP

MAX

1.6

3.0

UNIT

STATIC
V(BR)DSS

VGS = 0V, ID = 250mA

25

VGS(th)

VDS = VGS, ID = 250mA

1.0

Gate-Body Leakage

IGSS

VDS = 0V, VGS = 25V

100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 20V, VGS = 0V

VDS = 20V, VGS = 0V , TJ = 125 C

10

mA

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Drain-Source On-State
Resistance1

RDS(ON)

Forward Transconductance1

gfs

VGS = 5V, ID = 20A

12

19

VGS = 10V, ID = 25A

9.5

VDS = 15V, ID = 20A

60

m
S

DYNAMIC
Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Gate Resistance

Rg
Qg(VGS = 5V)

Gate-Source Charge

Gate-Drain Charge2

Qgs

VGS = 0V, VDS = 0V, f = 1MHz

tr

Turn-Off Delay Time

td(off)

VDS = 0.5V(BR)DSS, ID = 25A

11

nC

6
5
16

VDS = 15V, RL = 15
ID @ 1A, VGS = 10V, RGEN = 6

25

nS

60

tf

16
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 C)
IS

Continuous Current
1

Forward Voltage
Reverse Recovery Time

VSD

Reverse Recovery Charge

Qrr

trr

IF = 25A, VGS = 0V
IF = 25A, dlF/dt = 100A / S

Pulse test : Pulse Width 300 msec, Duty Cycle 2.

Independent of operating temperature.

Ver 1.0

1.3
25

td(on)

pF

300
190

Qgd

Turn-On Delay Time

Fall Time2

VGS = 0V, VDS = 15V, f = 1MHz

Qg(VGS = 10V)

Total Gate Charge2

Rise Time

1400

37

1.3

35

nS

61

nC

2012/4/16

P0903BDL
N-Channel Enhancement Mode MOSFET

Ver 1.0

2012/4/16

P0903BDL
N-Channel Enhancement Mode MOSFET

Ver 1.0

2012/4/16

P0903BDL
N-Channel Enhancement Mode MOSFET

Ver 1.0

2012/4/16