J.S.11S.

U <~>z)ni-C,onaiLct:oi

, One.

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.

TELEPHONE: (973) 376-2922

(212)227-6005
FAX: (973) 376-8960

2SA671

Silicon PNP Power Transistor

DESCRIPTION
Low Collector Saturation Voltage: VCE(SUS)= -1.0V(Max)@ lc= -2.0A

DC Current Gain
: hFE= 35-320 lc= -0.5A
Complement to Type 2SC1061

PIN 1.BASE
J. COLLECTOR
TO-220C package

APPLICATIONS
Designed for use in low frequency power amplifier
applications.

-*
3 -< ii/ H ,,--

M i

ABSOLUTE MAXIMUM RATINGS(Ta=25'C)

J (

-.
*

yE

A*

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-50

Vceo

Collector-Emitter Voltage

-50

VEBO
Ic

Emitter-Base Voltage

-4

Collector Current-Continuous

-3

i
*

ij *

H
'"T

K
f

1
L

J*

*U j
.

H <
c

ICM

Collector Current-Peak

IB

Base Current-Continuous

PC
Tj
Tstg

i
-6

-0.5

Total Power Dissipation

@ TC=25'C

25

Junction Temperature

150

'C

-55-150

Storage Temperature Range

mm
MN
DtM
15. 50
A
9.<)0
B
4.;>0
C

D
F
G

H
J
K
L
0

THERMAL CHARACTERISTICS
SYMBOL

PARAMETER

MAX

UNIT

R
S
U

Rth j-c

Thermal Resistance, Junction to Case

5.0

c/w

MAX
15.90
10,20
4,50
o:ro 0.90
3.-10
3.70
4.< 18 5.18
2.6 8
2.90
0.-M
0,60
13. 00 13.40
i.: 0 1.45
2.90
2. ro
2, 30
2.70
i;29 1.35
6. 45 6.65
8. 66 8.86

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions \vithout
notice. Inforrrmtion furnished by N.I Semi-Conductors is helieved to he both accurate and reliable at the time of going
to press. I kmcver. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. "
N.I Semi-Condiictors encourages customers to verity that datasheets arc current before placing orders.

Qualify Semi-Conductors
Downloaded from: http://www.datasheetcatalog.com/

Silicon PNP Power Transistor

2SA671

ELECTRICAL CHARACTERISTICS
unless otherwise specified
SYMBOL

CONDITIONS

PARAMETER

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

lc= -50mA ; IB= 0

-50

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= -5mA ; lc= 0

-7

vCE(sat)

Collector-Emitter Saturation Voltage

lc= -2A; IB= -0.2A

-1.0

VBE(OH)

Base-Emitter On Voltage

lc=-1A;V C E=-4V

-1.5

ICBO

Collector Cutoff Current

VCB= -25V ; IE= 0

-100

uA

IEBO

Emitter Cutoff Current

VEB= -4V; lc= 0

-100

U A

hpE-1

DC Current Gain

lc=-0.1A; VCE=-4V

35

hpE-2

DC Current Gain

lc=-1A;V C E =-4V

35

Current-Gain Bandwidth Product

lc= -0.5A;VCE= -4V; f,est= 1MHz

fi

E.! Classifications

35-70

60-120

100-200

160-320

Downloaded from: http://www.datasheetcatalog.com/

320

MHz

This datasheet has been downloaded from:

www.DatasheetCatalog.com
Datasheets for electronic components.

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