Electro-optic Devices

Chapter 8
Physics 208, Electro-optics
Peter Beyersdorf

Document info

Modulators
Encode analog or digital signals on an optical
wave
Shift optical power to other spectral frequency
bands
Act as fast switches for laser Q-switching,
etc
Control power and or phase of a beam

9_EO_Modulators 580-581.qxd.P

7/6/07

10:51 AM

Page 580

Laser & ASE Systems

Tunable Lasers

Electro-Optic Modulators

Femtosecond Laser
WDM Laser Sources
Benchtop
Laser Sources
HeNe Lasers
ASE Sources
EO-PM-NR-C1

Terahertz
Electro-Optic
Modulators

EO-AM-NR-C2
With EO-GTH5M

Thorlabs free-space electro-optic (EO) amplitude and phase lithium

niobate modulators combine crystal growth and electro-optic materials.
Our standard modulators use undoped lithium niobate. For higher-power
operation, we offer MgO-doped lithium niobate. The standard EO
modulators are broadband DC-coupled, and a high Q resonant model
option is available.
Our standard DC-coupled broadband EO modulators consist of an EO
crystal packaged in a housing optimized for maximum RF performance.
The RF drive signal is connected directly to the EO crystal via the SMA
RF input. An external RF driver supplies the drive voltage for the desired
modulation. The crystal may be modulated from DC up to the frequency
limits of the external RF driver.
For flexibility, Thorlabs also offers a second modulator option. Resonant
frequency modulators simplify the driver requirements for many
applications where the modulator is operated at a single frequency. A high
Q resonant tank circuit located inside the modulator boosts the low-level
RF input voltage from a standard function generator to the high voltage
needed to get full depth of modulation. Call our tech support team for
details on the specific resonant frequencies available.
EO Amplitude Modulator
The electro-optic amplitude modulator (EO-AM) is a Pockels cell type
modulator consisting of two matched lithium niobate crystals packaged in
a compact housing with an RF input connector. Applying an electric field
to the crystal induces a change in the indices of refraction (both ordinary
and extraordinary), giving rise to an electric field-dependent birefringence,
which leads to a change in the polarization state of the optical beam. The
EO crystal acts as a variable wave plate with retardance linearly dependent
on the applied electric field. By placing a linear polarizer at the exit, the

EO-HVA

Features

High Performance in a Compact Package

Broadband DC Coupled and High Q Resonant
Models for Low RF Drive
Standard Broadband AR and Custom Coatings
2mm Clear Aperture
SMA Female Modulation Input Connector
MgO-Doped Versions for High Power
DC to 100MHz
Custom OEM Versions Available

EO Amplitude Modulator Crystal Configuration

Longitudinal Modulators
Short crystal lengths

modulation voltage

Large field-of-view
light beam

Phase or amplitude modulation

EO phase shift is of the form
=

3
n rEL

crystal
transparent electrodes

Longitudinal LiNbO3 Modulator

In a z-cut LiNbO3 crystal
x2 (

1
2 1
2 1
+
r
E)
+
y
(
+
r
E)
+
z
( 2 + r33 E) = 1
13
13
n20
n20
ne

giving

1
nx = n0 n30 r13 E,
2
1
ny = n0 n30 r13 E,
2
1
nz = ne n30 r33 E,
2

Which means there is no birefringence (nx=ny)

induced by the modulation, only a pure phase delay
results
2
3
= kL =

n0 L

n0 r13 V

Longitudinal LiNbO3 Modulator

the half wave voltage is
V =

n30 r13

and if the applied voltage is sinusoidal

such that
V = Vm sin t ,

The transmitted field can be expressed as

E(z, t) = Ein ei(tkz0 + sin t )

where!! !

! =
!

3
Vm
n
r
V
=

! !13 !m ! !V !
0

! and

0 =

2
n0 L

KDP Example
Design an amplitude modulator using a KDP
crystal with longitudinal modulation (applied
electric field in the direction of propagation)
Find an expression for the transmitted power as
a function of applied voltage

Recall our previous example calculating the principle

axes and indices of refraction in KDP
7

KDP Example
Potassium Dihidrogen Phosphate (KH2PO4)
_
42m crystal group (tetragonal) [table 7.3]
Form of rik matrix is found from table 7.2

rik

0
0

0
=
r41

0
0

0
0
0
0
r41
0

0
0

0
r63

Electrooptic and optical properties [table 7.3]

r41=8x10-12 m/V, r63=11x10-12 m/V @633 nm
nx=ny=no=1.5115, nz=n
8 e=1.4698

KDP Example
equation
for index
!
"
!ellipsoid is
"

1
1
2
2
+
r
kE
x
+
+
r
kE
y
+
1
k
2
k
n2x
n2y
+2yzr4k Ek + 2xzr5k Ek + 2xyr6k Ek = 1

"
1
2
+
r
kE
z
3
k
n2z

which becomes
!

"
!
"
!
"
1
1
1
+ r1 kEk x2 +
+ r2 kEk y 2 +
+ r3 kEk z 2
2
2
2
nx
ny
nz
+2yzr41 Ex + 2xzr52 Ey + 2xyr63 Ez = 1

or
x2
y2
z2
+ 2 + 2 + 2yzr41 Ex + 2xzr41 Ey + 2xyr63 Ez = 1
n2o
no
ne

for a field applied entirely along z:

x2
y2
z2
+ 2 + 2 + 2xyr63 Ez = 1
n2o
no
ne 9

KDP Example
x2
y2
z2
+ 2 + 2 + 2xyr63 Ez = 1
n2o
no
ne

We can choose a new set of principle coordinates

x, y and z that recast this equation into the
form
x!2
y !2
z !2
+ 2 + 2 =1
n2x!
ny !
nz !

From inspection z=z, so let xy and xy differ by

a rotation of around the z-axis:
x=xcos-ysin
y=xsin+ycos
(x! cos y ! sin )2
(x! sin + y ! cos )2
z2
+
+ 2 + 2(x! cos y ! sin )(x! sin + y ! cos )r63 Ez = 1
2
2
no
no
ne 10

KDP Example
Evaluating gives
(x! cos y ! sin )2
(x! sin + y ! cos )2
z2
+
+ 2 + 2(x! cos y ! sin )(x! sin + y ! cos )r63 Ez = 1
2
2
no
no
ne

or

x!2
y !2
z !2
z !2
x! y ! sin 2 x! y ! sin 2
+ 2 + 2 + 2
+
+ (x!2 sin 2 + 2x! y ! cos 2 y !2 sin 2)r63 Ez = 1
2
2
2
no
no
ne
ne
no
no

cross term 2xycos(2)0 for =45 giving y y

x!2
y !2
z !2
+ 2 + 2 + (x!2 y !2 )r63 Ez = 1
2
no
no
ne

or
!

"
!
"
1
1
z !2
!2
!2
+ r63 Ez x +
r63 Ez y + 2 = 1
n2o
n2o
ne
11

x
x

KDP Example
Equating
to

"
!
"
1
1
z !2
!2
!2
+ r63 Ez x +
r63 Ez y + 2 = 1
n2o
n2o
ne
x!2
y !2
z !2
+ 2 + 2 =1
n2x!
ny !
nz !

gives

so
n!x no

"
1
1
+
r
E
=
63 z
n2o
n!2
x
!
"
1
2
n!2
x = no
1 + n2o r63 Ez
2
2
n!2
x no (1 no r63 Ez )

1
1 n2o r63 Ez
2

"

n!y no
12

for Ez<<1/(no2r63)=4x1010 V/m

1
1 + n2o r63 Ez
2

"

n!z = ne

Longitudinal KDP Modulator

In a KDP Pockels cell with an
electric field along the z-axis
=

no r63 EL = n3o r63 V

c
c

Independent of L. For light polarized

in the x or y
n =

giving

nef f =

1 3
n r63 Emax
2 o

1 3
n r63 Vmax k0 sincL
2 o

so the modulation depth is maximized for L0

Longitudinal KDP Modulator

For this to be used as a phase
modulator the light must be polarized
along x or y and the phase shift is
= knL =

3
n r63 V
o

The half-wave voltage is

V =

n3 r63

and the modulation depth is

=

3
Vm
n r63 Vm =

Longitudinal KDP Modulator

Pout/Pin

For this to be used as an amplitude

modulator the polarization rotation
produced when the input light is along
x or y needs to be converted into
amplitude change1 by an
output polarizer such
that T=sin2(/2)0.75
A quarter wave 0.5plate
can add an additional
0.25
/2 static birefringence
to bias the output for
maximum modulation

0.25!

0.5!

0.75!

Longitudinal KDP Modulator

The birefringence of this system is
=

2 3

Vm
+
n r41 Vm sin m t = +
sin m t
2

2
V

giving a transmission of
1
T =
2

Vm
1+
sin m t
V

"

In any such amplitude modulator half of

the power in the optical beam is
dumped.

Transverse Modulators
modulation voltage

Long interaction region

Low half-wave voltages

Limited acceptance angle

Modulation depth proportional to VL/d

17

light beam

LiNbO3 Example
LiNbO3 is a trigonal crystal with 3m symmetry,
therefore it is uniaxial with an electrooptic
tensor of the form

rik

0
0

0
=
0

r51
r22

r22
r22
0
r51
0
0

r13
r13

r33

0
0

For propagation along y, and an electric field

applied along z
x2

giving

1
+ r13 E
n2o

"

+ y2

1
nx = no n3o r13 E,
2

1
+ r13 E
n2o

18

"

+ z2

1
+ r33 E
n2e

1
nz = ne n30 r33 E
2

"

=1

LiNbO3 Example
Giving
"
1! 3
3
nz nx = (ne n0 )
n r33 n0 r13 E
2 e

for a birefringence of
=

"L
2
! 3
(ne n0 ) L
ne r33 n30 r13
V

The half-wave voltage is

V =

L n3e r33 n30 r13

Static birefringence term can be tuned to

provide /2 phase shift of bias for use as an
amplitude modulator
19

Optical Feedback Amplitude

Modulators
Fabry-Perot cavity transmission with identical
reflectivity mirrors is given by
2

T =

(1 R)
2

(1 R) + 4R sin2

1.5

0.5

2!

3!

=
-0.5

Vm
20 V

am = F

2
nL

4!

dT
d

"

1
2

Optical Feedback Phase Modulators

Fabry-Perot cavity reflectivity with 100%
reflectivity end mirror is given by
r = ei

R + e2i

=
1 Re2i

= 2 tan1

"

1+ R
tan
1 R

0.5!

2!

2
nL

2
=
nL

-0.5!

-!

For small deviations

from resonance
"
!

= 2 tan1

1+ R
V
tan
1 R 21 V

1+ R V

1 R V

High Frequency Design Considerations

Electrodes on crystal form a capacitor that can
limits the speed of electrical modulation when
connected to a source with finite output
impedance (Rs=50 is typical)
V m Rs
Ceom

Veom =

1
iC

Rs +

1
iC

Vm

The characteristic frequency of this low-pass

filter is fc=1/(2RsCeom). For a typical EOM
Ceom=20 pF giving 160 MHz. The EOM can not
operate efficiently above this frequency in this
configuration.
22

Parallel Resonant circuits

An inductor in parallel with the EOM can raise
the impedance of the EOM
!V!eom!= ! R!load! !Vm! ! to at a frequency
Rs + Rload

f=

V m Rs

Lload
Rload

2 Lload Ceom

Ceom

A parallel resistor Rload is added to limit the

impedance to that of the transmission line
(i.e. the cable) to prevent reflections that
would interfere destructively at the EOM
giving a usable voltage on the EOM at the
Rload
=
Vm
resonant frequency Veom
23
R +R
s

load

Parallel Resonant circuits

The resonant circuit has a bandwidth

1
2Rload Ceom

and requires a power of the form

2m 2 A"
P =
8 2 L(n3 r)2

to reach a modulation depth of m in a crystal

of cross sectional area A, dielectric constant
, length L
24

Series Resonant circuits

V m Rs

Lload
Rload

Ceom

An inductor in series with the EOM can allow

amplification of the modulation voltage at the
resonant frequency f0 = 0 = 1
2

2 Lload Ceom

The frequency dependent voltage divider gives

Veom =

Xc ()
Vm
X
()
+
X
()
+
R
+
R
! c! ! !l ! ! load
! ! !s !

!! !
frequency

|Veom | =

at the resonant

1
Vm
0 (Rs + Rload )Ceom

for Rs=Rload=50, C=20 pF and f0=10 MHz

25
Veom/Vm80

Transit Time Limitations

Weve seen that high frequency modulation can
get averaged out when a wave spends a large
fraction of a modulation period in the crystal
!
"
1
1

2 vp
vm

nef f
= sinc(L)
n

For a value of L=/2 the modulation is reduced

to 0.64 of the unaveraged modulation depth.
Calling the frequency at which this occurs fc, the
cutoff frequency for useful modulation, we get for
vm= (i.e. a lumped modulator)
fc =

c
c
=
2
2nL

for L=3cm, n=2, we find fc=2.5 GHz

26

Traveling Wave Modulators

If the EOM electrodes are made into a
transmission line the phase mismatch can be
greatly improved. For vp=vm the transit time
limitation can be removed and modulation depth
increased by increasing crystal length

27

Geometrical Considerations
For maximum modulation depth in a transverse,
free-space modulator it is desirable to have a long
length L and a small width d.
Beam diffraction limits the maximum value for
L/d2. At the maximum value L/d2=n/(4S2) where
S is a numerical factor of order unity that
expresses how much larger the crystal aperture
must be than the be than the beam to avoid
unwanted clipping.
The beam waist should be in the
center of the crystal to minimize
w0 =

L
2n

28

Gaussian Beam Optics

A Gaussian beam has a transverse spatial profile
is of the form
E(r) = E0 er

/w(z)2

where the Gaussian beam width w(z) evolves

from a minimum of w0 at the waist according to
!

w2 (z) = w02 1 +

"

z
zr

#2 $

for propagation in the z-direction where

w02
zr =

is called the Rayleigh range

29

Beam Deflection
A pair of prisms cut from an electro-optic material oriented
such that a suitably applied electric field increases the index
of refraction in one prism, while decreasing it in the other
will produce a differential phase shift between rays going
through the top and bottom of the device

x z
y

A
B

The position of a wavefront at the output face is y=n(x)L

giving a wavefront tilt of =-dy/dx=-L dn/dx
This tilt can be measured in terms of the beam divergence
angle beam=/w0 to give the number of resolvable spots
that the beam deflector can produce when d=2w0 (confocal
dL dn
configuration) is
N30=
!
2 dx

Beam Deflection
In a KDP beam deflector where the crystals have their z-axis
anti-aligned the indices seen by ray A in the top crystal and
for ray B in the bottom crystal are
n3o
nB = no +
r63 Ez
2

n3o
nA = no
r63 Ez
2

x z
y

giving

A
B

N=

L 3
n r63 Ez
2 o

For N=1, =1/2 no3 r63 EzL=/ so almost the full half-wave
voltage is necessary to fully deflect the spot.
31

Guided Wave Optics

The limitations of diffraction can be overcome by
embedding the waveguide in the modulator
crystal

32

9_EO_Modulators 580-581.qxd.P

7/6/07

10:51 AM

Page 580

Laser & ASE Systems

Tunable Lasers

Electro-Optic Modulators

Femtosecond Laser
WDM Laser Sources
Benchtop
Laser Sources
HeNe Lasers
ASE Sources
EO-PM-NR-C1

Terahertz
Electro-Optic
Modulators

EO-AM-NR-C2
With EO-GTH5M

Thorlabs free-space electro-optic (EO) amplitude and phase lithium

niobate modulators combine crystal growth and electro-optic materials.
Our standard modulators use undoped lithium niobate. For higher-power
operation, we offer MgO-doped lithium niobate. The standard EO
modulators are broadband DC-coupled, and a high Q resonant model
option is available.
Our standard DC-coupled broadband EO modulators consist of an EO
crystal packaged in a housing optimized for maximum RF performance.
The RF drive signal is connected directly to the EO crystal via the SMA
RF input. An external RF driver supplies the drive voltage for the desired
modulation. The crystal may be modulated from DC up to the frequency
limits of the external RF driver.
For flexibility, Thorlabs also offers a second modulator option. Resonant
frequency modulators simplify the driver requirements for many
applications where the modulator is operated at a single frequency. A high
Q resonant tank circuit located inside the modulator boosts the low-level
RF input voltage from a standard function generator to the high voltage
needed to get full depth of modulation. Call our tech support team for
details on the specific resonant frequencies available.
EO Amplitude Modulator
The electro-optic amplitude modulator (EO-AM) is a Pockels cell type
modulator consisting of two matched lithium niobate crystals packaged in
a compact housing with an RF input connector. Applying an electric field
to the crystal induces a change in the indices of refraction (both ordinary
and extraordinary), giving rise to an electric field-dependent birefringence,
which leads to a change in the polarization state of the optical beam. The
EO crystal acts as a variable wave plate with retardance linearly dependent
on the applied electric field. By placing a linear polarizer at the exit, the

EO-HVA

Features

High Performance in a Compact Package

Broadband DC Coupled and High Q Resonant
Models for Low RF Drive
Standard Broadband AR and Custom Coatings
2mm Clear Aperture
SMA Female Modulation Input Connector
MgO-Doped Versions for High Power
DC to 100MHz
Custom OEM Versions Available

EO Amplitude Modulator Crystal Configuration

References
Yariv & Yeh Optical Waves in Crystals chapter 8

34