MITSUBISHI <INTELLIGENT POWER MODULES>

PM150RL1A120
FLAT-BASE TYPE
INSULATED PACKAGE

PM150RL1A120
FEATURE
Inverter + Brake + Drive & Protection IC
a) Adopting new 5th generation Full-Gate CSTBTTM chip
b) The over-temperature protection which detects the chip surface temperature of CSTBTTM is adopted.
c) Error output signal is possible from all each protection upper and lower arm of IPM.
d) Compatible L-series package.
3 150A, 1200V Current-sense and temperature sense
IGBT type inverter
Monolithic gate drive & protection logic
Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (P-FO available
from upper arm devices)
UL Recognized

APPLICATION
General purpose inverter, servo drives and other motor controls

PACKAGE OUTLINES

Dimensions in mm
135
122.1

11.7

26

40.5

6.05

18

(13)

26

18.7

6-M5 Nuts

(Screwing Depth)
13

6.05

1100.5

66.5

19-

0.5

30.15

11

Terminal code

L A B E L

34.7

2-2.5

13

33.6

19

10 3-2 10 3-2 10 3-2

24.1 +1
-0.5

11
4-5.5
Mounting Holes

6-2

90.1

71.5

3.25

110

21.5
20
20

780.5

N
P

10.5

1.
2.
3.
4.
5.

VUPC 6.
UFO
7.
UP
8.
VUP1 9.
VVPC 10.

VFO
VP
VVP1
VWPC
WFO

11.
12.
13.
14.
15.

WP
VWP1
VNC
VN1
Br

16.
17.
18.
19.

UN
VN
WN
Fo

May 2012
2009
November
1

MITSUBISHI <INTELLIGENT POWER MODULES>

PM150RL1A120
FLAT-BASE TYPE
INSULATED PACKAGE

INTERNAL FUNCTIONS BLOCK DIAGRAM

Br Fo

VNC WN

VN1

WP
VWP1
VWPC WFO

UN

VN

1.5k

Gnd In

Gnd

1.5k

Fo Vcc

Si Out

VP
VVPC

OT

Gnd In

Gnd

Fo Vcc

Si Out

OT

Gnd In

Gnd

Fo Vcc

Si Out

OT

Gnd In

Gnd

Fo Vcc

Si Out

OT

Gnd In

Gnd

UP
VUPC

VUP1
UFO

1.5k

Fo Vcc

Si Out

VVP1
VFO

OT

Gnd In

Gnd

1.5k

Fo Vcc

Si Out

Gnd In

OT

Gnd

Fo Vcc

Si Out

OT

MAXIMUM RATINGS (Tj = 25C, unless otherwise noted)

INVERTER PART
Symbol
VCES
IC
ICP
PC
Tj

Parameter
Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
Junction Temperature

Condition
VD = 15V, VCIN = 15V
TC = 25C
TC = 25C
TC = 25C

(Note-1)
(Note-1)

Ratings
1200
150
300
833
20 ~ +150

Unit
V
A
A
W
C

Ratings
1200
75
150
595
75
1200
20 ~ +150

Unit
V
A
A
W
A
V
C

Ratings

Unit

20

20

20

20

mA

*: TC measurement point is just under the chip.

BRAKE PART
Symbol
VCES
IC
ICP
PC
IF
VR(DC)
Tj

Parameter
Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
FWDi Forward Current
FWDi Rated DC Reverse Voltage
Junction Temperature

Condition
VD = 15V, VCIN = 15V
TC = 25C
TC = 25C
TC = 25C
TC = 25C
TC = 25C

(Note-1)
(Note-1)

CONTROL PART
Symbol

Parameter

VD

Supply Voltage

VCIN

Input Voltage

VFO

Fault Output Supply Voltage

IFO

Fault Output Current

Condition
Applied between : VUP1-VUPC, VVP1-VVPC
VWP1-VWPC, VN1-VNC
Applied between : UP-VUPC, VP-VVPC, WP-VWPC
UN VN WN Br-VNC
Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC
FO-VNC
Sink current at UFO, VFO, WFO, FO terminals

May 2012
2009
November
2

MITSUBISHI <INTELLIGENT POWER MODULES>

PM150RL1A120
FLAT-BASE TYPE
INSULATED PACKAGE
TOTAL SYSTEM
Symbol

VCC(surge)
Tstg

Parameter
Supply Voltage Protected by
SC
Supply Voltage (Surge)
Storage Temperature

Viso

Isolation Voltage

VCC(PROT)

Conditions
VD =13.5V ~ 16.5V
Inverter Part, Tj =+125C Start
Applied between : P-N, Surge value
60Hz, Sinusoidal, Charged part to Base plate,
AC 1min, RMS

Ratings

Unit

800

1000
-40 ~ +125

V
C

2500

*: TC measurement point is just under the chip.

THERMAL RESISTANCE
Symbol

Parameter

Rth(j-c)Q
Rth(j-c)F
Rth(j-c)Q
Rth(j-c)F

Thermal Resistance

Rth(c-f)

Contact Thermal Resistance

Conditions
Inverter, IGBT (per 1 element)
Inverter, FWDi (per 1 element)
Brake, IGBT
Brake, FwDi upper part

(Note.1)
(Note.1)
(Note.1)
(Note.1)

Case to fin, (per 1 module)

Thermal grease applied

(Note.1)

Min.
-

Limits
Typ.
-

Max.
0.15
0.23
0.21
0.36

0.023

Unit

C/W

Note.1: If you use this value, Rth(f-a) should be measured just under the chips.

Top View

Top View

PM150RL1A120

PM150RL1A120 350G
* 350G is printed on the label

ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise noted)

INVERTER PART
Symbol
VCE(sat)
VEC
ton
trr
tc(on)
toff
tc(off)
ICES

Parameter

Conditions

Collector-Emitter Saturation
Voltage

VD=15V, IC=150A
VCIN=0V, Pulsed

FwDi Forward Voltage

-IC=150A, VD=15V, VCIN= 15V

Switching Time

VD=15V, VCIN=0V
15V
VCC=600V, IC=150A
Tj=125C
Inductive Load

Collector-Emitter Cut-off
Current

(Fig. 1)

VCE=VCES, VD=15V , VCIN=15V (Fig. 5)

Tj=25C
Tj=125C
(Fig. 2)

(Fig. 3,4)
Tj=25C
Tj=125C

Min.
0.3
-

Limits
Typ.
1.65
1.85
2.3
0.8
0.3
0.4
1.2
0.4
-

Max.
2.15
2.35
3.3
2.0
0.8
1.0
2.8
1.2
1
10

Unit
V
V

mA

November 2012
November.
2012

MITSUBISHI <INTELLIGENT POWER MODULES>

PM150RL1A120
FLAT-BASE TYPE
INSULATED PACKAGE

BRAKE PART
Symbol
VCE(sat)
VEC
ICES

Condition

Parameter
Collector-Emitter Saturation
Voltage
FWDi Forward Voltage
Collector-Emitter Cutoff
Current

VD = 15V, IC = 75A
VCIN = 0V, Pulsed
(Fig. 1)
IC = 75A, VCIN = 15V, VD = 15V
VCE = VCES, VD = 15V

(Fig. 5)

Tj = 25C
Tj = 125C
(Fig. 2)
Tj = 25C
Tj = 125C

Min.

Limits
Typ.
1.65
1.85
2.3

Max.
2.15
2.35
3.3
1
10

Min.

1.2
1.7
300
150

Limits
Typ.
8
2
1.5
2.0

Max.
16
4
1.8
2.3

Unit
V
V
mA

CONTROL PART
Symbol

Parameter

Condition
VN1-VNC
V*P1-V*PC

ID

Circuit Current

VD = 15V, VCIN = 15V

Vth(ON)
Vth(OFF)

Input ON Threshold Voltage

Input OFF Threshold Voltage

SC

Short Circuit Trip Level

Applied between : UP-VUPC, VP-VVPC, WP-VWPC

UN VN WN Br-VNC
Inverter part
20 Tj 125C, VD = 15V (Fig. 3,6)
Brake part

toff(SC)

Short Circuit Current Delay

Time

VD = 15V

Over Temperature Protection

Detect Temperature of IGBT chip

Supply Circuit Under-Voltage

Protection

20 Tj 125C

Fault Output Current

VD = 15V, VCIN = 15V

(Note-2)

Minimum Fault Output Pulse

Width

VD = 15V

(Note-2)

OT
OT(hys)
UV
UVr
IFO(H)
IFO(L)
tFO

(Fig. 3,6)
Trip level
Hysteresis
Trip level
Reset level

Unit
mA
V
A

0.2

135

11.5

20
12.0
12.5

10

12.5

0.01
15

1.0

1.8

V
mA
ms

(Note-2) Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to
protect it.

MECHANICAL RATINGS AND CHARACTERISTICS

Condition

Parameter

Symbol

Mounting torque

Weight

Mounting part
Main terminal part

screw : M5
screw : M5

Min.
2.5
2.5

Limits
Typ.
3.0
3.0
800

Max.
3.5
3.5

Unit
Nm
Nm
g

RECOMMENDED CONDITIONS FOR USE

Symbol
VCC

Parameter
Supply Voltage

VD

Control Supply Voltage

VCIN(ON)
VCIN(OFF)
fPWM

Input ON Voltage
Input OFF Voltage
PWM Input Frequency
Arm Shoot-through Blocking
Time

tdead

Condition
Applied across P-N terminals
Applied between : VUP1-VUPC, VVP1-VVPC
VWP1-VWPC, VN1-VNC
(Note-3)
Applied between : UP-VUPC, VP-VVPC, WP-VWPC
UN VN WN Br-VNC
Using Application Circuit of Fig. 8
For IPMs each input signals

Recommended value
800

Unit
V

15.0 1.5

(Fig. 7)

0.8
9.0
20

kHz

2.5

(Note-3) With ripple satisfying the following conditions: dv/dt swing 5V/s, Variation 2V peak to peak
5V/s
2V
15V
GND
May 2012
2009
November
4

MITSUBISHI <INTELLIGENT POWER MODULES>

PM150RL1A120
FLAT-BASE TYPE
INSULATED PACKAGE
PRECAUTIONS FOR TESTING
1. Before applying any control supply voltage (VD), the input terminals should be pulled up by resistors, etc. to their corresponding supply voltage and each input signal should be kept off state.
After this, the specified ON and OFF level setting for each input signal should be done.
2. When performing SC tests, the turn-off surge voltage spike at the corresponding protection operation should not be allowed to rise above VCES rating of the device.
(These test should not be done by using a curve tracer or its equivalent.)
P, (U,V,W,B)
IN
Fo

VCIN

P, (U,V,W,B)

Ic

IN
Fo

VCIN

Ic

(15V)

(0V)

U,V,W,B, (N)

VD (all)

U,V,W,B, (N)

VD (all)

Fig. 1 VCE(sat) Test

Fig. 2 VEC, (VFM) Test

a) Lower Arm Switching

P

Fo

VCIN
(15V)

trr

Signal input
(Upper Arm)

CS

Ic

Irr

Vcc

Fo

Signal input
(Lower Arm)

VCIN

VCE

U,V,W

90%

90%
N

VD (all)

b) Upper Arm Switching

Ic

10%

10%

tc(on)

10%

10%
tc(off)

Fo

Signal input
(Upper Arm)

VCIN

VCIN

U,V,W

CS

VCIN
(15V)

Vcc

td(on)

tr

td(off)

tf

Fo

Signal input
(Lower Arm)

(ton = td(on) + tr)

(toff = td(off) + tf)

Ic

VD (all)

Fig. 3 Switching Time and SC Test Circuit

Fig. 4 Switching Time Test Waveform

VCIN
Short Circuit Current

P, (U,V,W,B)
A

VCIN
(15V)

Constant Current

IN
Fo

SC Trip
Pulse VCE

Ic

VD (all)

U,V,W,B, (N)

Fo
toff(SC)

Fig. 5 ICES Test

Fig. 6 SC Test Waveform

IPM input signal VCIN

(Upper Arm)

0V

2V

1.5V

0V
IPM input signal VCIN
(Lower Arm)

2V

1.5V

1.5V

tdead

2V

tdead

tdead

1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value

Fig. 7 Dead time measurement point example

November
May 2012
2009
5

MITSUBISHI <INTELLIGENT POWER MODULES>

PM150RL1A120
FLAT-BASE TYPE
INSULATED PACKAGE

P
20k

10

VUP1

VD

UFo

IF

1.5k

OT
OUT

Vcc
Fo

UP

In

VUPC

Si
U

GND GND

0.1

VVP1
VFo

VD

1.5k

Fo

VP

Si

In

VVPC

GND GND

VWP1
WFo

OT
OUT

Vcc

1.5k

OT
OUT

Vcc
Fo

VD

WP

Si

In

VWPC

GND GND

20k

OUT
Si

Fo
UN

In

GND GND

0.1
20k

OT

Vcc

10

IF

OT
Vcc

10

IF

OUT
Si

Fo

VN

In
GND GND

0.1
20k

VD

In

GND GND

VNC

4.7k

IF

Fo

OUT
Si

Fo
In
1.5k

OT

Vcc
Br

1k

OUT
Si

Fo

WN
0.1

OT

Vcc

10

IF

5V

VN1

GND GND

: Interface which is the same as the U-phase

Fig. 8 Application Example Circuit

NOTES FOR STABLE AND SAFE OPERATION ;

Design the PCB pattern to minimize wiring length between opto-coupler and IPMs input terminal, and also to minimize the
stray capacity between the input and output wirings of opto-coupler.
Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler.
Fast switching opto-couplers: tPLH, tPHL 0.8s, Use High CMR type.
Slow switching opto-coupler: CTR > 100%
Use 4 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the
power supply.
Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N
terminal.
Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line
and improve noise immunity of the system.

May 2012
2009
November
6

MITSUBISHI <INTELLIGENT POWER MODULES>

PM150RL1A120
FLAT-BASE TYPE
INSULATED PACKAGE
PERFORMANCE CURVES
(Inverter Part)

COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. Ic) CHARACTERISTICS
(TYPICAL)

OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)

140
13V
120
100
80
60
40
20
0.5

1.0

1.5

2.0

1.6
1.4
1.2
1.0
0.8
0.6
0.4
Tj = 25C
Tj = 125C

0.2
0

2.0

VD = 15V

1.8

50

100

150

200

COLLECTOR CURRENT IC (A)

COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. VD) CHARACTERISTICS
(TYPICAL)

DIODE FORWARD CHARACTERISTICS

(TYPICAL)

COLLECTOR RECOVERY CURRENT IC (A)

COLLECTOR-EMITTER VOLTAGE VCE (V)

2.4
2.2
2.0
1.8
1.6
1.4
IC = 150A
Tj = 25C
Tj = 125C

1.2
1.0
12

SWITCHING TIME ton, toff (s)

15V

VD = 17V

160

COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)

Tj = 25C

13

14

15

16

17

18

103

VD = 15V

7
5
3
2

102
7
5
3
2

101
7
5
3
2

100

Tj = 25C
Tj = 125C
0

0.5

1.0

1.5

2.0

2.5

CONTROL POWER SUPPLY VOLTAGE VD (V)

EMITTER-COLLECTOR VOLTAGE VEC (V)

SWITCHING TIME (ton, toff) CHARACTERISTICS

(TYPICAL)
101
VCC = 600V
7
VD = 15V
5
Tj = 25C
4
Tj = 125C
3
Inductive load

SWITCHING TIME (tc(on), tc(off)) CHARACTERISTICS

(TYPICAL)
101
VCC = 600V
7
VD = 15V
5
Tj = 25C
4
Tj = 125C
3
Inductive load

SWITCHING TIME tc(on), tc(off) (s)

COLLECTOR CURRENT IC (A)

180

toff

100
7
5
4
3

ton

101 0
10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103

100
7
5
4
3
2

tc(off)

tc(on)

101 0
10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103

COLLECTOR CURRENT IC (A)

COLLECTOR CURRENT IC (A)

November
May 2012
2009
7

MITSUBISHI <INTELLIGENT POWER MODULES>

PM150RL1A120

10.0

Eoff

8.0
6.0
4.0
2.0
0

50

100

150

DIODE REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)
1.0
100.0
VCC = 600V
0.9 VD = 15V
90.0
T
j
=
25C
0.8
80.0
Tj = 125C
0.7 Inductive load
70.0
0.6
0.5

50.0

0.4

40.0

0.3

30.0

0.2

20.0

trr

0.1
0

200

60.0

Irr

10.0
0
0 20 40 60 80 100 120 140 160 180 200

COLLECTOR REVERSE CURRENT IC (A)

SWITCHING RECOVERY LOSS CHARACTERISTICS

(TYPICAL)
15.0
VCC = 600V
VD = 15V
12.5
Tj = 25C
Tj = 125C
10.0 Inductive load

ID VS. fc CHARACTERISTICS
(TYPICAL)
VD = 15V
Tj = 25C
Tj = 125C

140.0

N-side

120.0
ID (mA)

100.0

7.5

80.0
60.0

5.0

40.0
2.5
0

UVt /UVr

160.0

P-side

20.0
0

50

100

150

200

10

15

20

25

COLLECTOR REVERSE CURRENT IC (A)

fc (kHz)

UV TRIP LEVEL VS. Tj CHARACTERISTICS

(TYPICAL)
20
UVt
18
UVr
16

SC TRIP LEVEL VS. Tj CHARACTERISTICS

(TYPICAL)
2.0
VD = 15V
1.8

14

1.4

12

1.2

1.6

SC

SWITCHING LOSS Err (mJ/pulse)

COLLECTOR CURRENT IC (A)

REVERSE RECOVERY CURRENT lrr (A)

SWITCHING LOSS CHARACTERISTICS

(TYPICAL)
20.0
VCC = 600V
18.0 VD = 15V
Eon
Tj = 25C
16.0
Tj = 125C
14.0 Inductive load
12.0

REVERSE RECOVERY TIME trr (s)

SWITCHING LOSS Eon, Eoff (mJ/pulse)

FLAT-BASE TYPE
INSULATED PACKAGE

10

1.0

0.8

0.6

0.4

0.2

0
50

50

100

0
50

150

Tj (C)

50

100

150

Tj (C)

November
May 2012
2009
8

MITSUBISHI <INTELLIGENT POWER MODULES>

PM150RL1A120
FLAT-BASE TYPE
INSULATED PACKAGE
(Brake Part)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(TYPICAL)

OUTPUT CHARACTERISTICS
(TYPICAL)

COLLECTOR CURRENT IC (A)

101
7
5
3
2

102 Single Pulse

7
5 IGBT part;
3 Per unit base = Rth(j-c)Q = 0.15C/ W
2 FWDi part;
Per unit base = Rth(j-c)F = 0.23C/ W
103 5
10 2 3 5 7104 2 3 5 71032 3 5 7102 2 3 5 71012 3 5 7100 2 3 5 7101

Tj = 25C

90

15V
VD = 17V

80
70

13V

60
50
40
30
20
10
0

0.5

1.0

1.5

2.0

COLLECTOR-EMITTER VOLTAGE VCE (V)

COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. Ic) CHARACTERISTICS
(TYPICAL)

COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. VD) CHARACTERISTICS
(TYPICAL)

COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)

t(sec)

2.5

VD = 15V

2.0

1.5

1.0

0.5
Tj = 25C
Tj = 125C
0

COLLECTOR RECOVERY CURRENT IC (A)

100

7
5
3
2

20

40

60

80

2.4
2.2
2.0
1.8
1.6
1.4
IC = 75A
Tj = 25C
Tj = 125C

1.2
1.0
12

100

13

14

15

16

17

18

COLLECTOR CURRENT IC (A)

CONTROL POWER SUPPLY VOLTAGE VD (V)

DIODE FORWARD CHARACTERISTICS

(TYPICAL)

TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(TYPICAL)

103

100

VD = 15V

7
5
3
2

NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth(j-c)

COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)

NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth(j-c)

100

102
7
5
3
2

101
7
5
3
2

100

Tj = 25C
Tj = 125C
0

0.5

1.0

1.5

2.0

2.5

3.0

EMITTER-COLLECTOR VOLTAGE VEC (V)

7
5
3
2

101
7
5
3
2

102 Single Pulse

7
5 IGBT part;
3 Per unit base = Rth(j-c)Q = 0.21C/ W
2 FWDi part;
Per unit base = Rth(j-c)F = 0.36C/ W
103 5
10 2 3 5 7104 2 3 5 71032 3 5 7102 2 3 5 71012 3 5 7100 2 3 5 7101
t(sec)

May 2012
2009
November
9