APM4500AK

APM4500AK
Dual Enhancement Mode MOSFET (N- and P-Channel)
Pin Description
Features
D1
D1
D2
N-Channel
20V/8A,
D2
RDS(ON) =22m(typ.) @ VGS = 4.5V
S1
G1
S2
G2
RDS(ON) =30m(typ.) @ VGS = 2.5V
P-Channel
Top View of SOP 8
-20V/-4.3A,
RDS(ON) =80m(typ.) @ VGS =-4.5V
(8)
D1
RDS(ON) =105m(typ.) @ VGS =-2.5V
(7)
D1
(6)
D2
(5)
D2
Super High Dense Cell Design

Reliable and Rugged
Lead Free and Green Devices Available
(2)
G1
(RoHS Compliant)
(4)
G2
Applications
Power Management in Notebook Computer,
S1
(1)
Portable Equipment and Battery Powered
N-Channel
Systems.
S2
(3)
P-Channel
Ordering and Marking Information

APM4500A
Package Code
K : SOP-8
Operating Junction Temp. Range
C : -55 to 150 C
Handling Code
TR : Tape & Reel
Assembly Material
L : Lead Free Device
G : Halogen and Lead Free Device
Assembly Material
Handling Code
Temp. Range
Package Code
APM4500A K :
APM4500A
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which
are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for
MSL classification at lead-free peak reflow temperature. ANPEC defines Green to mean lead-free (RoHS compliant) and halogen
free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by
weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.3 - May., 2008
www.anpec.com.tw
APM4500AK
Absolute Maximum Ratings
Symbol
(TA = 25C unless otherwise noted)
Parameter
N Channel
P Channel
VDSS
Drain-Source Voltage
20
-20
VGSS
Gate-Source Voltage
12
12
-4.3
30
-16
2.5
-2
ID*
Continuous Drain Current
IDM*
Pulsed Drain Current
IS*
Diode Continuous Forward Current
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
PD*
Power Dissipation
RJA*
VGS=10V(N)
VGS=-10V(P)
Unit
V
A
A
150
-55 to 150
TA=25C
TA=100C
0.8
Thermal Resistance-Junction to Ambient
W
C/W
62.5
Note:
*Surface Mounted on 1in pad area, t 10sec.
2
Electrical Characteristics
Symbol
Parameter
APM4500AK
Test Conditions
Min.
Typ.
Max.
Unit
Static Characteristics
BVDSS
Drain-Source Breakdown
Voltage
VGS=0V, IDS=250A
N-Ch
20
VGS=0V, IDS=-250A
P-Ch
-20
IDSS
Zero Gate Voltage Drain

Current
VDS=16V, VGS=0V
30
IDSS
Zero Gate Voltage Drain

Current
VDS=-16V, VGS=0V
-1
-30
VGS(th) Gate Threshold Voltage

IGSS
RDS(ON) a
Gate Leakage Current
Drain-Source On-State
Resistance

Rev. A.3 - May., 2008
TJ=85C
TJ=85C
N-Ch
P-Ch
VDS=VGS, IDS=250A
N-Ch
0.5
0.7
VDS=VGS, IDS=-250A
P-Ch
-0.5
-0.75
-1
N-Ch
10
P-Ch
10
VGS=4.5V, IDS=8A
N-Ch
22
26
VGS=-4.5V, IDS=-4.3A
P-Ch
80
90
VGS=2.5V, IDS=5.2A
N-Ch
30
36
VGS=-2.5V, IDS=-2A
P-Ch
105
115
VGS=10V, VDS=0V
www.anpec.com.tw
APM4500AK
Electrical Characteristics (Cont.)
Symbol
Parameter
APM4500AK
Test Conditions
Min.
Typ.
Max.
Unit
Diode Characteristics
ISD=2.5A, VGS=0V
N-Ch
0.8
1.3
ISD=-2A, VGS=0V
N-Channel
ISD=-8A, dlSD/dt =100A/s
P-Ch
-0.7
-1.3
N-Ch
15
P-Ch
22
N-Ch
Reverse Recovery Charge P-Channel
ISD =-4.3A, dlSD/dt =100A/s P-Ch
7
6
N-Ch
P-Ch
N-Channel
VGS=0V,
VDS=10V,
Frequency=1.0MHz
N-Ch
740
P-Ch
565
N-Ch
160
P-Channel
VGS=0V,
VDS=-10V,
Frequency=1.0MHz
P-Ch
125
N-Ch
125
P-Ch
95
N-Ch
10
P-Ch
12
N-Ch
11
21
P-Ch
13
24
N-Ch
40
73
P-Ch
34
62
N-Ch
23
42
P-Ch
32
59
N-Channel
VDS=10V, VGS=4.5V,
IDS=8A
N-Ch
10
13
P-Ch
N-Ch
P-Channel
VDS=-10V, VGS=-4.5V,
IDS=-4.3A
P-Ch
N-Ch
P-Ch
2.2
VSDa
Diode Forward Voltage
trr
Reverse Recovery Time
qrr
V
ns
nC
Dynamic Characteristics b
RG
Gate Resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer
Capacitance
td(ON)
Turn-on Delay Time
tr
Turn-on Rise Time
td(OFF)
tf
VGS=0V,VDS=0V,F=1MHz
N-Channel
VDD=10V, RL=10,
IDS=1A, VGEN=4.5V,
RG=6
P-Channel
VDD=-10V, RL=10,
IDS=-1A, VGEN=-4.5V,
RG=6
Turn-off Delay Time

Turn-off Fall Time
Gate Charge Characteristics
pF
ns
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
nC
Notes:
a : Pulse test ; pulse width300s, duty cycle2%.
b : Guaranteed by design, not subject to production testing.

Rev. A.3 - May., 2008
www.anpec.com.tw
APM4500AK
Typical Characteristics
N-Channel
Drain Current
2.5
10
2.0
ID - Drain Current (A)
Ptot - Power (W)
Power Dissipation
1.5
1.0
0.5
2
o
TA=25 C
0.0
20
40
TA=25 C,VG=4.5V
60
80 100 120 140 160
40
60
80 100 120 140 160
Tj - Junction Temperature (C)
Safe Operation Area
Thermal Transient Impedance

Normalized Transient Thermal Resistance
Lim
it
300s
10
1ms
Rd
s(o
n)
20
100
10ms
100ms
1s
0.1
DC
TA=25 C
0.01
0.01
0.1
10
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
1E-3
1E-4
100
VDS - Drain - Source Voltage (V)

Rev. A.3 - May., 2008
Mounted on 1in pad

o
RJA : 62.5 C/W
1E-3
0.01
0.1
10 30
Square Wave Pulse Duration (sec)
www.anpec.com.tw
APM4500AK
Typical Characteristics (Cont.)
N-Channel
Output Characteristics
Drain-Source On Resistance
60
20
16
RDS(ON) - On - Resistance (m)
VGS= 3, 4, 5, 6, 7, 8, 9, 10V
18
2.5V
14
12
10
8
2V
6
4
2
50
VGS=2.5V
40
30
VGS=4.5V
20
10
1.5V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
12
VDS - Drain-Source Voltage (V)
Gate Threshold Voltage
40
1.6
1.4
35
Normalized Threshold Voltage
20
IDS=250A
ID=8A
30
25
20
15
10
16
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25
10
VGS - Gate - Source Voltage (V)

Rev. A.3 - May., 2008
25
50
75 100 125 150
www.anpec.com.tw
APM4500AK
N-Channel
Source-Drain Diode Forward
2.00
30
VGS = 4.5V
IDS = 8A
10
1.50
IS - Source Current (A)
Normalized On Resistance
1.75
1.25
1.00
0.75
0.50
Tj=150 C
Tj=25 C
0.25
o
RON@Tj=25 C: 22m
0.00
-50 -25
25
50
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
75 100 125 150
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
1200
10
Frequency=1MHz
1100
VGS - Gate - source Voltage (V)
1000
C - Capacitance (pF)
900
800
Ciss
700
600
500
400
300
Coss
200
Crss
100
0
VDS=10V
7
6
5
4
3
2
1
0
IDS=8A
12
16
20
12
16
20
QG - Gate Charge (nC)
VDS - Drain - Source Voltage (V)

Rev. A.3 - May., 2008
www.anpec.com.tw
APM4500AK
P-Channel
Drain Current
2.5
2.0
-ID - Drain Current (A)
Ptot - Power (W)
Power Dissipation
1.5
1.0
0.5
1
o
0.0
TA=25 C
0
20
40
60
80 100 120 140 160
20
40
60
80 100 120 140 160
Safe Operation Area
Thermal Transient Impedance

Normalized Transient Thermal Resistance
10
Rd
s(o
n)
Lim
it
100
1ms
10ms
1
100ms
1s
0.1
DC
TA=25 C
0.01
0.01
TA=25 C,VG=-4.5V
0.1
10
1
Duty = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
Single Pulse
0.01
1E-3
1E-4
100
-VDS - Drain - Source Voltage (V)

Rev. A.3 - May., 2008
Mounted on 1in pad

o
RJA : 62.5 C/W
1E-3
0.01
0.1
10 30
Square Wave Pulse Duration (sec)
www.anpec.com.tw
APM4500AK
P-Channel
Output Characteristics
200
20
VGS= -4,-5,-6,-7 -8,-9,-10V
18
180
16
-3V
14
12
10
8
-2V
6
4
-1.5V
2
0
0.0
0.5
1.0
1.5
2.0
160
140
VGS= -2.5V
120
100
VGS= -4.5V
80
60
40
2.5
20
3.0
12
Gate Threshold Voltage

1.6
160
1.4
Normalized Threshold Voltage
140
20
IDS= -250A
ID= -4.3A
120
100
80
60
40
20
16
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25
10
-VGS - Gate - Source Voltage (V)

Rev. A.3 - May., 2008
1.2
25
50
75 100 125 150
www.anpec.com.tw
APM4500AK
P-Channel
Source-Drain Diode Forward

20
2.0
VGS = -4.5V
IDS = -4.3A
10
1.6
-IS - Source Current (A)
Normalized On Resistance
1.8
1.4
1.2
1.0
0.8
0.6
Tj=150 C
Tj=25 C
0.4
o
RON@Tj=25 C: 80m
0.2
-50 -25
25
50
0.1
0.0
75 100 125 150
0.9
1.2
1.5
1.8
-VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
10
Frequency=1MHz
VDS= -10V
600
-VGS - Gate - source Voltage (V)
700
C - Capacitance (pF)
0.6
800
Ciss
500
400
300
200
Coss
Crss
100
0
0.3
8
7
6
5
4
3
2
1
0
12
16
20
10
12
QG - Gate Charge (nC)

Rev. A.3 - May., 2008
IDS= -4.3A
www.anpec.com.tw
APM4500AK
Package Information
SOP-8
D
E1
SEE VIEW A
h X 45
0.25
GAUGE PLANE
SEATING PLANE
A1
A2
L
VIEW A
S
Y
M
B
O
L
SOP-8
MILLIMETERS
MIN.
INCHES
MAX.
MIN.
MAX.
1.75
0.069
0.004
0.25
0.010
A1
0.10
A2
1.25
0.31
0.51
0.012
0.020
0.17
0.25
0.007
0.010
4.80
5.00
0.189
0.197
5.80
6.20
0.228
0.244
E1
3.80
4.00
0.150
0.157
0.25
0.50
0.010
0.020
0.40
1.27
0.016
0.050
0.049
1.27 BSC
0.050 BSC
Note: 1. Follow JEDEC MS-012 AA.

2. Dimension D does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion or gate burrs shall not exceed 6 mil per side.
3. Dimension E does not include inter-lead flash or protrusions.
Inter-lead flash and protrusions shall not exceed 10 mil per side.
Rev. A.3 - May., 2008
10
www.anpec.com.tw
APM4500AK
Carrier Tape & Reel Dimensions
P0
P2
P1
B0
E1
OD0
K0
A0
OD1 B
SECTION A-A
SECTION B-B
H
A
T1
Application
SOP- 8
T1
330.02.00
50 MIN.
P0
P1
P2
D0
D1
4.00.10
8.00.10
2.00.05
1.5+0.10
-0.00
1.5 MIN.
12.4+2.00 13.0+0.50
-0.00
-0.20
1.5 MIN.
E1
20.2 MIN. 12.00.30 1.750.10 5.50.05

T
A0
B0
K0
0.6+0.00 6.400.20 5.200.20 2.100.20

-0.40
(mm)
Devices Per Unit

Package Type
SOP-8
Unit
Tape & Reel

Rev. A.3 - May., 2008
Quantity
2500
11
www.anpec.com.tw
APM4500AK
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
Critical Zone
TL to TP
Temperature
Ramp-up
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
t 25 C to Peak
25
Time
Reliability Test Program

Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD-883D-1005.7
JESD-22-B, A102
MIL-STD-883D-1011.9
Description
245C, 5 sec
1000 Hrs Bias @125C
168 Hrs, 100%RH, 121C
-65C~150C, 200 Cycles
Classification Reflow Profiles

Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak/Classification Temperature (Tp)
Time within 5C of actual
Peak Temperature (tp)
Ramp-down Rate
Sn-Pb Eutectic Assembly
Pb-Free Assembly
3C/second max.
3C/second max.
100C
150C
60-120 seconds
150C
200C
60-180 seconds
183C
60-150 seconds
217C
60-150 seconds
See table 1
See table 2
10-30 seconds
20-40 seconds
6C/second max.
6C/second max.
6 minutes max.
8 minutes max.
Time 25C to Peak Temperature
Notes: All temperatures refer to topside of the package. Measured on the body surface.
Rev. A.3 - May., 2008
12
www.anpec.com.tw
APM4500AK
Classification Reflow Profiles (Cont.)
Table 1. SnPb Eutectic Process Package Peak Reflow Temperatures
3
Package Thickness
Volume mm
<350
<2.5 mm
240 +0/-5C
2.5 mm
225 +0/-5C
Volume mm
350
225 +0/-5C
225 +0/-5C
Table 2. Pb-free Process Package Classification Reflow Temperatures

3
3
3
Package Thickness
Volume mm
Volume mm
Volume mm
<350
350-2000
>2000
<1.6 mm
260 +0C*
260 +0C*
260 +0C*
1.6 mm 2.5 mm
260 +0C*
250 +0C*
245 +0C*
2.5 mm
250 +0C*
245 +0C*
245 +0C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the
stated classification temperature (this means Peak reflow temperature +0C. For example 260C+0C)
at the rated MSL level.
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,
Sindain City, Taipei County 23146, Taiwan
Tel : 886-2-2910-3838
Fax : 886-2-2917-3838

Rev. A.3 - May., 2008
13
www.anpec.com.tw

APM4500AK

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APM4500AK

Dual Enhancement Mode MOSFET (N- and P-Channel)

RDS(ON) =22m(typ.) @ VGS = 4.5V

RDS(ON) =30m(typ.) @ VGS = 2.5V

Top View of SOP 8

RDS(ON) =105m(typ.) @ VGS =-2.5V

Super High Dense Cell Design

Power Management in Notebook Computer,

Portable Equipment and Battery Powered

Ordering and Marking Information

XXXXX - Date Code

(TA = 25C unless otherwise noted)

Continuous Drain Current

Pulsed Drain Current

Diode Continuous Forward Current

Maximum Junction Temperature

Storage Temperature Range

Thermal Resistance-Junction to Ambient

(TA = 25C unless otherwise noted)

Zero Gate Voltage Drain

Zero Gate Voltage Drain

VGS(th) Gate Threshold Voltage

Gate Leakage Current

Copyright ANPEC Electronics Corp.

(TA = 25C unless otherwise noted)

Diode Forward Voltage

Reverse Recovery Time

Turn-on Delay Time

Turn-on Rise Time

Turn-off Delay Time

Gate Charge Characteristics

Total Gate Charge

Copyright ANPEC Electronics Corp.

ID - Drain Current (A)

Ptot - Power (W)

80 100 120 140 160

80 100 120 140 160

Tj - Junction Temperature (C)

Safe Operation Area

Thermal Transient Impedance

ID - Drain Current (A)

Tj - Junction Temperature (C)

VDS - Drain - Source Voltage (V)

Copyright ANPEC Electronics Corp.

Mounted on 1in pad

Square Wave Pulse Duration (sec)

ID - Drain Current (A)

RDS(ON) - On - Resistance (m)

VDS - Drain-Source Voltage (V)

ID - Drain Current (A)

Gate Threshold Voltage

Normalized Threshold Voltage

RDS(ON) - On - Resistance (m)

VGS - Gate - Source Voltage (V)

Copyright ANPEC Electronics Corp.

75 100 125 150

Tj - Junction Temperature (C)

Source-Drain Diode Forward

IS - Source Current (A)

75 100 125 150

Tj - Junction Temperature (C)

VSD - Source - Drain Voltage (V)

VGS - Gate - source Voltage (V)

QG - Gate Charge (nC)