Department of Electrical and Computer Engineering

EE 3161 Fall 2016

Prof. Swisher
Homework #2
Due in class (or via Moodle) by 12:30pm Thursday September 29th, 2016
Problem 1
(a) For an electron mobility of 650 cm2/Vsec, calculate the time between collisions. (Use mn* =
m0 in these calculations).
(b) For an electric field 100V/cm, calculate the distance an electron travels by drift between
collisions.
Solution:
(a) The mean free time between collisions is found by using the equation from the lecture
notes (and on page 79 of Pierret):
"
" "
" =
" =

"

where n = 650 cm2/Vsec (= 0.065 m2/Vsec) and mn* is assumed to be equal to m0. Thus,
tn = (0.065 m2/Vsec)*(9.11x10-31 kg)/(1.60x10-19 coul) = 3.70 x 10-13 sec
Note: to see that the units do work out to seconds, convert everything to MKS units. The
following conversions are often helpful to remember:

=

=
=


(b) First find the drift velocity:
7 = " = (650 cm2/Vsec)*(100 V/cm) = 65,000 cm/sec
The distance travelled by drift between collisions is
= 7 " = (6.5x104 cm/sec)*(3.70x10-13 sec) = 2.41x10-8 cm = 0.241 nm

Problem 2
A block of silicon at T=300K has two different doped regions as shown below. The two regions
are connected in parallel. Assume that there is no interaction between the regions (i.e., that the
boundary is abrupt). Calculate the resistance of the block given the following doping conditions.
(a) Region I: Na = 2 x 1016 cm-3 B
Region II: intrinsic (Na = 0, Nd = 0)
(b) Region I: Na = 2 x 1016 cm-3 B
Region II: Nd = 5 x 1016 cm-3 As
(c) Region I: Na = 8 x 1016 cm-3 B and Nd = 2 x 1016 cm-3 As
Region II: Na = 9 x 1016 cm-3 B and Nd = 1 x 1017 cm-3 As
(Exercise caution in choosing the mobility values to be employed in this part of the
problem.)

Solution:
For each part of this problem, you will need to look up the mobility for electrons and/or holes for
Region 1 and Region 2 at the given dopant concentration using Figure 3.5 on page 80 of your
text book.
(a) Region I:
1
1
; =

("; ; + @; ; ) @; ;
; E = 210;I JK so @; = 419 - /
1
1
;
=
= 0.746
-;R
@; ;
1.6010
419*210;I
; =

;
0.4
0.746 *
= 149.2

0.1*0.02

Region II:

1
("- - + @- - )
- - Y = 10;Z JK since the material is intrinsic. In Figure 3.5, we can see that
the mobility values pretty much level off below doping concentrations of 1015, so we can
extrapolate and use the lowest values on the chart for the intrinsic mobility:
"- 1358 - / and @- 461 - /
1
-
= 3.4410^
1.6010-;R 1358 10;Z + 461*10;Z
- =

-
0.4
3.4410^
= 6.8810_

0.1*0.02
Calculate the total resistance of the parallel combination:
; `a`Eb =
=
; + (b) Region I: same as part (a) above
Region II:
1
1
- =

("- - + @- - ) "- - 7 = 510;I JK so "; = 986 - /

1
1
;
=
= 0.127
-;R
"- 1.6010
986*510;I
- =

;
0.4
0.127 *
= 25.35

0.1*0.02
; `a`Eb =
= .
; + (c) Each region has both acceptors and donors with concentrations that are on the same order
of magnitude, so we use the general equation to calculate n and p:
Region I:
; =

ij Jik
-

ij Jik -

+ Y- E 7 when Na and Nd are on the same order of

magnitude and both much greater than ni (Na > Nd >> ni). So:
810;I 210;I = 610;I JK
Y10-Z
=
=
= 1667 JK

610;I
Since ionized donors and acceptors will both scatter the electrons and holes, we have to
use the total dopant concentration to find the mobility from Figure 3.5. In other words,
whenever you use Figure 3.5, think of the x-axis as the total concentration of ionized
impurity sites!
E + 7 = 110;_ JK
So: " 801 - / and @ 331 - /
1
; =
= 0.315
1.6010-;R 801 1667 + 331*610;I
;
0.4
; =
0.315 *
= 62.94

0.1*0.02

Region II:
7 E = 110;_ 910;I = 110;I JK
Y10-Z
=
=
= 10m JK

110;I
E + 7 = 1.910;_ JK
So: " 630 - / and @ 270 - /
1
- =
= 0.992
1.6010-;R 630 10;I + 270*10m
-
0.4
- =
0.992 *
= 198.4

0.1*0.02
`a`Eb =

; = .
; + -

Problem 3
Pierret problem 3.12, for Figure P3.12 parts a, b, and e only

Problem 4
You are given a piece of GaAs at room temperature (T=300K). If Nd = 61017 cm-3 and Na =
51017 cm-3, draw the band diagram for the system, labeling Ef, Ec, Ev, Ei, and the energy
differences between them.
NOTE: These doping levels are actually degenerate in GaAs (as you found in Homework #1
Problem 5). That was an oversight on my part when I wrote this problem! As I pointed out via
the Moodle announcement, please solve this problem as if these doping levels were nongenerate. In other words, you can use the equations from chapter 2 even though they are only
valid for non-degenerate semiconductors.
For GaAs at room temperature (see Lecture #2 slides):
p = 1.42
Y = 210I JK
@
0.52
=
" 0.066
So:
Y =

rs tru
-

yz

y{

+ ln

;.m-

Z.^-

Z.ZII

+ ln

= 0.750 above Ev, or 0.040 eV

above midgap.
7 E = 610;_ 510;_ = 110;_ JK
Y10-Z
=
=
= 10m JK

110;I

10;_
| Y = ln
= 0.026 ln
= 0.641
Y
210I
} | = 1.42 0.750 0.641 = 0.029 = 29

Problem 5
A semiconductor at room temperature (300K) has the energy band diagrams shown below for the
equilibrium and steady state conditions before and after illumination. In this material, the
intrinsic carrier concentration is 1010 cm-3, the electron mobility is 1345 cm2/V-sec, and the hole
mobility is 458 cm2/V-sec.
(a) Determine the equilibrium carrier concentrations, n0 and p0.
(b) Determine n and p under steady state conditions.
(c) Determine ND.
(d) When the semiconductor is illuminated, do low-level injection conditions apply? Explain
your answer.
(e) What is the resistivity of the semiconductor before and after illumination?

Solution:

(a) Z = Y e = 10;Z Z.-Z Z.Z-^R = 4.7510;m JK

Y10-Z
Z =
=
= 2.1010^ JK
Z 4.7510;m

(b) = Y e

= 10;Z Z.KZZ

Z.Z-I

= 1.0310;^ JK

= Y e

= 10;Z Z.-Z

Z.Z-I

= 4.7510;m JK

"

Note that it is no longer in equilibrium when it is illuminated, so you cannot use = .

"
(c) Z = 4.7510;m JK
(d) No, LLI conditions do not apply. Low level injection requires that Dp << n0 and n @ n0.
Due to the illumination, Dp @ n0, and n differs significantly from n0.
;
(e) Before: =
{ i

= 1/[(1.60x10-19 coul) * (n =1345 cm2/Vsec) * (4.75x1014 cm-3)] = 9.78 Wcm

After:
1
1
=
=
J;R
(" + @ )
1.6010
1345 1.0310;^ + 458 4.7510;m
= .