Semiconductor devices may be classified on the basis of charge carriers.

This is less obvious

but has a strong influence on the device performance. In the semiconductor the more
abundant charge carriers are called majority carriers. In n-type semiconductors they are
electrons, while in p-type semiconductors they are holes. Whereas in an intrinsic
semiconductor the concentrations of both types of carriers are ideally equal.

Explanation:
Majority carriers play an important role in bipolar transistors, diodes and solar cells.
However, their role in field-effect transistors (FETs) is a bit more complex: for example, a
MOSFET has both p-type and n-type regions. The transistor action involves the majority
carriers of the source and drain regions, but these carriers traverse the body of the opposite
type, where they are minority carriers. However, the traversing carriers hugely outnumber
their opposite type in the transfer region, so conventionally the source and drain designation
for the carriers is adopted, and FETs are called "majority carrier" devices.
In case of BJTs they uses both type of charge carrier of the flow of current so it is referred as
minority carrier device. Similar is the case for IGBTs as BJTs.
A majority carrier device is faster, but the charge injection of minority carrier devices allows
for better on-state performance.
On the basis of above explanation we can conclude the semiconductor devices as follows:
Semiconductor Device
BJT
IGBT
MOSFET
SiC

Carrier type
Minority carrier device
Minority carrier device
Majority carrier device
Majority carrier device

S e m ic o n d u c t o r
d e v ic e s

M in o r i t y
C a r r ie r

M a jo r ity
C a r r ie r

B JT

M O SFET

IG B T

S IC

Figure: Classification on the basis of charge carrier

Fundamentals of Power Electronics & Control Systems

Professor: Dr. Byoung-Gun Park

Submitted by: Muhammad Haseeb Iftikhar

Question:
Classify the following power semiconductor devices on the basis of majority or
minority charge carrier type:
BJT
IGBT
MOSFET
Sic