Reg. No.

Question Paper Cod e z 22093

B. E.

.J

lB.Teph. DEGREE EXAMINATtrON, NOVEMBERIDECEMBER 20 L6.

Second Sernester

Engineering
PH 2T6ilPH 23/O8OO4OOO2 ': ENGINEERING
Civil

\
PITYSICS _

il

(Common to all branches)

(Regulations 2008)

fime : Three hours

Maximum :'100 marks

Answer ALL questions.
PART A

1.

State Wiedemann-Fran z \aw.

(10 x

2=

2O

marks)

5.

Calculate the conduetivity of intrinsic semiconductor if the .mobilities of

it aie 8.6 x 106 mzlv.s. and. 1.7 x 106 m4fu-s. respectively.
Theelectronandholedensitiesint}resampleis2.2X1019/n3.
Mention the drawbacks of classical free electron theory.
Distinguish between intrinsic and extrinsic semicond.uctors.
What dre antiferro magnetic materials? Give examples.

6.

What is magnetic levitation?

7,

What is the effect of temperature on polarization in dielectrics?

8.

Whet is thermal,breakdown in dielectrics?

9.

Mention some of the applications of shape memory alloys.

Write any four properties of Nanomaterials.

electrons and holes in

3:

4.

10.

PARTB-(5x 16=80marks)
11. '(a) (i)

(ii)

Derive the expressions for electrical and thermal conductivity based

(10)
on classical free electron theory.

Calculate the electrical , and thermal conductivities for a

metal with a relaxation time of 10-1a second at 300 K. Also calculate
the Lorentz numbef using the above result. fDensity of
electrons

(b) (t
(ii)

6 x:1028/m3l

(6)

:or

(10)
Derive an expres.sion-'fDr.densi:ty of etreigy states.
Give an aceount on.r'Fermi-Dirac distribution function.'Draw a
graph showing its v-ariation with energy at different temperature
(6)
and discuss it.

L2. (a) (l) Derive an

expression

for

carrier concentration

in intrinsic

semiconductors.

(ii) Explain in detail how the band

gap energy of an intrinsic

semiconductor is determined.

(6)

Or

(b) (i)
(ii)
13. (a) (i)

Explain in detail the variation of Fermi level with temperature and

(10;,impurrty concentration in N- type serniconductors. *
What is Hall effect? Obtain an expression for HalI coefficient. (6)
Explain the domain theory of Ferromagnetism aqd. hence describe
(10)
the magnetic hysteresis. '

(ii) m?t are Ferrites? Explain magnetic

mechanisms.

recording and read out

(6)
I

(b) (t

Describe the different properties of superconductors and also

explain the classification of super conductors as Tlpe I and Type II

superconductors.

(ii)

(10)

Explain BCS theory of superconductors.

L4. (a) (i) Define Electrical susceptibility. Explain clectronic,

orientati,onal and qpace charge

(ii)

polarization.

ionic,
(10)

Give an account on the use of dielectric materials in eapacitors and

(6)
transformers.
Or

(b) (il

What is internal field? Derive an expression for local field and

hence obtain Clausius-Mosotti relation.

(ii)
15.

(a) ,(t
(ii)

Discuss the frequency dependence of polarization-

(10)
(6)

What are metallie glasses? E;plain the preparation, properties and

(10)
applications of metallic glasses.
What are nanomaterials? trlxplain the chemical vapour deposition
method to s.v+thesis

nSnomqterials

(U)

Or

(b) (t
(ii)

What are shape memory alloys? Discuss the characteristies and

properties of shape memory alloys.
\ (10)
Explain the pulsed laser deposition method of fabricating carbon
Nanotubes. Mentisn some of the applications of carbon nanotubes.
.},.

(6)

22093