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Typical Procedure For Lithography IV. Exposure System/Optics
Typical Procedure For Lithography IV. Exposure System/Optics
CTN
Contact Printing
Clean Wafer
9/23/14
Dry Wafer
Deposit HMDS
(for oxide on
wafer surface)
Spin-on PR
30-60 sec @
1000-5000 rpm
underexpose
overexpose
2 min @ 90C
Improve adhesion and remove solvent from PR
Soft Bake
Photoresist
Descum
Photoresist
Post Bake
LecM 1
C. Nguyen
8/20/09
11
Photoresist
Step &
repeat
wafer
LecM 1
C. Nguyen
8/20/09
13
LecM 1
C. Nguyen
8/20/09
12