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GT 40 Q 321
GT 40 Q 321
GT40Q321
Voltage Resonance Inverter Switching Application
Enhancement-mode
Unit: mm
Symbol
Rating
Unit
Collector-emitter voltage
VCES
1200
Gate-emitter voltage
VGES
25
@ Tc = 100C
Continuous collector
current
@ Tc = 25C
IC
23
42
ICP
80
DC
IF
10
Pulsed
IFP
80
@ Tc = 100C
A
A
A
68
170
Tj
150
Tstg
55 to 150
Characteristics
Symbol
Max
Unit
Rth (j-c)
0.74
C/W
Rth (j-c)
1.79
C/W
Collector power
dissipation
@ Tc = 25C
Junction temperature
Storage temperature range
PC
JEDEC
JEITA
TOSHIBA
2-16C1C
Thermal Characteristics
Equivalent Circuit
Collector
Gate
Emitter
2003-02-05
GT40Q321
Electrical Characteristics (Ta = 25C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
IGES
VGE = 25 V, VCE = 0
500
nA
ICES
5.0
mA
VGE (OFF)
IC = 40 mA, VCE = 5 V
4.0
7.0
VCE (sat)
Input capacitance
Cies
tr
Rise time
Switching time
Turn-on time
ton
Fall time
tf
Turn-off time
IC = 40 A, VGE = 15 V
2.8
3.6
3200
pF
Resistive Load
0.19
VCC = 600 V, IC = 40 A
0.25
VGG = 15 V, RG = 39 W
0.41
0.72
0.57
(Note 1)
toff
VF
IF = 10 A, VGE = 0
2.0
trr
IF = 10 A, di/dt = 20 A/s
0.6
VGE
90%
10%
0
RG
RL
IC
90%
VCC
0
90%
10%
VCE
10%
td (off)
tf
toff
tr
ton
The GT40Q321 is only intended for single-transistor voltage resonant circuits in induction heating (IH)
equipment. For other applications, please contact your nearest Toshiba sales office.
Do not use devices under conditions in which their maximum ratings will be exceeded. A device may break
down or its performance may be degraded, causing it to catch fire or explode resulting in injury to the user. It is
therefore necessary to incorporate device derating into circuit design.
In all IGBT devices, maximum collector-emitter voltage (VCES) decreases when the junction temperature
becomes low. It is therefore necessary to incorporate device derating into circuit design.
Maximum collector current is calculated from Tj MAX.(150C), the thermal resistance and DC forward power
dissipation. However its limited in real application by another factors such as switching loss, limitation of the
inner bonding wires and so on.
2003-02-05
GT40Q321
IC VCE
VCE VGE
10
15
Common emitter
12
60
(V)
20
VCE
Common emitter
Tc = 25C
10
Collector-emitter voltage
Collector current
IC
(A)
80
40
VGE = 8 V
20
0
0
Collector-emitter voltage
VCE
Tc = -40C
8
6
80
4
0
0
(V)
40
IC = 10 A
20
10
15
VCE VGE
(V)
(V)
VCE
Collector-emitter voltage
VCE
Collector-emitter voltage
Common emitter
Tc = 25C
6
80
4
40
20
IC = 10 A
10
15
20
Tc = 125C
8
40
4
20
2
0
0
25
80
(V)
IC = 10 A
10
(A)
IC
Collector current
40
20
25
Tc = 125C
4
20
25
(V)
VCE (sat) Tc
6
Common emitter
VCE = 5 V
60
0
0
15
IC VGE
80
(V)
10
Common emitter
0
0
25
VCE VGE
10
20
Common emitter
VGE = 15 V
80
4
40
3
20
2
IC = 10 A
1
-40
8
12
0
-60
16
(V)
-20
20
60
Case temperature Tc
100
140
(C)
2003-02-05
GT40Q321
VCE, VGE QG
C VCE
(V)
Common emitter
RL = 7.5 W
Tc = 25C
VCE = 300 V
100 V
10
200 V
100
0
0
50
100
Gate charge
5000
3000
Cies
1000
500
300
Coes
100
Common emitter
50 V
GE = 0
30 f = 1 MHz
Tc = 25C
10
0.1
1
0.3
0
200
150
QG
10000
(pF)
15
Capacitance C
300
200
50000
30000
20
(V)
400
(nC)
Switching time
Common emitter
VCC = 600 V
RG = 39 W
VGG = 15 V
Tc = 25C
0.5
toff
0.3
tf
0.1
ton
tr
0.05
0.01
0
10
20
30
Collector current
IC
40
tf
0.3
ton
tr
0.1
0.05
(A)
10
IC max
(continuous)
(A)
10 ms*
10
500
300
100
50
30
10
5
3
DC
operation
1000
Tj 125C
VGG = 20 V
RG = 10 W
1000
10 ms*
10
5
3
100 ms*
300
100
5000
3000
IC
500
300
30
Collector current
(A)
IC
(V)
toff
0.5
0.01
1
50
1000
Collector current
1000
Common emitter
3 VCC = 600 V
IC = 40 A
VGG = 15 V
Tc = 25C
1
1
1
VCE
300
0.03
0.03
50
30
100
30
Switching time RG
(ms)
(ms)
10
Switching time
Collector-emitter voltage
Switching time IC
10
Cres
30
100
300
Collector-emitter voltage
1000
VCE
1
1
3000 10000
(V)
10
30
100
300
Collector-emitter voltage
VCE
(V)
2003-02-05
GT40Q321
rth (t) tw
Common emitter
Tc = 25C
102
VGE = 15 V
40
30
20
101
Diode stage
10
IGBT stage
10-1
10-2
10
10-3
10-5
0
25
50
75
100
Case temperature Tc
125
10-4
10-3
150
tw
101
(s)
trr, Irr IF
0.8
-40
25
(ms)
Tc = 125C
(A)
Common collector
VGE = 0
0.6
trr
60
40
20
10
0
Forward voltage
102
(C)
(A)
Forward current IF
100
10-1
Pulse width
IF VF
80
10-2
VF
0.4
(V)
Irr
0.2
2
Common collector
di/dt = -20 A/ms
0
0
6
trr
Tc = 25C
10
20
Forward current
30
IF
40
ICmax
(A)
ICmax Tc
50
0
50
(A)
16
(A)
0.8
20
Common collector
IF = 10 A
Tc = 25C
0.6
12
trr
0.4
0.2
0.0
0
Irr
50
100
di/dt
150
200
trr
Irr
(ms)
1.0
0
250
(A/ms)
2003-02-05
GT40Q321
000707EAA
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
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such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
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document shall be made at the customers own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
2003-02-05