Exercise #10 - DLTS

November 20, 2016

Exercise
The deep-level transient spectroscopy data in Fig. P5.9 were obtained by the boxcar method on
a Schottky barrier diode on a p-type Si substrate. The diode area is 0.02 cm2 and the diode bias
voltage was varied from zero to reverse bias voltage of 5V during the measurement. Ksi = 11.7,
p = 1.78 1021 cm2 s1 K 2 , NA = 1015 cm3 , Vbi = 0.87V . Determine ET Ev , Nt , and the intercept p
for each of the impurities.

Figure 1: P5.9

Solution
Estimation of Et1 Ev , p1 , Et2 Ev and p2 for each DLTS peak (max. 3 points)
The emission time constant is calculated as
p,max =

t2 t1
ln( tt21 )

(1)

e,max is the emission time constant of each DLTS peak, which also defines the temperature at
which the capacitance transient is maximized. With the DLTS data and rate windows shown in
1

figure 1, the emission time constants can be estimated through Eq.1 and the values are listed in
the table below together with the corresponding temperature.
t1 -t2
0.5 ms - 1 ms
1 ms - 2 ms
2 ms - 4 ms
4 ms - 8 ms

p,max
7.21 104
1.44 103
2.89 103
5.77 103

T - 1st peak
202 K
195 K
190 K
185 K

s
s
s
s

T - 2nd peak
305 K
295 K
287 K
279 K

The dependence of ep as a function of the temperature is defined by the following equation

Et Ev

p,max

e kT
=
p p T 2

(2)

The defect parameters Ev Et and p can be determined thorough a linear fit of the quantity ep T 2
plotted in logarithmic scale as a function of T1 . Specifically, Eq.2 can be rearranged as follows


1
Et Ev
2
ln(p,max T ) = ln
+
(3)
p p
kT
and the defect parameters are determined by the slope and the y-intercept of the line that fits to
the values if ep T 2 calculated from the values listed in the table above. Figure 2 shows the linear
fit together with the values of the slope and y-intercept associated to each DLTS peak.

Figure 2: Arrhenius plot of the emission time constants as a function of the temperature
The extracted defect parameters are listed in the table below
Peak 1
Peak 2

Et Ev
0.54 eV
0.36 eV

p
7.14 1015 cm2
2.34 1015 cm2

Estimation of the trap density Nt1 and Nt2

The capacitance variation between times t1 and t2 is defined by the following equation


t
t
Nt
1
2
Cmax =
C0 e h,max e h,max
2Na

(4)

such that the defect density is calculated as

Nt =

2Na Cmax


t
t
2
1
C0 e h,max e h,max

(5)

where C0 is the capacitance of the Schottky junction under reverse bias (V = 5 V ) calculated as
s
qKSi 0 Na
= 7.52 1011 F
(6)
C0 = A
2(Vbi V )
From the given DLTS curves we find that Cmax1 = 1.88 1014 F for the first peak and Cmax2 =
8 1015 F for the second. The insertion of these values into Eq.5 yields the following result:
Peak 1
Peak 2

Nt
2 1012 cm3
8.52 1011 cm3

Value
8,61E05
1,78E+21

Parameters
K
p

Unit
eV/T
cm2/(s*K)

t1

t2

Emissionrate

Ksi

11,7

7,21E04

5,00E04

1,00E03

7,21E04

8,85E14

F/cm

295

1,44E03

1,00E03

2,00E03

1,44E03

Si

1,04E12

F/cm

285
280

2,88E03
5,77E03

2,00E03 4,00E03
4,00E03 8,00E03

2,89E03
5,77E03

A
q
NA

0,02
1,60E19
1,00E+15

cm
C
cm3

C0
r
CMAX1

7,51E11
2
1,90E14

CMAX2

8,00E15

Defect1
Tpeak

Emissionrate

305

Tpeak
202
195

Defect2
Emissionrate
7,21E04
1,44E03

190
185

2,88E03
5,77E03

Defect1
FitDefect1
1/T
m
q
0,0032787 4,205752133
0,0033898 4,832226473 6257,685 16,35666
0,0035088 5,456401301
0,0035714 6,114149327

Defect2

FitDefect2
m
q
3,381663974
4,004274877 4217,30
17,55

y=6257,7x 16,357

ln(emT2)

1/T
0,0049505
0,0051282
0,0052632
0,0054054

y=4217,3x 17,545

4,645471085
5,285281771
4

Defect1Parameters
EvEt
0,53878665
eV
cm2
p
7,13E15
cm3
Nt1
2,02E+12

3
0,002

0,0025

0,003

0,0035

0,004

1/T[1/K]

Defect2Parameters
EvEt
0,36
eV
cm2
p
2,34E14
cm3
Nt2
8,52E+11

0,0045

0,005

0,0055

0,006