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STD17NF03
STD17NF03
VDSS
RDS(on)
ID
30V
<0.05
17A
DESCRIPTION
This Power Mosfet is the latest development of STMicroelectronics unique Single Feature Size stripbased process. The resulting transistor shows extremely high packing density for low on-resistance,
rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
3
3
2
DPAK
IPAK
APPLICATIONS
DC-DC & DC-AC CONVERTERS
MOTOR CONTROL, AUDIO AMPLIFIERS
SOLENOID AND RELAY DRIVERS
AUTOMOTIVE ENVIRONMENT
Value
Unit
30
30
20
ID
17
ID
12
68
20
0.13
W/C
V/ns
200
mJ
VDS
VDGR
VGS
IDM ()
PTOT
Parameter
Derating Factor
dv/dt (1)
EAS (2)
Tstg
Tj
Storage Temperature
Max. Operating Junction Temperature
Aug 2000
65 to 175
175
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STD17NF03L
THERMAL DATA
Rthj-case
7.5
C/W
Rthj-amb
62.5
C/W
275
Tl
Parameter
Drain-source
Breakdown Voltage
IDSS
IGSS
Gate-body Leakage
Current (VDS = 0)
Test Conditions
ID = 250 A, VGS = 0
Min.
Typ.
Max.
30
Unit
V
10
100
nA
Max.
Unit
VGS = 20V
ON (1)
Symbol
Parameter
Test Conditions
Min.
Typ.
VGS(th)
RDS(on)
Static Drain-source On
Resistance
0.038
0.05
VGS = 5 V, ID = 8.5 A
0.045
0.06
ID(on)
17
DYNAMIC
Symbol
gfs (1)
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Parameter
Forward Transconductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID =11A
Min.
Typ.
Max.
Unit
330
pF
90
pF
40
pF
STD17NF03L
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Delay Time
Rise Time
Qg
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
Min.
Typ.
Max.
Unit
11
ns
100
ns
6.5
nC
3.6
nC
nC
SWITCHING OFF
Symbol
td(off)
tf
Parameter
Turn-off-Delay Time
Test Conditions
Min.
Fall Time
Typ.
Max.
Unit
25
ns
22
ns
22
ns
tf
Fall Time
55
ns
tc
Cross-over Time
75
ns
tr(off)
Parameter
Test Conditions
Min.
Typ.
Source-drain Current
ISDM (1)
VSD (2)
Forward On Voltage
trr
Qrr
IRRM
Max.
Unit
17
68
1.5
30
ns
18
nC
1.2
Thermal Impedence
3/9
STD17NF03L
Output Characteristics
Transfer Characteristics
Transconductance
Capacitance Variations
4/9
STD17NF03L
Normalized Gate Thereshold Voltage vs Temp.
5/9
STD17NF03L
Fig. 1: Unclamped Inductive Load Test Circuit
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STD17NF03L
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
6.00
6.20
0.236
0.244
6.40
6.60
0.252
0.260
4.40
4.60
0.173
0.181
9.35
10.10
0.368
0.398
L2
0.8
0.031
L4
0.60
1.00
0.024
0.039
V2
0o
8o
0o
0o
P032P_B
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STD17NF03L
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
2.4
0.086
MAX.
0.094
0.043
2.2
A1
0.9
1.1
0.035
A3
0.7
1.3
0.027
0.051
0.64
0.9
0.025
0.031
B2
5.2
5.4
0.204
0.212
B3
0.85
B5
0.033
0.3
0.012
B6
0.95
0.037
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
6.2
0.236
0.244
6.4
6.6
0.252
0.260
4.4
4.6
0.173
0.181
15.9
16.3
0.626
0.641
9.4
0.354
0.370
L1
0.8
1.2
0.031
L2
0.8
0.047
0.031
0.039
A1
C2
A3
B3
=
=
B2
B5
B6
L2
L1
0068771-E
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STD17NF03L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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