Semiconductors Objective Questions

Q.1

Q.2

A semiconductor device is connected in a series circuit with battery and

resistance. A current is found to pass through the circuit. When polarities
of the battery are reversed the current drops to zero. The device may be:
[a] pn junction
[b]intrinsic semiconductor
[c] p type semiconductor
[d] n type semiconductor
On increasing the reverse bias to a large value in pn junction diode the
current:
[a] increases slowly
[b] remains fixed
[c] suddenly increases
[d] decreases slowly

Q.3

The electrical resistance of depletion layer is large because:

[a] it has no charge carriers
[b] it has large number of charge carriers
[c] it contains electrons as charge carriers
[d] it has holes as charge carriers

Q.4

To measure light intensity we use

[a] LED with forward bias
[b] LED with reverse bias
[c] photodiode with reverse bias
[d] photodiode with forward bias

Q.5

In forward biased pn junction the current is of the order of

[a] ampere
[b] milliampere
[c] microampere
[d] nanoampere

Q.6

When pn junction diode is reverse biased the flow of current across the
junction is mainly due to
[a] diffusion of charges
[b] depends on nature of material
[c] drift of charges
[d] both drift and diffusion of charges

Q.7

In a common emitter circuit, the collector current is 0.9mA, base

current is 100A. The value of current gain and emitter current is
[a] 49 and 2mA
[b] 9 ad 1mA
[c] 0.9 and 0.1mA
[d] none of these

Q.8

The concentration of impurities in a transistor :

[a] equal for emitter, base and collector
[b] least for emitter region

[c] largest for emitter region

[d] largest for collector region
Q.9

Application of forward bias to the pn junction

[a] increases the number of donors on n side
[b] increases electric field in depletion region
[c] increases potential difference across the depletion region
[d]widens the depletion zone

Q.10

Within depletion region of the pn junction diode

[a] p side is positive and n side is negative
[b] p side is negative and n side is +ive
[c] both sides are either positive or negative
[d] both sides are neutral

Q.11

What is the conductivity of semiconductor if electron density=

5x1012/cm3 and hole density = 8x1013/cm3[e=2.3 and h=0.01 in SI units]
[a]5.634
[b] 1.968
[c]3.421
[d] 8.964

Q.12

The electrical conductivity of semiconductor increases when an

electromagnetic radiation of wavelength 1125nm is incident on it. The
band gap of semiconductor is
[a]0.9eV
[b] 0.7eV
[c] 0.8eV
[d]0.5eV

Q.13

In common base mode of transistor, the collector current is 5.488mA,

the emitter current is 5.6mA. the value of current amplification factor is
[a] 48
[b] 49
[c] 50
[d] 51

Q.14

A semiconductor is doped with donor impurity is

[a] p type
[b] n type
[c] npn type
[d] pnp type

Q.15

IN NPN transistor, the collector current is 24mA. If 80% of the electrons

reach collector, the base current in mA is
[a] 36
[b] 26
[c] 16
[d]6

Q.16

The difference in the variation of resistance with temperature in a metal

and semiconductor arises essentially due to the difference in
[a] type of bonding
[b] crystal structure
[c]scattering mechanism with temperature
[d]number of charge carriers with temperature

Q.17

barrier potential of pn junction does not depend on

[a] temperature
[b] forward bias
[c] reverse bias
[d] diode design

Q.18

One serious drawback of semiconductors is

[a] they are costly
[b] they pollute the environment
[c] they do not last for long time
[d] they cant withstand high voltage

Q.19

Resistance of semiconductor
[a] increases with temperature
[b] decreases with temperature
[c] remains unaffected with temperature
[d] none of these

Q.20

Q.21

The dominant mechanism for motion of charge carriers in forward and

reverse biased silicon pn junction are
[a] drift in both forward and reverse bias
[b]diffusion in both forward and reverse
[c] diffusion in forward and drift in reverse
[d] drift in forward and diffusion in reverse
When NPN transistors is used as amplifier
[a] electrons move from base to emitter
[b] electrons move from emitter to base
[c] electrons move from collector to base
[d] holes move from base to emitter

Q.22

In a transistor circuit base current is increased by 50A keeping the

collector voltage fixed at 2 volts, the collector current increases by 1mA.
The current gain of the transistor is
[a] 20
[b] 40
[c] 60
[d] 80

Q.23

A common emitter transistor

load voltage is 4k and input
amplifier is
[a]160
[c] 300

Q.24

amplifier has a current gain of 50. if the

resistance is 500, the voltage gain in
[b] 200
[d] 400

Which gate corresponds to action of parallel switches

[a] OR gate
[b] AND
[c] NOR
[d]NAND

Q.25

Which gate is similar to function of two series switches

[a] AND
[b] OR
[c] NAND
[d] NOR

Q.26

The electrical conductivity of the semiconductor increases when em

radiation of wavelength shorter than 2480nm is incident on it. The band
gap of the semiconductor in eV is
[a] 0.9
[b] 0.7
[c] 0.5
[d] 0.1

Q.27

If the forward voltage of semiconductor is doubled, the width of

depletion layer will;
[a] become half
[b] becomes 1/4th
[c] remain unchanged
[d] becomes double

Q.28

A sinusoidal voltage of peak value 200V is connected to diode and

resistance in series so that half wave rectification occurs. If forward
resistance of the diode is negligible, the rms voltage across resistance is
[a] 200
[b] 100
[c] 1002
[d] 283

Q.29

A common emitter amplifier is designed with npn transistor with

=0.99. the input impedance is 1 Kilo ohm and load is 10kiloohm. The
voltage gain will be
[a]9.9
[b]99
[c]990
[d]9900

Q.30

The main cause of Zener breakdown is

[a]high doping
[b]low doping
[c]collision ionization
[d]production of electron hole pair due to thermal excitation

Q.31

In binary number system, 11000101 represents which number on

decimal system
[a] 4
[b] 401
[c] 197
[d] 204
Q.32 For common base transistor the numerical value is least for
[a] voltage gain
[b] power gain
[c] resistance gain
[d] current gain
Q.33

In a common emitter amplifier output resistance is 5000 ohm and input

resistance is 2000 ohm. If the peak value of signal voltage is 10mV
and =50, the peak value of voltage output is
[a] 5x10-6V
[b]2.5x10-4V
[c]1.25V
[d]125V

Q.34

What is the value of the voltage gain in the common emitter amplifier,
where input resistance is 3 ohm and load resistance is 24 ohm. Take =0.6
[a]8.4
[b]4.8
[c]2.4
[d]1.2

Q.35

If R1 is the input resistance and R2 is the output resistance of the

voltage gain A in the common emitter configuration is
[a] [R2/R1]
[b] [R2/R1]
[c]
[d]

Q.36

A non conducting device is connected in a series circuit with battery

and resistance. A current is found to pass through the circuit. If the
polarity of the battery is reversed, the current drops to almost zero. The
device may be
[a] p n junction diode
[b] an intrinsic semiconductor
[c] a p type semiconductor
[d] an n type semiconductor

Q.37

the temperature coefficient of resistance of the semiconductor

is
[a] positive always
[c] zero

[b] negative always

[d] infinite

Q.38

in a p type semiconductor, the acceptor valence band is

[a]above the conduction band of the host crystal
[b] below the conduction band of the crystal
[c] above the valence band of the crystal
[d] below the valence band of the crystal

Q.39

The forbidden energy gap in an insular is

[a] > 6eV
[b] < 6eV
[c]1 eV
[d]4 eV

Q.40

In common base transistor amplifier, the phase difference between

output voltage and input voltage is
[a] zero
[b]1800
[c] 900
[d] 450

Q.41

Transistors may not replace vacuum tubes in all uses because

[a] because transistors requires long warm ups than the vacuum tubes
[b] vacuum tubes are more resistant in shocks and vibrations than
transistors
[c] vacuum tubes can handle greater power than transistors
[d] transistors use high voltages

Q.42

Q.43

The base is made thin and lightly doped because

[a] about 95% of the charge carriers may cross
[b] about 100% of the charge carriers may cross
[c] the transistors can be saved from large currents
[d] none of these
The current gain of common base npn transistor is 0.96. what is the
current gain if it is used as common emitter amplifier?
[a]16
[b] 24
[c] 20
[d] 32

Q.44

In forward biased pn junction diode, the collector current is of the order

of
[a] microampere
[c] ampere

Q.45

[b] milliampere
[d] nanoampere

The temperature coefficient of the resistance of semiconductors is

always
[a] positive
[b] negative
[c] zero
[d] infinite

Q.40

In an insulator, the number of electrons in the valence shell in general

is
[a] less than 4
[c] equal to 4

[b] more than 4

[d] none of these

CONCEPTUAL QUESTIONS

Q.1

The resistance of the pn junction is low when forward

biased and is high when it is reverse biased. Explain.

A.1

The resistance of pn junction is low when it is

forward biased because force acts on charge carriers to
move them across the junction whereas the force in
reverse biasing acts in opposite direction which opposes
the motion of charge carriers across the junction.

Q.2

How will you test whether a transistor is spoiled or in

working order?

A.2

a working transistor has low resistance when it is

forward biased whereas it has high resistance when it is

reverse biased. But if the transistor is spoiled the

resistance is low for both forward and reverse biasing.
Q.3

Would you prefer to use a transistor as common base

or common emitter configuration.

A.3

We prefer to use the common emitter configuration

of the transistor because the current gain is more in
that configuration

Q.4

What is the function of grid in a triode valve?

A.4

The grid in triode valves helps us to control the

current in the triode valve more effectively because it
lies closer to the cathode

Q.5

How will you compare a transistor with a triode?

A.5

In transistor the electron and hole move from emitter

to collector whereas in cathode electrons emitted by the
cathode are received by the plate. In transistor flow of
current is controlled by base whereas in triode it is done
by the grid.

Q.6

What is the difference between the transistor as

amplifier and the step up transformer?

A.6

The difference between the transistor as an amplifier

and the transformer is that in the transistor increase in
voltage does not imply the decrease in current whereas
in transformer if the magnitude of the voltage increases
there is a corresponding decrease in current.

Q.7

Why is the base of transistor of made thin in

comparison to the emitter or collector region.

A.7

The base of transistor is made thin in comparison to

the collector and the emitter region because the
recombination in the base
region should be small.

Q.8

What is the effect of temperature on the conductivity

of a semiconductor?

A.8

The conductivity of the semiconductor increases with

the increase in temperature because as the
temperature increases more and more covalent bonds
break resulting in the release of charge particles.

Q.9
A.9

In a transistor base is very lightly doped, why?

In transistor the base is lightly doped so that the
recombination in the base region should be small and
the magnitude of output current is large

Q.10 In what type of semiconductor the electron and the

hole concentrations are equal?
A.10

In intrinsic semiconductors the concentrations of the

electrons and the holes are equal.

Q.11 Explain why the transistor starts working

immediately on switching on whereas vacuum tube
circuits take some time before they starts working?
A.11

Vacuum tube circuits are based on the heating effect

of the current and thermionic emission takes place from
cathode when it is heated. Thus, it takes some time to
start as cathode cant be heated instantly.

Q.12 Why is the depletion region formed at the pn

junction?
A.12

The depletion region is formed because of the

recombination of electrons and the holes at the junction

Q.13 What will happen if collector as well emitter are

forward biased?
A.13

In this case transistor will work as two pn diodes

and it can not work as amplifier or oscillator.

Q.14
A.14

What is Fermi level and what is Fermi energy?

Fermi energy level is the highest energy level

occupied by the electrons at 00- kelvin and the energy of
that level is fermi energy.

Q.15

Can we use pn junction as amplifier?

A.15

No, a pn junction diode cannot be used as amplifier.

Q.16 Is the number of electrons and holes equal in

extrinsic semiconductors. Are they charged?
A.16

No, the number of electrons and holes are not equal

in extrinsic semiconductors. Yes, both n type and p type
semiconductors are charged

Q.17 Is the junction diode linear or a non linear circuit

element?
A.17

Junction diode is a non linear circuit element because

the V-I curve is not a straight line

Q18

What will happen if both emitter and collector

junction are reverse biased

A.18

In this situation no current will flow in the

semiconductor because majority carriers cannot move
across the emitter base or base collector junctions.

Q.19
A.19

How will you detect intensity of light using diode?

Light intensity can be measured using a photodiode

in reverse biasing.

Q.20 Why gallium arsenide solar cells are preferred over

silicon solar cells?
A.20

Gallium arsenide solar cells are used because they

can operate with visible energy whereas the silicon
diodes works with infrared energies.

Q.21 Define input and the output resistance of a

transistor?
A.21

Input resistance of transistor is the ratio of change in

base voltage to the change in base current at constant
collector voltage .

Q.22 What is the phase relation between the input and the
output signal in an amplifier?
A.22

Input and output current are in phase in common

base transistor base in transistor as common emitter
the input and the output are out of phase by 1800

Q.23 What is zener breakdown and what is the zener

breakdown voltage?
A.23

Zener breakdown takes place when a strong reverse

bias electric field is applied across the semiconductor.
The covalent bonds in the structure break
simultaneously resulting in large increase in the
magnitude of the current. The voltage at which zener
breakdown occurs is zener breakdown voltage

Q.24 What is the avalanche breakdown voltage of a

junction diode?
A.24

When the reverse bias voltage is increased to a

large value large number of covalent bonds break near
the junction resulting in large reverse currents flowing
in the transistor. The voltage at which breakdown
occurs is avalanche breakdown voltage

Q.25 What will happen if the input circuit is reverse biased

and the output circuit is forward biased?
A.25
In this case the collector starts acting as emitter and
the emitter as collector with transistor functioning as
usual.

Q.26 What type of charge carriers flow during reverse

biasing of the diode?
A.26
In reverse biasing the charge carriers flowing in
a semiconductor are minority charge carriers.
Q.27
A.27

Transistor is a temperature sensitive device. Explain.

Transistor is a temperature sensitive device because

the number of charge carriers increases with the
increase in current but if the current increases to a very
large magnitude it may damage the transistor.

Q.28 Why an extrinsic semiconductor gets permanently

damaged if temperature is increased beyond a certain
limit?
A.28

If temperature is increased beyond a limit large

number of covalent bonds break in the structure
resulting in release of charge carriers and making it
highly conducting

Q.29 Explain why input resistance of transistor is low and

the output resistance is high.
A.29

Input resistance of the transistor is low because

input circuit is forward biased whereas the output
circuit is reverse biased.

Q.30 How can you increase the current gain in an amplifier

circuit?
A.30

Current gain can be increased by decreasing the

doping level in the base and keeping it thin.

Q.31 What is the potential barrier of pn junction in a

silicon transistor?
A.31

Potential barrier for silicon transistor is of the order

of 0.3V and for germanium transistor it is of the order of
0.7V.

Q.32 Why are transparent bodies insulators?

A.32
Energy of the photon of visible light is of the order of
1eV to 3eV. Such an energy can be absorbed by the
valence shell electrons and these electrons still lacks
the energy required to jump to the conduction band
Q.33 For what particular application the common base
configuration is preferred over the common emitter
configuration?
A.33

Common base is preferred over common emitter if

we want the voltage amplification without the phase
difference between input and the output.

Q.34 By increasing load resistance can we increase or not

the gain of transistor indefinitely.
A.34

No, because increases RL will decrease the net

output voltage. If the output voltage becomes less than
input then it cannot act as amplifier.

Q.35
A.35

Why a transistor cannot be used as rectifier?

Transistor can not be used as rectifier because the

two extreme layers are identical whereas for
rectification two extreme layers should be of similar
type.

Q.36 In the depletion region of pn junction what are the

charge carriers in its unbiased state?
A.36

In depletion region there are no charge carriers

present

Q.37 What type of feedback is required in transistor as an

oscillator?
A.37

In transistor as an oscillator positive feedback is

required i.e. emf is induced in such a way that if current
in output increases emf is induced in input to support

the forward bias and if the current in output decreases

emf is induced in input to oppose the forward bias.
Q.38 Can we measure the potential barrier of a pn junction
by putting voltmeter
across is?
A.38

In the depletion layer, there are no free charges

present, thus it offers infinite resistance to the flow of
current through it. Therefore potential barrier across a
p-n junction cannot be measured using voltmeter.

Q.39

Fill in the blanks

[1] When p-n junction if forward biased, then the
motion of charges across the barrier is due to..
and when it is reverse biased then the motion of
charge carriers is due to..
[2] An ideal pn junction diode conducts, when
__________ and does not conduct when ______

A.39

[1] diffusion, drift [2] forward biased, reverse biased

Q.40 Can two p-n junction diodes back to back work as

transistor?
A.40

In a transistor, the base region should be thin and

lightly doped so that the recombination rate in the base
should be small. But if the two diodes are joined back to
back the base will be almost double the thickness as
emitter or collector and it cant work as transistor.

Q.41 Portable radio receiver sets are generally not made

with electronic tube circuits?
A.41

A portable radio receiver should be small in size and

should work on dc. A receiver set made of electronic
vacuum tubes is large in size and works only on ac.

Q.42

State two disadvantages of semiconductor devices.

A.42

[1] The semiconductor devices cant withstand high

temperature and an get damaged
[2] the semiconductor devices gets damaged by
power surge and cant withstand high power.

Q.43 When semiconductor junction diode is formed

electrons should flow from n to p region but all the
electrons do not do so? Explain why?
A.43

When electrons are transferred from p type to n

type, the n type semiconductor gets positively charged
and p type gets negatively charged which creates
potential difference across junction. This potential
difference after some time prevents the flow of electron
from n type to p type.

Q.44 Why does the thickness of depletion region in a pn

junction diode increases with increase in reverse bias?
A.44
When a pn junction is formed, a small potential
difference is set up across the depletion layer. But when
it reverse biased the charges move away from the
junction thus increasing the width of the depletion
region.
Q.45 Name the p-n junction diode which emit spontaneous
radiation when forward biased. How do we choose the
semiconductor, to be used in these diodes, if emitted
radiation lies in visible region.
A.45

The p-n junction that emits radiation when forward

biased is called photodiode. In case of gallium arsenide
the emitted radiations lies in the visible region.

Q.46 In a transistor forward bias is very small as compared

to reverse bias. Explain why?
A.46

If the emitter voltage is large, then the number of

charges drifting from emitter to collector through base
becomes very large. It results in lot of heat generation
which can damage the transistor. But if collector reverse

bias is large charges may drift quickly to collector but

there is small and no heating effect is produced.
Q.47
A.47

Why base region in the transistor is made thin?

Base is thin and lightly doped so that the

recombination rate always remains small in the base
region and the base current is never more than 5% of
the emitter current.

Q.48

Why transistor cant be used as rectifier?

A.48

Transistor cannot be used as rectifier because to

work as transistor either base emitter or base collector
region is to be used. But as base is thin and lightly
doped neither of the two regions will work as diode or
rectifier.
Q.49 Identify the logic gates marked X and Y. write down
the value of y when A=1, B=1 and A=0, B=1
A.49

X is NAND gate and Y is Or gate. The output in both

the cases is 1

Q.50 Identify the gates marked X and Y and write output

when A=1, B=1 and when both are zero.
A.50

Gate X is NAND gate and gate Y is NOT gate. The out

put is one when both inputs are one and output is zero
if both the inputs are zero.

Q.51 NAND and NOR gate may be considered as digital

building blocks. Why?
A.51

The repeated use of NAND or NOR can produce all 3

basic gates i.e. OR, AND and NOT. Thus they are called
basic building blocks.

Q.52 The gain of common emitter amplifier is given by Av=

-gmRL. does it mean that if we keep on increasing the
value of RL indefinitely, the gain of amplifier will
increase? Explain.

A.52

No because increasing the RL will decrease Vc and a

stage is come where both input and output gets forward
biased.