Electronic circuit Lab

FEEE-University of Technology

Lab4- Basic modes of MOSFET AMP

--------------------------------------------------------------------------------------------------------Mc ch
[1] Nm vng cc kiu ghp c bn CS, CG, CD v cc thng s c trng ca chng.
[2] Hiu r nh hng ca hi tip ln cc thng s c trng (Av, Ai, Zi, Zo, p ng
tn s) ca mch khuch i dng MOSFET.
[2] o c cc thng s c trng (Av, Ai, Zi, Zo, p ng tn s) so snh gia cc
kiu ghp c bn ca mch khuch i dng MOSFET.

1. Chun b th nghim
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c li l thuyt v mch khuch i dng MOSFET : Microelectronic Circuits, fifth

Edition, Sedra/Smith, pages 235-335.

Trnh by c tuyn VGS-ID ca MOSFET v cch xc nh cc thng s: Vt,

K=k'n ( W/L ) , gm ti im lm vic tnh bit trc da trn c tuyn ny.

-

Cho mch phn cc cho MOSFET nh H1.1 , nu bit trc ID, RD, RS, RG1, K, Vt, hy
vit cc biu thc lin quan xc nh RG2.

Cho mch in t nh H1.2, bit y cc thng s mch v gi s MOSFET c

phn cc hot ng ch bo ha, hy vit cc biu thc ca AV, Zi, Zo ti tn s
di gia (b qua nh hng ca t ngoi v t k sinh)

Lm tng t cho mch in t trn H1.3, H1.4 v H1.5.

Da trn cc thng s trn AV, Zi, Zo, hy rt ra nhn xt cho cc mch khuch i trn
H1.2 , H1.3, H1.4 v H1.5.

Cho mch in t trn H1.6, bit y cc thng s mch v gi s MOSFET c

phn cc hot ng ch bo ha. Hy trnh by m hnh mch tn s thp v
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tn s cao, t xc nh biu thc tn s ct thp (f1) v ct cao (f2) ca mch in t

ny.

c phn 3, thc hin th nghim, sau tm tt cc cng vic chnh phi lm trong
bui th nghim.

Xem li cch s dng dao ng k v my o vn nng o cc i lng lin quan

trong bui th nghim.

Download v c datasheet ca MOSFET 2N7000

2. Dng c th nghim

B th nghim chnh ELECTRONIC LAB ANA-MAIN

Module: Basic modes of MOSFET AMP

Dao ng k: GRS-6052A

My o: Fluke 45

B dy n i

3. Thc hin th nghim

MOSFET l linh kin rt d b hng do tnh in. Do trong qu trnh thao tc th
nghim phi ht sc thn trng tun th ng mt s nguyn tc sau:

Khng chm tay vo cc G c a MOSFET v rt d gy nguy him cho MOSFET do

tnh in c a tay.

Tt ton b cc ngun cung cp v tn hiu, my o chc nng o in tr, test diode

trc khi thc hin thao tc ni hoc thay i mch.

Khi n i mch, thc hin cc phn ca mch khng lin quan ti MOSFET trc, ni
MOSFET vo sau cng.

Nu c bt c nghi ng no lin quan ti s h h ng ca MOSFET, phi ngay lp tc

bo cho cn b qun l PTN bit kim tra v thay th nu MOSFET b hng. Ch :
s lng MOSFET cho m i bui th nghim l c hn, do vy cn b qun l PTN c
quyn t chi thay th cho nhm TN lm h hng qu nhiu MOSFET.

3.1. Dng c tuyn VGS-ID v xc nh Vt, K, g m

Thc hin mch in t trn H3.1a dng module Basic modes of MOSFET AMP nh
H3.1b.

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Dao ng k chn mode X-Y, c 2 knh chn mode DC, knh 2 ch n INV. Chnh bin
tr VR2 v quan st im sng trn mn hnh, qu o ca im sng chnh l c tuyn
VGS-ID ca MOSFET, v li c tuyn ny vo bng 3.1.

Da vo c tuyn VGS-ID hy o c Vt, K v gm ti im lm vic tnh c ID=20mA,

ghi nhn li cc gi tr vo bng 3.1 .

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3.2. Kho st mch ghp S chung (CS)

a. Thc hin mch in t trn H3.2a dng module Basic modes of MOSFET AMP nh
H3.2b.

b. H kha K chnh bin tr VR2 in p trn R7 bng 2V (tc ID=20mA). Dng dao
ng k quan st tn hiu vo v ra, my pht sng chn sng sin tn s 5KHz, bin
ch n nh nht. ng kha K, tng dn bin my pht sng ng ra c vop-p=4V, v
li dng sng ca ng vo v ra vo bng 3.2, t xc nh li p c a mch.
c. Gi nguyn bin ca my pht sng, tt ngu n cung cp, tt my pht sng, ni n i
tip bin tr VR1 vi C1, VR1 chnh v nh nht. M ngun cung cp v my pht
sng, tng dn bin tr VR1 cho ti khi vop-p=2V. Tt ngun cung cp, tt my pht
sng, cch ly bin tr VR1, dng Fluke 45 o in tr c a VR1, chnh l Zi.
d. Tho VR1 ra kh i mch, n i li mch nh H3.2b, bin my pht sng gi nguyn,
ni ti l bin tr VR4 vo ng ra qua t ghp C5, VR4 chnh ln nht. M ngun cung
cp v my pht sng, gim dn VR4 cho ti khi vop-p=2V. Tt ngu n cung cp, tt my
pht sng, cch ly bin tr VR4, dng Fluke 45 o in tr ca VR4, chnh l Zo.
e. Thay i mch in t trn H3.2a & b bng cch tho b C4 ra kh i mch. Thc hin
li cc bc t b ti d, ghi gi tr vo bng 3.2.

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3.3. Kho st mch ghp G chung (CG)

a. Thc hin mch in t trn H3.3a dng module Basic modes of MOSFET AMP nh
H3.3b.

b. H kha K chnh bin tr VR2 in p trn R7 bng 2V (tc ID=20mA). Dng dao
ng k quan st tn hiu vo v ra, my pht sng chn sng sin tn s 5KHz, bin
ch n nh nht. ng kha K, tng dn bin my pht sng ng ra c vop-p=4V, v
li dng sng ca ng vo v ra vo bng 3.2, t xc nh li p c a mch.
c. Gi nguyn bin ca my pht sng, tt ngu n cung cp, tt my pht sng, ni n i
tip bin tr VR1 vi C2, VR1 chnh v nh nht. M ngun cung cp v my pht
sng, tng dn bin tr VR1 cho ti khi vop-p=2V. Tt ngun cung cp, tt my pht
sng, cch ly bin tr VR1, dng Fluke 45 o in tr ca VR1, chnh l Zi. Lu
: trong qu trnh chnh VR1 m thy gi tr bin ca my pht sng thay i so
vi bc a th phi iu chnh li cho ng.

d. Tho VR1 ra khi mch, ni li mch nh H3.3b, bin my pht sng gi nguyn
nh bc a, n i ti l bin tr VR4 vo ng ra qua t ghp C5, VR4 chnh ln nht. M
ngun cung cp v my pht sng, gim dn VR4 cho ti khi vop-p=2V. Tt ngun cung
cp, tt my pht sng, cch ly bin tr VR4, dng Fluke 45 o in tr c a VR4,
chnh l Zo.

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3.4. Kho st mch ghp D chung (CD)

a. Thc hin mch in t trn H3.4a dng module Basic modes of MOSFET AMP nh
H3.4b.

b. H kha K chnh bin tr VR2 in p trn R7 bng 2V (tc ID=20mA). Dng dao
ng k quan st tn hiu vo v ra, my pht sng chn sng sin tn s 5KHz, bin
ch n nh nht. ng kha K, tng dn bin my pht sng ng ra c vop-p=4V, v
li dng sng ca ng vo v ra vo bng 3.2, t xc nh li p c a mch.
c. Gi nguyn bin ca my pht sng, tt ngu n cung cp, tt my pht sng, ni n i
tip bin tr VR1 vi C1, VR1 chnh v nh nht. M ngun cung cp v my pht
sng, tng dn bin tr VR1 cho ti khi vop-p=2V. Tt ngun cung cp, tt my pht
sng, cch ly bin tr VR1, dng Fluke 45 o in tr c a VR1, chnh l Zi.
d. Tho VR1 ra khi mch, ni li mch nh H3.4b, n i thm t i l bin tr VR4 vo ng
ra qua t ghp C6, VR4 chnh ln nht. M ngun cung cp v my pht sng, chnh
bin my pht sng ng ra c gi tr l vop-p=100mV. Gi nguyn bin my
pht sng, gim dn VR4 cho ti khi vop-p=50mV. Tt ngun cung cp, tt my pht
sng, cch ly bin tr VR4, dng Fluke 45 o in tr c a VR4, chnh l Zo.

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3.5. Kho st p ng tn s ca mch ghp CS

a. Thc hin mch in t trn H3.5a dng module Basic modes of MOSFET AMP nh
H3.5b.

b. H kha K chnh bin tr VR2 in p trn R7 bng 2V (tc ID=20mA). Dng dao
ng k quan st tn hiu vo v ra, my pht sng chn sng sin tn s 5KHz, bin
ch n nh nht. ng kha K, tng dn bin my pht sng ng ra c vop-p=2V,
gi nguyn bin my pht sng, thc hin o c v hon thnh bng 3.3.
c. o 2 tn s ct thp v cao ca mch in t ny, ghi s liu vo bng 3.3. Lu : tn
s ct l tn s ti bin c a ng ra bng 1 / 2 gi tr bin ng ra ti di gia

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4. Bo co th nghim

Phn tch so snh kt qu l thuyt vi thc nghim

So snh cc kiu ghp c bn ca mch dng MOSFET

Kt lun, gii thch v vai tr ca hi tip

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