Professional Documents
Culture Documents
Stp6Nk90Z - Stp6Nk90Zfp STB6NK90Z
Stp6Nk90Z - Stp6Nk90Zfp STB6NK90Z
com
www.DataSheet4U.com
STP6NK90Z - STP6NK90ZFP
STB6NK90Z
N-CHANNEL 900V - 1.56 - 5.8A TO-220/TO-220FP/D2PAK
Zener-Protected SuperMESHPower MOSFET
TYPE
STP6NK90Z
STP6NK90ZFP
STB6NK90Z
VDSS
RDS(on)
ID
Pw
900 V
900 V
900 V
<2
<2
<2
5.8 A
5.8 A
5.8 A
140 W
30 W
140 W
3
1
TO-220
TO-220FP
3
1
D2PAK
DESCRIPTION
The SuperMESH series is obtained through an
extreme optimization of STs well established stripbased PowerMESH layout. In addition to pushing
on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the
most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products.
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
LIGHTING
4U
.co
ORDERING INFORMATION
MARKING
PACKAGE
PACKAGING
STP6NK90Z
P6NK90Z
TO-220
TUBE
STP6NK90ZFP
P6NK90ZFP
TO-220FP
TUBE
B6NK90Z
D2PAK
Sh
eet
SALES TYPE
ww
w.D
ata
STB6NK90ZT4
March 2003
1/12
www.DataSheet4U.com
www.DataSheet4U.com
Parameter
Value
Unit
STP6NK90Z / STB6NK90Z
VDS
VDGR
VGS
STP6NK90ZFP
900
900
30
ID
5.8
5.8 (*)
ID
3.65
3.65 (*)
23.2
23.2 (*)
140
30
Derating Factor
1.12
0.24
W/C
IDM ()
PTOT
VESD(G-S)
dv/dt (1)
4000
4.5
V/ns
Viso
Tj
Tstg
--
2500
-55 to 150
THERMAL DATA
D2PAK
TO-220
Rthj-case
Rthj-pcb
TO-220FP
Unit
4.2
C/W
0.89
60
C/W
Rthj-amb
62.5
C/W
Tl
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
5.8
EAS
300
mJ
IAR
taS
hee
t4U
.co
Parameter
Gate-Source Breakdown
Voltage
Test Conditions
Igs= 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
ww
w.D
a
2/12
www.DataSheet4U.com
www.DataSheet4U.com
Parameter
Test Conditions
Min.
Typ.
Max.
Drain-source
Breakdown Voltage
ID = 1mA, VGS = 0
IDSS
1
50
A
A
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = 20V
10
VGS(th)
RDS(on)
Static Drain-source On
Resistance
V(BR)DSS
900
Unit
3.75
4.5
1.56
Typ.
Max.
Unit
DYNAMIC
Symbol
gfs (1)
Ciss
Coss
Crss
Coss eq. (3)
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Test Conditions
Min.
1350
130
26
pF
pF
pF
70
pF
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
VDD = 450 V, ID = 3 A
RG = 4.7 ,VGS = 10 V
(Resistive Load see, Figure 3)
Qg
Qgs
Qgd
Min.
Typ.
Max.
Unit
17
20
ns
ns
46.5
8.5
25
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VDD = 450 V, ID = 3 A
RG = 4.7 , VGS = 10 V
(Resistive Load see, Figure 3)
45
20
ns
ns
tr(Voff)
tf
tc
11
12
20
ns
ns
ns
taS
hee
t4U
.co
td(off)
tf
Parameter
Test Conditions
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
VSD (1)
Forward On Voltage
trr
Qrr
IRRM
Min.
Typ.
840
5880
14
Max.
Unit
5.8
23.2
A
A
1.6
V
ns
nC
A
ww
w.D
a
3/12
www.DataSheet4U.com
www.DataSheet4U.com
Output Characteristics
Transfer Characteristics
ww
w.D
ata
Sh
eet
4U
.co
4/12
www.DataSheet4U.com
www.DataSheet4U.com
Capacitance Variations
ww
w.D
ata
Sh
eet
4U
.co
m
Transconductance
5/12
www.DataSheet4U.com
www.DataSheet4U.com
ww
w.D
ata
Sh
eet
4U
.co
6/12
www.DataSheet4U.com
www.DataSheet4U.com
ww
w.D
ata
Sh
eet
4U
.co
7/12
www.DataSheet4U.com
www.DataSheet4U.com
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
4.40
4.60
0.173
0.181
1.23
1.32
0.048
0.051
2.40
2.72
0.094
D1
0.107
1.27
0.050
0.49
0.70
0.019
0.027
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
D1
L4
8/12
H2
G1
F
Dia.
F2
ww
w.D
ata
Sh
eet
4U
.co
m
F1
L2
L5
L9
L7
L6
L4
P011C
www.DataSheet4U.com
www.DataSheet4U.com
DIM.
MIN.
4.4
inch
TYP
MAX.
MIN.
TYP.
MAX.
4.6
0.173
0.181
2.5
2.7
0.098
0.106
2.5
2.75
0.098
0.108
0.45
0.7
0.017
0.027
0.75
0.030
0.039
F1
1.15
1.5
0.045
0.067
F2
1.15
1.5
0.045
0.067
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
10
10.4
0.393
0.409
L2
16
0.630
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
L5
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
L7
9.3
0.354
0.366
3.2
0.118
0.126
L3
L3
ww
w.D
ata
Sh
G1
F1
L7
F2
eet
4U
.co
L6
L2
L5
1 2 3
L4
9/12
www.DataSheet4U.com
www.DataSheet4U.com
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
8.95
9.35
0.352
0.368
D1
E
0.315
10
E1
10.4
0.393
8.5
0.334
4.88
5.28
0.192
0.208
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
2.4
3.2
0.094
0.126
0.015
ww
w.D
ata
Sh
eet
4U
.co
m
V2
0.4
10/12
www.DataSheet4U.com
www.DataSheet4U.com
D PAK FOOTPRINT
mm
MIN.
DIM.
mm
MAX.
MIN.
A0
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
1.5
1.6
0.059 0.063
1.59
1.61
0.062 0.063
1.65
1.85
0.065 0.073
.co
11.4
11.6
0.449 0.456
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
50
1.574
0.25
23.7
24.3
Sh
MIN.
1.5
12.8
20.2
24.4
100
MAX.
12.992
0.059
13.2
0.504 0.520
26.4
0.960 1.039
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
MAX.
K0
eet
4U
MIN.
D1
ata
inch
MAX.
330
inch
0.075 0.082
0.933 0.956
ww
w.D
* on sales type
11/12
www.DataSheet4U.com
www.DataSheet4U.com
.co
ww
w.D
ata
Sh
eet
4U
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
12/12