Term End Examination - November 2013

Course

: ECE402

Class NBR

: 1446 / 1448

Time

- Microwave Engineering

Slot: C2

Max.Marks:100

Three Hours

General Instructions:
i) Assume reasonable values for missing parameters
ii) Use smith chart wherever necessary
Answer any TEN Questions
(10 X 10 = 100 Marks)
1.

a)

A microwave bench setup is used to calibrate the setting on a CW signal generator. Two
adjacent nulls are found on the slotted section. The scale readings are 12.4 cm and
25.7 cm. What is the wavelength in centimeters and the frequency of the signal generator
at this setting?

[6]

b)

Give the medical and industrial applications of Microwaves.

[4]

2.

For the following 4- port network,

0
0
0.1 0.25
0.25
0
0.25 0

[S ] =
0
0.25
0
0

0
0
0.1
0
a)
b)

3.

4.

Describe the network properties.

Calculate the return loss at port-1 when port-2, 3 and 4 are with load mismatches of
2 = 0.4, 3 = 0.4 and 4 = 0.5.

[4]

a)

A lossless T-junction power divider has load mismatches at port-1 and port-2 as 1 = 0.2
and 2 = 0.3 respectively. Draw the signal flow graph for this network.

[5]

b)

Design a resistive power divider for a system impedance of 60 . Also calculate the
reflection coefficient at port-3.

[5]

a)

A directional coupler has following [S], find

i
Coupling factor
ii
Isolation
iii
Directivity

[5]

0.01 0.8 0.1 0.01

0.8 0.01 0.01 0.1

[S ] =
0.1 0.01 0.01 0.8

0.01 0.1 0.8 0.01

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[6]

b)

5.

Design a branch-line coupler at 4 GHz with characteristic impedance of 40 . Draw the

microstrip line layout with appropriate scale.

[5]

Design a stepped impedance maximally flat low-pass filter for a cut off frequency of

[10]

2 GHz. The insertion loss should be more than 45 dB at 5 GHz. The highest possible
impedance is 120 and the lowest impedance is 20 . (Assume first element as inductor)
Order
1
2
3
4
5
6
7
8
9
10
6.

g1
2
1.414
1
0.765
0.618
0.517
0.445
0.390
0.347
0.312

Maximally flat low pass prototype element values

g2
g3
g4
g5
g6
g7
g8
g9
g10
1
1.414
1
2
1
1
1.847 1.847 0.765
1
1.618 2.000 1.618 0.618
1
1.414 1.931 1.931 1.414 0.517
1
1.246 1.801 2.000 1.801 1.246 0.445
1
1.111 1.662 1.961 1.961 1.662 1.111 0.390
1
1.000 1.532 1.879 2.000 1.879 1.532 1.000 0.347
1
0.907 1.414 1.782 1.975 1.975 1.782 1.414 0.907 0.312

A GaN FET with S parameters of S11 = 0.65 140, S12 =0.0460, S21 = 2.4 50, and

[10]

S22 = 0.765. Design the output matching section using shunt stub for achieving
maximum gain.
7.

A SiGe HBT device has the following scattering parameters at 2.0 GHz: S11 = 0.890,

[10]

S12 = 0.0370, S21 = 5.180, and S22 = 0.6240. Determine the stability of the
device, plot the stability circles and mark the region of stability.
Design a 4th order low pass filter using Richards transformations and Kurodas identities
with shunt stubs only. Consider the normalized filter coefficient as g1=0.765, g2=1.848,
g3=1.848 and g4=0.753. (Assume first element as inductor).

[10]

a)

Explain the working of Magic Tee junction and also derive the scattering matrix.

[5]

b)

With detailed diagram, explain the working of Ferrite based Isolator.

[5]

a)

Determine the scattering matrix of a circulator with an isolation of 65 dB and an insertion

loss of 0.2 dB.

[5]

b)

Explain the working of two-hole directional coupler with proper phase diagram.

[5]

11.

With the help of a diagram, explain the generation of microwaves using Magnetron.

[10]

12.

What is Gunn effect? Explain it with two-valley theory.

[10]

8.

9.

10.

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