1393-Jozveh Avanced Surface

Advanced Surface Engineering
Dr. A. A. Farashiani, University of Sistan and Baluchestan, 1393
. )(Surface
.
) (Interface .
.

.
.
.
.
) ( .
.
: PN-73/M-04250
- .
: ) ( .
.

.
)( : )
( .
.

.
1960 ) (Materials Engineering
.
.
.
.
1970 .
.
1

.
.
1993-95
. 1980
.
.
.1
.2
.3

) ( ) (
) ( )(
.

. -
-
.

.
)( .
.
.

.

. .

. .
,
) ( )
( 1 2
3 4
. 1
.
-1
.

)(Antiglare and Antireflective coatings

.
:
1
)Physical Vapor deposition (PVD

)Chemical vapor Deposition (CVD
3
Shut Blast
4
Sand Blast
2
:
:
:
:
.
.
. .
.
.
)( .
) (

.
2
1
LEED HEED .
) (Spectroscopy 3SIMS .
. (Technical
) Surfaces )(
) (Adsorbed .
.
.

.
. ESCA5 SIMS6 .
) (
. .

.
LEED= Low Energy Electron Diffraction

HEED= High Energy Electron Diffraction
3
SIMS=Secondary_Ion Mass Spectroscopy
4
)Auger Electron Spectroscopy (+AES
5
)Electron Spectroscopy for Chemical Analysis (=ESCA
6
)Secondary-Ion mass Spectroscopy (=SIMS
2
- .
.

.
)( .
) (coatings.
.

)) (PVD (

) (
.
PVD .
.
)(multilayer coatings
)(graded composition deposits
5
)(very thick deposits
)(freestanding structures
PVD (1-10 nm) 10 -100 .

PVD
)(vacuum evaporation
)(sputter deposition
)(ion plating

) (vacuum evaporation PVD

.
- ) (line-of-sight .
.
10-5 Torr 10-9 Torr .
.
.

.

.
.

)( .
- .
.
.

. ) (TiN ) (ZrN
. ) (
) ( .
.

)(

) (
) ( .
) (
.

) (Ion Plating ) (Ion Assisted Deposition=IAD

) (Ion Vapor Deposition=IVD

.

.

.
) ( .
)(CVD

.
.

) (plasticizers
. .
7
) (H-O-H 13
2.98 ) (O-O 2.40 ) (H-H .
.
) (atomic mass unit = amu .
1/12 12 1.6610-24 g . 3.1
.
3.1 ) (amu
.

PVD
.
) (10 -3 Torr 10-6 1013 molecules/cm3
. ) (10-6 Torr 10-9 1010 molecules/cm3
. ) (VUHV-10-12 Torr 104 molecules/cm3.

1/2mv2 m v 3/2kT
k T . 3/2kT 0.025 eV.

. /
. .

.
.
.
0 C
) ( .
) ( .

)(capacitance manometer gauge

) (

)( .
.
) ( .
. Nude
.

.
.
.

.

.
.

.

.
)( .
.
3.4
3.4.1
.

-O ) (
)
(
) (
) ( / )(
) ( .
/ .
.
10
.
10-5- 10-7 Torr
.
.

. 3.7
.
.
) (desorption
) ( .
. ) (Torr-liters/sec.cm2
. UHV 300 -400 C )(
.
.
.
.
.

.
)( .

. .
.
torr-liters/sec.cm2 grams/sec.cm2 .
.
5 C .
ASTM E959-90
25 C 24 510 -5 Torr %1 .
.
.
. ) (1000 C
.
11

.
PVD
.
. .

. ) (plasticizers .
.
.

) (
. .
.
.
) (VitonTM O rings .
PVD .

.
.
)(fixturing
)(small diameter plumbing
)(baffles

)(valves
)(bends in tubing
)(traps
)(screens
) (L/r . 3.8
L r .

12
.
C ) ( .
Ctotal = C1 + C2 + C3 +
) (3
... C3 C2 C1 .
) ( .
1/Ctotal = 1/C1 + 1/C2 + 1/C3 +
) (4
)(PVD
) (Ion Assisted Deposition=IAD

) (Ion Vapor Deposition=IVD
.
.
.

) ( .

.
) (Surface Energy ) (Surface Energy

) (.1
:1 .
Fundamentals of Ceramics, Barsoum
13
. G .

. ) (Surface Energy
. )
erg/cm2 ( mJ/m2
.
) (
) ( 100 erg/cm2 )
( )(
) 0 ( .
10 erg/cm2 .

.
Ns Ebond .
= NSEbond
)(1

)(2

.
ro
Z1 Z2 ) NaCl +1 -1 Al2O3 -2 +3(.
) (permittivity 8.8510-12 C2/(j.m)
o
19
(q) =1.610 - C
e
.
n
Ns .
) (1
) (100 .
:2 ) (100
) (110 .
14
:3 ) (110
2
) (110 .

) ( ) (100 ) (

2
2
) ro ( A = (2ro)2 = a2

Ntotal = 2(2rp)2
)= (41/4=41/2+1
4

] ) = 4/[2 (2
2 .
)(3
.
) ( .
)( .
) (Relax .
:
15
: ) (100 ) (110 NaCl 32/0

. ro = 2.8310-10 m n = 9.
: ) (100.
1
9
(1)(+1)(1.6 10
(
. 2.83 10
4.51 /
8.85 10
0.32 J/m2
. ) (110
) 2(2 )(2 . 2 2
4 2
)( .
.:

6.36 J/m2 .
Ns .
Ns = (CN-CNp)/2

CN
CNp
CN=6 3 CNp=2 .
= (6-2)/2 = 2
) (111
= (6-0)/2 = 3
.
.
G .
. ) (Surface Energy
.
) erg/cm2 ( mJ/m2
.
) (
) ( 100 erg/cm2 )
( )(
) 0 ( .
10 erg/cm2 .
16
-1( == 3
)
)
(
(
( ) (100 ) (111 MgO .

. .
( NaCl ) (100 ) (110
.
-2 Ge
) ( ) (100 ) (111 .
Ge 0.565 nm
5.32 g/cm3.
: ) 1.251015 bonds/cm2 (100 ) 0.721015 bonds/cm2 (111.
-3 C-C 376 kj/mol . ) (111
. ) (100 .
: 3.51 g/cm3 0.356 nm.
(111) = 9.820 J/m2 :

. ) (
.
.
:

.
) (
.
17
)(
. )
( . -
)( ) ( .

.
. .
.
.
.
.
.
. .
18

. Ra
.

) (.
Ra . Ra
Ra .

.
.

) (Surface Texture
. ) (Surface finish

. .
.
) ( ) (smoothness )(
) (medium )) (waviness(
)) (Roughness(
19
: )( ) (
) (Smoothness Stylus .
.
/ /
.

.1 .
.2 .
.
H=10 -30 kcal/mole
H=2 -6 kcal/mole.

. ) (Adhesion adhesio .
)( ) (
. ) (Cohesion
. ) (Adsorption.
) (
. ) (Chemisorption
. ) (
. Wa

Wa f a 111
20
. ASTM

.
.
.

) ( .
)(
. (EA) 1 (BA) 2
:
EA BA RS MSE

RS
)(Residual Mechanical Stress
MSE )(Method-Specific Error of Measurement

. .
. Wad .
W ad S1 S 2 S1,2

1 2.
S1 S 2
1 2.
S1,2

.
.1
.2
.3 ) (
(
(
)Experimentally Adhesion (EA

)Basic Adhesion (BA
21
1
2
0/1 eV 10 eV .
.1 )(Physisorption
.2 )(Chemisorption
.3 )(Chemical bonding
.
. ) (Technological Surface Layers.
.
. (Service generated
) layers .

) (
.1
.2 -
.3
.4 -
.5
.6

) (.
.
22
.1

.
.2 -
:

)(

) (
.3
.
) (

) (
) (
23
.4 -

.
. .
)(Powder Pack
) (
) (
) (
.
.
.5

.
.6 -:
:

)(

) (
.7 :
.
) (

) (
) (

) (
.8 -:

.
. .
)(Powder Pack
) (
24
) (
) (
.
.

)( .

.
.

.
.

. .
) ( )
( )
( ) ( )
( )
( .
.
.

) (Solid Friction .
.
25

. N .
F=N
f .
F N :
=F/N
0.03 0.5 0.7

. W
) (
: s
)( .
)(
s = tan

.
.
.
.
.
. 2 3 ) (Blau ) (Budinski
.
) (2 .
26
2 ) (
)
(3 . .
27

. .
.

) ( . .
: .
: ( ) ( ( ) ( ( )
( (1 (2 (3
: .
:
.
28
.
.
29
.
- .

.
-
. .
) .(1.1
30
1.1
:
:
.1
.
)
.

FCC HCP BCC
.
.
.
.

.
Surface Phenomena in Fusion Welding Processes
31
.

.

. S
1
.

2

.
1 2 .

.
.
.

) (Dupre Equation .

A B A B.
A-B A B.
.
B A A-B .
.
32

.
.

.

l-g
sol-l -
sol-g
.
.
) (Dupre .

) (cohesion .
kp = WA WK
.
) (2.1 .

.
.
cos </2
. WA l-g )
( .
. .

) (cohesion .
33
-2.1 ) :( )( :
) (A ) (B .

. .
MBE
. ) ( )
( .
CVD

.
.

.
.
)(Plating
)(CVD
1
)(PECVD
) (PVD .

Plasma enhanced CVD (PECVD
34

)(MBE
.
.1 CVD
.a
.2 PVD
.a HVOF
.b
.c )(
.d )(APVD
.e )(EBPVD
.f )(PS
.g )(LPPS
.3
.a
.b
.c
.d
.e
.f
.g
.h
.i )(IBAD
.j )(IBED
.k
.l
.m )(MBE
.n
.o
.p
.q -
.r
) (EB-PVD .
35
) :(1
.1
.2
.3
. :
)
( .
CVD 800 1200 .
) ( 5-10 pm/hr .
CVD : ) . 1000
( ) (...
. ) .
(1000 /min .
CVD PVD . PVD
)
(
.
PVD . PVD 600
1000 .
Sputtering .
) ( .
,CVD PVD . ) PVD
(EB-PVD .

.

d/dc .
d/dc < 0 . >
0 .
) (d/dc>0 > 0 .
2.15
> 0 < 0
.
36
. max
.

M

f
. .

No

.
.
.
. 1-10 eV 5
m . 4 5
, . .
) (5 m .
EB-PVD
) ,(EB-PVD CVD PVD
. EB-PVD

.
EB-PVD .
. 45 kW
. ) (PVD
. ) (
.

.
. .

37
.
.
.
RF

.
0 (.
.
.

.
.
.
.
.
.
.
.
RF - . RF
RF
. .
.

1 .
.
)Ion-Beam Sputtering (IBS
38
.
.

1
. .
SiNx
SiOx .
. 2
.
)(
3
.
.
) (~2*10-6 % .
.
)(
.
.
.

.
y=v x=u z=w . FCC
y=0 x=0 z=0 ) (0,0,0 .
) (0,0,1) (0,1,0) (1,0,0 . Si
) (0,0,0 ) (1/4,1/4,1/4 .
FCC - Si
.
3-1 ) (
. ) (u1, v1, w1 ) (u2, v2, w2
) (u1-u2, v1-v2, w1-w2 .
1
Reactive Sputtering
)Ion-Assisted Deposition (IAD
3
)Secondary Ion Mass Spectroscopy (SIMS
2
39
[]
.[hkl]
. ] [h1k1l1 ] [h2k2l2
) (dot product .
)(1.1

-1 ) (hkl ] [hkl.
-2 ) (hkl = / + + ao .
) :3 -1( ) ( ) (
.
[111] - ] [111 ] [111 .
1 -1.

1
3
)(1)(1) + 1(1) + (1)(1
(1) + (1) + 1
1 + 1 + 1
= 109.5
(111) - .
) (110 ) (110 . ) (dot product
.
X-
X -
X - . X -
40
() .

=2
)(1-2
. n .
.
X - .

. .
X- .
X - .
TEM . TEM
.
) (Epitaxy .
.

.
.
) ( ) (CVD
.
.

.
.

. .

.
. Ef
.

. f
T
41
)(1-3
= exp(
. kB Ef
1 eV/atom 1000 K.
= 10
.
)( .
.
.
: 1 eV/atom
1000 K .
.
.
6 -1 .
) -6 -1( )(

.

b .
.
)( .
)(
. ) (r 1/r
.
.
.
42
.
.

.
.
.

.
.
) 1.7( -
)( - b/db.

. .
. 1012 1
.
.
.

. .
. .

.
.
. 0.01 1.0
100 .
43
. lg
6a/lg a . lg = 1000 1 100
.

.

. N ) (g ) (s Eb
.
NAg NAs + Eb
)(4-1
Eb .
. ) 8 -1(
.
.

.
.
.
.
(ao) .
.
. .

.
) :8 -1( )(
) V(r r
44
8 -1 V(r)
) r 8 -1( .
.

.
r = ao . Eb .
) (elastic stiffness .
ao )( ) (parabolic .
.
1
2
=) (
( )/
Ks ) ( .
Ks Ks . F
.

) (E . ) V(r
.
. ) V(r .
V(r)-r
. ) 1.8(
.
. )(
.
.
. ) (F=-dV(r)/dr
. ) V(r ) F(r
r ) V(r r . -
)(
.

. :
45
. )(
.
-
.

.
.

)(
)( .
) (SiO2 . MgF2 ZnS
YBa2Cu3O7 Al2O3 .
In2O3-SnO2

.
. Si
Ge III-V GaAS InP .
.

.
- .

.
. .
.

) (SiO2 .
.
46

.
.

.

. .

.
.
.
.
CVD
Y2O3 .
.
G = -59.4 kcal/mol 1000 K ) (Keq logKeq = +13.
.
. ) (YBr3 ) (YI3
) (YCl3 G . -
G

G = -59.4 + (46.7) = + 80.7 kcal/mol .
) (YBr3 ) (Br3 ) (YCl3
) (Cl G .
G = -27 kcal/mol
47
G 2 atm
YBr3 10 -2 atm . .

)(
. ) TiC TiN (Al2O3
.

NA
k
R
q
me
o
h
h
-1
-2
-3
-4
1 = 10-8 cm = 10-1 nm
6.0221023
particles/mole
23
1.3810J/K
-5
8.61710
eV/K
1.987
cal/mole K
-19
1.60210
coulomb
-28
9.1110
g
8.8510-14
F/cm
6.62610-34 Joule-sec
2.9981010
cm/sec
FCC ) (100 FCC .

] [100 63.4 .

) (Au FCC ) (W BCC
19.3g/cm3 197.0 183.9.
.a
.b
X = 1.5406 ) ( AlAs
GaAs . ) (111
. ao(AlAs) = 5.6611 ao(GaAs) = 5.6537 .

.
48
( )= / +
B A r .
.a ao B A r .
.b .
=
-5
-6
-7
-8
) (
.

) 8-1( 9 -1
. 8-1 Eg

)( - p-n 10-1 .
-
)( -
)( -

)( - 10-1
) (Al ) (Pb -
. BaO Y2O3 Cu2O
Ho(Y2O3) = -455 kcal/mol
Ho(BaO) = -132 kcal/mol Ho(Cu2O) = -40.8 kcal/mol .

%80 ) %20 -(Ga ) (As 1200 C 0 C
.
.a 30C 200C 600C 1000C 1200C
29C .
.
.b .
.
.c %80 ) %20 -(As ) (Ga
800C 1000C 600C .
. ][AA
.1 )(Vacuum evaporation
.2 )(Glow discharge sputtering
49

.

.
] .[BB )
( ].[AA

.
].[AA
.1 .
.2 .
.3 .
) ( .
.

)( ] .[BB
] .[BB -
- .
] . [BB
] .[BB
- -
].[BB
/
) (2-1 )(4
T N .
dN v v+dv . vm ) (2-1 ) (2

=) (
)(5

M .
va (root-mean-square speed) vr vm
.
cm/s
)(6
cm/s
= 1.289 10
v = 1.455 10
50
= v
= v
)(7
.
.
M=29 ) 25 C (298 K .
va)air = 0.47 km/s = 0.29 mile/s = 1040 miles/hr
%30 .

.
.
) (gas diffusion.
) f(v n
v v+dv ) (M ) (T ] .[BB
R ] .[BB 2-1
2-1 .
) f(v = 0
df(v)/dv .
= v
:2-1 H2 vy vx vz
) ( .
.
2-2
y z .
. ) (vm
) ( ) (2 .
51
2 -1 .
.
.
1
3
Mv = RT
2
2
RT .
. Pa
10 -2
10-5 Pa .
10 -7 Pa 10 -9 Pa . 3.1
.
:3.1

. c
M P n V
T .

52

k
) k=R/NA R (
NA
: v
.
.
.

. .
. .
r

. .
)(3.7

.
A
) (
=
.

510-4 Pa
. 1
. 10-8 -10-9 Pa
.
3.2 .
53
.
.
UHV
.
:3.2
.
.1 ) (outgas
.
.2
.
.
.

) (outgassing .
3.3 .
54
:3.3
.

.
.
.
600 K .
interrogate
. ) AISI (304
) (Invar

.
.

) (graded .

.
.
.
.
.

.
.
400K 500K
. 10-6 Pa
.
) 10 -5 Pa (10-2
.

. ) (TEM )(SEM
.

.
. ) (Outgassing . O
55
) (Viton . O
)(
.
) 10-9 Pa (10-6

) (LEED (XPS) X -
) (AES ) (SIMS ) (FIM .
.
304 )(
500 K .
-O -O
) (Viton .
) (3.4 .
:3.4
)( - )( - O
UHV
) ) 3.4(( .
V .
)(Leak detection

.
.
) ) 3.18( .
.
) 3.18
56
)( .
) ) 3.18( .
) (18 amu ( 2 amu) H2 (28 amu) CO
) (18 amu ) (28 amu O2/N2 1:4
. CO )(amu
.
:3.18 )( ) ( )) (outgassing(
.
.
.

.
.
)(4 amu
.
.
) (outgas .

. )(
.
- .
) (Oven .

.
.
57
][BB

.
.
.
].[BB

].[AA
PV = NkT
)(1

P

V

N
-16
k = 1.380510 erg/K
k
(K = C + 273.16) K
T
) (Real
) (1 .
) (1
.
) (1 .
)(2

Ro
) M M ( .
nM

.
NA = 6.0231023 molecule/mole.
0 C (1 torr = 1 mmHg) 760 torr 22.415 lit . )(1
) (2.
= cte = n R = n R
.
)(
N
N
= nk
n =n R
58
N
)R
N
j
. mole
k
( = nk
R = N k = 8.31
cm
. mole
k
atm
= 0.08206 lit.
. mole
k
= 82.06 atm.
1 ) n ( .
)(3
P torr n ) (cm ) (3

=
P
T
=n
n = 9.656 10
. 25 C 10 -8 torr
.
molecule/cm
) (9.656 10 ) (10
= 3.24 10
298.16
=n
) (Mean Free Path

.
.

L .
L=v
)(

. ) (
.
)(7
L = 2nd

) (
do
) 7( .
)(8
P torr.
cm
)(
=L
Z (
59
)(
5 3 6 .
/
=Z
)(9
) (P torr .
=P
/
)(10

.
.
Z = 3.51 10 P

. ) (inlet pressure
) (delivery pressure .
.

. torr
0.01 76000 .
.

.
(1 torr = 1 mmHg) torr kPa .

. %85 -85 kPa.
) (PV
. PV
torr litre : ) micron litre (mHg .
SI - ) (Newton-metres )(1 torr litre = 0.1333 Nm
.

)(torr.litre/s
)lusec (micron.litre/s
) clusec (0.01 lusec 0.01 )(0.01 lusec
SI Nm/s
.
60

dyne/cm2
dyne/cm2
microbar
bar
mmHg
mmHg = 760 torr
mmHg
1
106
10
1.01325
1
760
750.06
=
=
=
=
=
=
=
microbar
bar
Newton/m2
atm
torr
atm
bar
1
1
1
1
1
1
1
) (Rotary Oil Pumps

10-3 torr . .

-3
) (Roots Blower Pumps 10 torr 10 torr

)( .
) :(Sorption Pump )(Molecular Sieve
.
.
) ( -196 C .

Q .
) (Conductance :
)(

C

P1

P2
1/C . C ) (lit/sec .
.
: A . B .
61
P1
P2
P2
P3
)(
)(
)(
C . .
)(
)(
)(
)(
.

) (10-2 torr
.1
.2 )(getter and ion pumps
.3
)(Gauges
.

.1 )(Burden tube
.2
.3
.4 )(Therionic
1 250 torr 510-3 torr.

62
) (outgassing)
(.
) (Permeability ) (
.
O
-O .
.
.
: ) (
) (Bulk
.
.

.a
.b
.c )(
) (CVD
) (
. CVD .
.
.

.
CVD ) (Throwing Power
.
) (line-of-sight .
)(PVD
PVD ) (Evaporation ) (Sputtering

) (Ion Plating .
63
PVD
.
)(Reactive Ion Plating
)(Activated Reactive Evaporation=ARE
)(Activated Reactive Sputtering

.
. ARE
) (Reactive Ion Plating.
RF
) (Gasless Ion Plating.

) ( ) ( )
CVD .
CVD
.
CVD 2-6 .
.1
.2
.3
.4 ) (
.5
.6
.7
64
:2-6 CVD
6-3

.
-6-3 CVD
.1 ) (
) (hydrides ) (carbonyls
) (organometallics .
) (Silane
.
) (Mond Procedd
) (Ni .
65
.2

- .
) (SiCl4 ) (Si Si ) (Epitaxial
.
) (W ) (Mo
.

. ) (WF6
) (W
) (SiF4 .
.
.3
) (SiO2 6-6
.
6 -7 . ) (SiO2
) (8-6.
.
) (SiO2 1000
.
.
. SiCl4
.
.4
CVD
.
66
.
:
.
SiC 1909 SiCl4+C6H6 .
SiHCl3+CCl4 SiCl4+C6H14 SiBr4+C2H4 SiCl4+C3H8
SiCl4+C6H5CH3 )
(CH3)2SiCl2 CH3SiH3 CH3SiCl3 . SiC
.
Si3N4 . 750 C .
:1 : .

:2
.
)(line-of-sight
) ) (Collisions (
)

) (.
:3 :
.
)(
.
.5
) (Disproportionation
.
) (valance GeI4 GeI2
.
- .
67
.
.
.6

.
) (Epitaxial ) (GaAs .
CVD
CVD .
.

.
.
.
-
.
.

. CVD .
G G
CVD .
.
.
Gv
.

) (CVD
. .
68
) (EB-PVD .

.
.

PVD .
PVD 600 -1000 C .
) (Sputtering .
) (
. CVD PVD . ) PVD (EB-PVD
.
) (Unbalanced (DC) Magnertorn Sputtering
.
, .
.
.
.
. .
) (5 m .
EB-PVD
) ,(EB-PVD PVD CVD

.
EB-PVD
.
EB-PVD
.
) ( PVD .
) (
.
.

.
69
.
.
.
PVD CVD .
.1 CVD
.2 )( ) (
.
.3 .
.4 ) PVD(

) (Hertz
) (Knudsen ) (Langmuir .

.1 .
.2 Pe Ph
.
.

.

)(3-1

) ( .
e
0 1.
e
e = 1 Ph .
Molecules/cm2.s
= 3.513 1022
(MT)1/2
P torr e
)(3-2
Pe
3.5131022
(MT)1/2
Pe torr .
)(3-3
e .
10 -2 torr e
10-4 .
.
g/cm2.s
) ( = 5.85 10
70
- . -
- .
)(3-4
H(T) V ) (V

) (c T . =
.

= / 3 -4 .
) (
)(5-3
H(T)=He ) (
.
) (
) I (Po=expI . Hv He
T 1 P I - .
3.6 .
.
) H(T .
Al .
log P 1/T
.
- 3.1
. -
3.2 .
71
:1 -3 .
:3.2 ) (
72

.1
.2
-3
10
. ) (Cr)(Ti
) (Mo) (Fe ) (Si
.
500C 10 -2 torr.
) (Ti ) (Ti .
) (Replica
.
.

.
.
.
. .

) (Reactive evaporation .
3 -1

.
73
Al-Cu ) Permalloy (Fe-Ni ) Nichrome (Ni-Cr Co-Cr .

.
.
B-B A-A A-B .
.
B B )) (PB(0 XB
.
)PB = XBPB(0
)(3-8

B .
B .
.
)PB = BPB(0
)(3-9

B .
B
B XB
B = BXB
)(3-10
3.9 3.2 3.10 A B
.
)(3-11
) /
) /
XA+XB = 1
. .

.
3-11 Al-Cu
%2 ) (Cu 1350 K
. .
98
2
3-1.
Cu = Al .
)(0
10
=
(0) 2 10
98(2 10 )(63.7) /
=
= 15
2 (10 )(27.0) /
74
%2 - ) (2wt%Cu-Al 15:1
. ) (Al 13.6
.
.
)(
.
.
.

. .
.
.1

.2 .

. .
A1-YBY
) (cm3/sec
. = 1
) (1
3.11
B ) XS(B
.
) /
)(3-12
) /
() (
() (
( )= 1+
)) (XB/XS(B B .
) (
. V/dXB/dt
) (cm /atom V ) (cm .

.
)(3-13
) (
75
t=0 XB = Y .

)(3-14
) (
= exp(
) (
) (
.
.
XB Y .
.
.1
.2 .
- .
. ) (dAe
Ac .

)(3-15
: )( - )(

dAC
.
dA dt
dAs . )( dAS
dAc = dAscos
.
)(3 -16
76

.
= 0 cos = 1.

.
. 1 % .
)( . d
. .
dA
=d
: 3.6
) (3 -16.
)(3-19
) /
) = ( + . ) (do l =0
cos=cos=h/r . )(
77
3.20 3.22 3.6 .

.
.
:3 -7
D/hr
-3.8
- .
: 150 cm 3-7
. ) (tolerance 10%

78
: ) (3-22 -7
3 r D
. r/hv D/hv .
)( d/do 0.9 1.1 D/hv = 0.6
r/hv = 0.87 . r = 150/2 = 75 cm hv = 75/0.87 = 86.2 cm .
2D = 20.686.2 = 103.4 cm .
hv .
- .
: 1% .

.

R = 20cm ) (offset . 25 cm

: - -8
3 . hv/R = 1.33 r/R = 0.6
-0.6 %+0.5 .
hv = 1.3320 = 26.6 cm
.

) .(3 -9
= cos=cos=r/2ro . 3-17 .
79
. ro

.1
.2
.3
)(
.
)
) ( )
(

.
.
.
) -1( - Si Ga .
)( -
.
80
-2 ) (Fe 1 cm2 1550 C

100 C
.
.
-3 ) (molecular-beam epitaxy
) Al (effusion As 4 cm2 10 cm ) GaAs (100 .
1000 C As 100 C .
AlAs /s AlAs : ) (5.661
GaAs .
-4 1000 W 120 V .
20cm 0.75 mm ) (T
.
-5 61.5 kW-h/kg .
100 -mm
.
) (Zr 30 W/K-m 1 cm.
) (
) (
. ) (Work Function .
. q) q
( .
3.51.5 V . ) (Charged double layer .
.

.

.

.
.
81
) (physisorption Ep
) (chemisorption Ec
.
.
.
. ) (sorption
.
Ep 0.25 ev

Ec 1 - 10 ev

P C
.

.
r = rp

r = rc

Ep Ec )( Edis .
) (Edis Ec .
) (
Ea .
) (composite ) (desorption energy = Edes
.
) (Eads Ep Ec .

82
) (
P . ) (
t .
)(7.3
) 0 ( ) 1 ( .

. kads
.
(1 )
7.3.
)(7.4

K
}] )
(1 +
{1 exp[
1+
1+
) (Langmuir Isotherm . KP1

1.

.1
.2
.3 E
.4 Ts
.5
.6
.7
.8
.9

.
83

. .
) (.
(1 ) -(
(2 ) - (
(3 -
.
: ).(Monolayer=ML
- ) (Wolmer-Weber
.
) ( .
.
.
.
.
.
.
.
.
- ) (SK
.
. S-K -
- .

r .
84
a1r2 a2r2
a3r2 ai
) (Dissociation
.
c-v
s-c .
s-v .
a2r2s-v .
) (Isotropic .

.
:
* G .
* r .
G .
Gv .
85
PV = kT .
Gv G/ ) (adatom
S = P/Pe . .
.
S P Pe )( Ts
. Ts .
: 1000 ergs/cm2 300 K 2104

r* = 0.5 nm
) (FIM
) (TEM .

.
.
.
.
) (Gv
) (Gs .
.
Gs * G
.
.
.
) 9.1( ) 9.1( .
.
- -
86
.
. 10 1000

.
:1-9 )( - - )( -

.
.
- (Structure Zone Diagram) SZD
. .

.
. .
.1 )(shadowing
.2 )(surface diffusion
.3 )(bulk diffusion
.4 )(desorption

TM .
- ) (Sol-gel
) (SiO2
.
SiO2 TiO2 .
-
87
-

.
500C . 1 m .
. .

.

.

.

.

.
.

) (
)(
)(CVD
) (
.
.
.

.
) (Particulate
) (sintering .
88
-
-
.
- .
- :
.1
.
.2 .
.
.3 .
.4
.
-
- :
.1
.

. pH
.
.2
.
. OR
Si-OH .
Si-O-Si
. .
.
) (Conglomerate
. .
. .
:
)(
89
1 100 .

.
.
.
) (pH .
.
.
.
.
.
.

.

- .
.
.
.
. 10
20 50 .
/ .
. .
.
.
.
1200
1700 .
.
90
.
M(OR)n M R . n .
)) (R(OH )) (M(OH .
.
. :
:
M (OR ) n H 2O M (OH ) n nROH
n
M (OH ) n MO( n / 2) ( ) H 2O
2
pH
. .
.
-
.
.
1 2 (CVD) 3 .

.
- .
. )
( . -
. - TiO2
-
.
- TiO2
- .
- .

.
.
. .
1
Evaporation
Sputtering
3
Chemical Vapor Deposition
2
91
PVD
.
- .

.

) (diping ) (spinning ) (spraying
.
- .
:
.1
.2 )
( Aerogel
.3
Xerogel
Reflective optics
1/00
.
.
) ( .
(TMOS) 1
. .
- V
. .
)Tetramethylorthosilicate (TMOS
92
: -

.

- CVD -
. 1 - CVD ..
- ) (M(OR)z .
R ) (CxH2x+1 .
Metal Alkoxides
_ Metal b-Diketonates
http://www.chemat.com/4.tpl?cart=107855847910361
93
Metal Dialkylamides
Metal Carboxylates
_ Metal Organo-polymers

.

.
M(OR)z + H2OM(OR)z-1(OH) + ROH
M-O-R
.
.
Si(OR)3OH + Si(OR)4(RO)3Si-O-Si(OR)3 + ROH
2Si(OR)3OH(RO)3Si-O-Si(OR)3 + H2O
. R .
R .
-
.
-

- .
.
. .
)(
) ( Spin coating ) (
. 1
) (Anti-reflection ) (Anti-glare .
.

. .
:
)Cathode Ray Tube (CRT
94
TP 6000 gyrset .
Sulzer Electro technique

5000 100
100 1000 100
1 999

:
:

.
1
t coating
.
.
) (PVD
) ( . PVD
. PVD

) (

.
. .
DC 10 .
.
95
.
)( .
.
N :
:
a ion ex el oth
) (Excitation ) (Ionization ) (Attachment
.
.
:
.

. .
96
) (t el
) (15.75 eV )(t ion
.

.

.

E
Wf

e

E
E

. .

me
)(Heavy
mH

We
WH
W Wf
.
.
1 eV = 1.60210-19 joule
: 1 torr 300 K 1 V/cm
. 3.21016 cm-3 1 eV/cm el 10 -15 cm2.

97
.
.
) (
) (Bulk
.
. .

. )(Plasmon
.

. .

.
.
.
.

.
.
low Discharge
Arc Discharge

Corona Discharge

.
98

)( Vs .

P

l
a b
.
Vs ) (Paschens Law ) (.
: ) 5 mm
Pm . Pm
.
l Ps .
o ) (
Pc . .
Pc .
99
: ) Pc (cm-1.torr-1
Pc = 20 cm-1.torr-1 100 eV o 0.05 cm .

l = 10 cm Ps 5 mm .
5 militorr ) (6.510-1 Pa .
DC
)
(.
:
0.1 mA/cm2 .
. ) (Avalanche
100
.
.
)(Townsend discharge
) (Townsend discharge
) (John Sealy Townsen .
) (Avalanche
. 10-19 10-5 A .
) (Dark Discharge
) (Glow Discharge ) (Arc Discharge .

.
.
I .

I

I0
) (
e

n

d
.
0.1 mA/cm2 .
.
.
.
.
.
0.1 mA/cm2
. ) (Arc Discharge.

.1 .
.2 .
.3 .
101
.4
.
.5 .
.6
.
.7
.
.8
.
9
10- A
) (self-sustained ) (.
-9
10 A .
.
m m
.

) (.
)(

ne
.

)n = exp(l
= )(
) (Multiplication Coefficient m .
]m = [exp(l) 1
)(

=
.
)(
l = ln 1 + 1
.
102

E

P
A B
.
E=Vs/l .
A B .
: Vi A B
)
(.
103
:
Vc ) (Cathode fall .
)(Crookes dark space . d
. .
V(x) .
) V(x .
d = x ) V(x Vc V(x) ) E(x .

) (Poissons Relationship .
.
104

) (.
:
B
. m e v .

.
.
:
B E )
( :
EB E/B ) (.

10-5 torr ) (.
105

. Bc
" ) (Cutoff field .
Bc .
. Bc .

Vc
r2 r1

l
Bc
.
.
.
Pe .

106

1 torr
o

B
e/m

Vo
-5
. : ) Vo=100 V p=110 torr (Ar) B=100G (0.01 T o=0.05 cm .:
=5103 Pe=0.05 torr .
.
:

.
.
:
.
107

.
x .
) (m ) (M .
.
E t .
m<<M .

.
Te>>Ti>>Tg Ti Te Tg
.
.
. Te ~Tg
. 10 -4 .
) (Plasma-assisted .
:
108

.1
.2
.3
.4 )(
.
) (Compound .
2.5cm 10cm . 15cm 30cm
.

. ) (Yield
(sn, an) ... (s3, a3) (s2, a2) (s1, a1)
) snan(Mn/Na) ... s3a3(M3/Na) s2a2(M2/Na) s1a1(M1/Na . ... M3 M2 M1 :
Mn Na .
.
:

) 4N (6N .
. .
109
) (Reactive
) (Reactive Sputtering .

:
.1
.2
.3
)(
.
)(
.1
.a
.b /
110
.2
.3
.4
.5

.a
.b
.c

.
)(

. )( .
:
)( ) (Mo ) (W
. -
.
111
:
) (
. .
Ip I+ .
Ip .

A

e

N+

T+

M

k
Ip ) (I .
Vs
. .

) .(II
I .
112

N

T
m
.
Vp
Vp = Vs Ip I.
Vp > Vs I- ) (III.
Ip III Vs II III
.
) (IR
.
) (Emissivity .
) (Reflectance
=1-

.1
.2
.3
.4
113

) (.
: - ) (Helium-Neon
.
. .
) (Semitransparent ) (IR
.

.
) (epitaxial RHEED1 .

.
.
. )(N2, H2, O2
) (He, Ar
.
. ) (Al2O3
1300 C .

.
:
o / )(Ar/H2
1 RHEED= Reflection High-Energy Electron Diffraction
114
o / )(Ar/He
o / )(Ar/N2
o / )(N2/H2
.
: / /

: ) (N2/H2

: ) (Ar/H2
: . :
o
o
o
o
CVD

CVD .
CVD
G G . .

.

115
zi
R
T
i ) CVD
(.
i T 1

i 1 pi=xiPT.
ai
i
pi
i
xi

PT

.
K
CVD
- 1 )(
.
.

116
CVD .
.
)(Coreduction
.
.
.

CVD .
CO2 . SiO2 .
.
.
)(
.
) (
.
.
CVD
CVD

CVD
CVD .

117

CVD/PVD 10 .
CVD
CVD
)(

CVD . .
CVD :
CVD ) ( CVD
CVD 800-2000 C :

) (

CVD
.
.1
.2

118
)
(.

CVD
)(
MBE
PVD
.
CVD
CVD .
] [Ni(CO)4 ) (B2H6 ) (AsH3 ) (PH3 .
) (SiH4 .
.
119

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0.03 0.5 0.7