CM BIN NHIT

(TEMPRATURE SENSOR)

1. Khi nim chung

1.1. Khi nim cm bin nhit
Cm bin nhit l cc vt liu kim loi hoc l bn dn c gi tr in tr
thay i theo nhit hoc dng in phn cc ngc cc lp tip gip thay
i khi b tc dng bi nhit .
-Nhit c vai tr quyt nh nhiu tnh cht cu vt cht.Mt trong
nhng c im tc ng ca nhit l lm thay i 1 cch lin tc cc i
lng chu nh hng ca n. Do trong khoa hc, cng nghip v i
snghng ngy vic o lng v khng ch nhit l mt iu rt cn
thit. o lng nhit v t kt qu o lng c th khng ch nhit
ta dng ti cm bin nhit. cm bin nhit c dng ph bin trong
dn dng v cng nghip vi mc ch khng ch v diu chnh nhit .
1.2. Thang o nhit
Ta c 3 thang o:
--Thang Kenvin (0K).
Trong thang ny nhit ca im cn bng 3 trng thi nc-nc -hi
nc c gn tr s 273,150K.
--Thang Cenlsius-thang bch phn (0C).
T(0C)=T(0K) - 273,15
--Thang Farenheit (0F).
T(0F).=1,8T(0C) + 32
2. Nhit in tr kim loi

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Nhit in tr kim loi l 1 loi cm bin s dng cc kim loi: Platin,

Niken v 1 s oxit kim loi c in tr thay i theo nhit m n b tc
ng.
2.1.

Nhit in tr Platin (Pt).

a. c im.
Nhit in tr platin c ch to t kim loi platin kt hp vi 1 s
hp cht kim loi khc tng in tr thanh o nhit hoc tng bn.
y l loi cm bin o nhit rt thng dng trong cng nghip, c di
nhit o c t -2000C n 8500C.
Quan h gia in tr ca in tr platin vi nhit mi trng o
xc nh theo a thc:
+Di o t -2000C n 00C
R(t)=R0.(1 + A.t + B.t2 + C.[t-1000C].t3)
+Di o t 00C n 8500C
R(t)=R0.(1 + A.t + B.t2)
Trong A,B,C l cc h s thc nghim
A = 3.9082.10-3
B = -5,082. 10-7
C = -4,2735. 10-12
R0 : nhit in tr ca in tr Pt 00C.
Trong khong nhit trn 00C nhit c tnh theo s thay i ca
in tr Pt nh sau:
t = (-R0.A + [(R0.A)2 4.R0.B.(R0 R)]1/2)/(2. R0.B)
*u & nhc im:
-u im:

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+Di o rng.
+ chnh xc cao.
+ng dng ph bin trong cc l nhit.
-Nhc im:
Do phi s dng hp cht platin trong mi trng nhit cao nn
tnh cht vt l ca n s b thay i theo thi gian v vy u o phi
c thay mi nh k.
b. Cc nhit in tr Pt thc t
(hnh nh minh ha)
Trong thc t ngi ta ch
Pt-1000..
Nhit in tr
Pt-100
Pt-500
Pt-1000
2.2.

to cc nhit in tr: Pt-100, Pt-500,

R0
100
500
1000

S thay i nhit
0,4/0K
2/0K
04/0K

Nhit in tr Niken
-c ch to t kim loi chnh l Niken theo tiu chun DIN
43760. Thng trong thc t ch ta Ni-100 c di o t -600C n
2500C.
-Tr s in tr c trng 00C l R0 = 100.
Quan h gia nhitd din tr v mi trng o:
R(t) = R0.(1 + A.t + B.t2 + C.t4 + D.t6)
Trong :
A =0,5845.10-2
B = 0,665.10-2
C = 2,805. 10-4
D = 2,111. 10-7
-c im: Ni-100 c dung sai khng ln nn lc no ta cng c th
thay th cci khc c cng cp dung sai m ko cn chun nh li.

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Trong thc t Ni-100 c ng dng trong khng ch nhit ca

iu ha.
2.3. K thut ni dy.
in tr ca nhit in tr thay i theo nhit ,vi mt dng in
khng i qua nhit in tr ta c th o c V = R.I nh vy khi R thay i dn
ti V thy i. cm bin khng b nng ln khi o th dng in cn phi nh
khong 1mA. Vi Pt-100 1000C ta c U = 0,1V. in th ny cn a ti my
o vi sai s thp nhp. thc chin iu ny l phi c cc k thut ni dy o.
Ta c 4 k thut.
a. K thut ni 2 dy

Phng php ny t s dng do sai d vn ln.

b. K thut 3 dy

K thut ny c dng rt ph bin. K thut ny yu cu 3 dy o c

cng tr s k thut v cng nhit .
c. K thut 4 dy

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K thut ny cho kt qu tt nht.

d. K thut 2 dy vi b bin i tn hiu o
Vn dng 2 dy o nhng khng b sai s bng ch thay i tn hiu o.
B bin i bin i tn hiu ca cm bin thnh 1 dng ienj chun tuyn
tnh vi nhit v cng t 4mA n 20mA. Dng in nui cho b
bin i c ti qua hai dy o vi cng khong 4mA.
2.4. Nhit in tr bn dn:(Thermistor):
Lm t hp cht bt oxit nn nh hnh,nung nhit 10000C v c trng
2 lp kim loi 2 mt kt ni vi h thng mch bn ngoi. MgO ;
MgAl2O4 ; Mn2O3 ; Fe3O4.
u im: c nhy nhit cao,di o t 50C n 150C. Nhc im ca
in tr bn dn l c tnh nhit c phi tuyn cao, kh khc .
Khng c s dng lm cm bin o nhit m dng cnh bo v khng
ch nhit .
2.5. Cu trc ca nhit in tr kim loi
a. Nhit in tr v gm bc kim loi
Si Pt hoc Ni c qun bn trong ng gm s bn ngoi bc bng kim
loi chu nhit cao tng bn c hc. Cu trc ny cho di o t -2000C
n 8000C.
b. Nhit in tr v thy tinh
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Si Pt c qun bn trong 1 ng thy tinh. Loi cm bin ny c nhy v

bn c hc cao cho di o t -2000C n 4000C dng trong mi trng ha cht
v n mn cao.
c. Nhit in tr v nha
Dy Pt c ng knh khong 30m c dn kn gia 2 lp nha poliamit.
ng dng o nhit b mt cc ng hoc cun dy bin th cao p. Di o t 800C n 2300C.
d. Nhit in tr k thut mng mng.
Platin c phun ph bng phng php phun ion hoc bc hi chn khng ln
mt nn nhm oxit vi dy khong 1m. Sau lp Pt s c to thnh 1
dng gp khc bng phng php quang khc hay bng tia laze. Cui cng c
ph ln bng 1 lp thy tinh. Di o ca loi ny t -500C n 4000C.
u im: cc nhit in tr k thut mng mng c thi gian hi p rt b v
quan tnh nhit b. Vi k thut mng mng nhit in tr c s n nh lu di,d
thay th v di o rng.
3. IC cm bin nhit
Hin nay c rt nhiu loi IC bn dn dng o nhit cho di o t
- 55 C n 1500C. Sau y l 1 s loi IC cm bin nhit :
0

3.1.

LM35 IC cm bin nhit ca hng National Semiconductor

LM35 c in p ng ra t l trc tip vi nhit thng o 0C, in p ng

ra l 10mV/0C v sai s khng tuyn tnh l 1,8mV cho ton thang o. in p
ngun nui c th thay i t 4V n 30V.
LM35 c ch to cho 3 thang o:
-550C n 1500C loi LM35 v LM35D.
-400C n 1100C loi LM35C v LM35CA.
00C n 1000C loi LM35DA.
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3.2 AD22100 IC cm bin nhit ca hnh Analog Devices

IC ny c h s nhit 22,5mV/0C. in p ng ra c cng thc:

Vout = (V+/5V).(1,375V + 22,5mV/0C.T)

Trong :
V+ l tr s in p cp.
T l nhit cn o.
Cc IC trong h AD 22100:
AD22100 KT/KR cho di o t 00C n 1000C.
AD22100 AT/AR cho di o t -400C n 850C.
AD22100 ST/SR cho di o t -500C n 1500C.

4. Cm bin nhit in tr.

Cu to: c lm t bt oxit kim loi.
4.1. Nhit in tr NTC (Negative Temperature Cofficient).
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L in tr c h s nhit m,c bn cht l cc in tr bn dn c in

tr gim khi nhit tng. in tr ca NTC gim mnh khi nhit gia
tng. T 00C n 1500C in tr ca NTC gim i 100 ln.
NTC l hn hp a tinh th nhiu oxit gm c chy nhit cao
nh Fe2O3, Zn2TiO4, MgCr2O4, TiO2 hay NiO, CO, Li2O.
- ng dng:
+Khi lm vic vi dng in b, NTC c dng lm thit b o nhit .
+Khi dng in lm vic ln,dng NTC o mc cht lng.
4.2.

Nhit in tr PTC (Positive Temperature Cofficient).

in tr c h s nhit dng,c bn cht l mt in tr bn dn c

in tr tng khi nhit tng. nhit nh hn 1100C in tr ca n
nh c trm m v bin i khng ng k. Khi nhit vt qu 110 th
in tr ca n tng ti hng ngn mga m.
Vt liu ch to PTC gm c hn hp: Ba2CO3, StO, TiO c p v nung
nhit cao.
-ng dng: dng bo v ng c in khi xy ra s c ngn mch hay
qu ti hoc l iu khin mc nhit..
5. Cp nhit (Thermocouple).
Cp nhit l loi cm bin nhit nguyn l hot ng da trn hiu ng Peltier,
Thomson v Sheebek.
5.1. Hiu ng Peltier
Hai dy dn A v B khc nhau, tip xc vi nhau v c cng mt nhit s to
nn mt hiu in th tip xc. Hiu in th ph thuc vo bn cht vt dn v
nhiu .

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5.2. Hiu ng Thomson

Trong mt vt dn ng nht A. Nu hai im M v N c nhit khc nhau
s sinh ra mt sc in ng. Sc in ng ny ph thuc vo bn cht vt dn v
nhit ti hai im:

5.3. Hiu ng Sheebek

Nu c mt mch kn to thnh t hai vt dn A,B v hai u chuyn tip c
nhit khc nhau T1 v T2.
Chng to thnh mt mt cp nhit in v c sc i ng do kt qu ca hai
hiu ng Peltier v Thomson v gi l sc in ng Sheebek

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Sc in ng ny ch ph thuc vo T1 , T2 v c th biu din di dng:

Khi mt u tip xc gi nhit n nh (v d T2 = C) v u kia (T1) t

mi trng c nhit thay i.
Sc in ng s l hm s ca nhit T1

C - Hng s
T1 - Nhit u lm vic
T2 - Nhit u t do (mi trng)
5.4. Vt liu ch to cp nhit
Vt liu ch to cp nhit cn c sc in ng nhit in ln, gi c bn
khi t nng nhit cao, in dn ln, h s nhit nh, c tnh cht nhit
n nh.
C kh nng chng c xy ho nhit lm vic.Vt liu ch to cp nhit
c tnh ng nht v c thnh phn n nh.
Khi ch to cp nhit cn trnh gy nn sai s do sc in ng nhit k sinh do
dy gp khc, mi hn c khch thc ln..v.v
Dy cp nhit t trong ng s cch in, bn ngoi l mt lp v bc kn.V
thng c lm bng thp.
5.5 . Cc vn khi dng cp nhit.
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- Tnh cht ca cp nhit in theo thi gian.

-C sai s trong php o vi cp nhit.
- Ni di dy ni cp nhit ti thit b o.
-Thi gian hi p lu.
6. MT S NG DNG THC T CA CM BIN NHIT
a. Cm bin nhit c np trn cnh tn nhit ca mt s b ngun v mt
s thit b trong mch in t o v iu khin cnh bo nhit:

b. Cm bin nhit c np trong cc my p trng o v duy tr nhit

n nh
c. Ngoi ra cm bin nhit c s dng trong my sy cng nghip a
nng (sy dc phm,sy nng sn,thc phm..) dng iu khin mc
nhit khc nhau tu theo yu cu ca tng loi i tng. Cm bin nhit
cn c s dng trong cc nghnh cng nghip ln nh sn xut xi
mng,sn xut thp, bng si, p nha...v.v..

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