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Guide Questions Final Exam 2016
Guide Questions Final Exam 2016
main criterion of MEMS is that there are at least some elements having some sort of
mechanical functionality whether or not these elements can move. The term used to
define MEMS varies in different parts of the world. In the United States they are
predominantly called MEMS, while in some other parts of the world they are called
Microsystems Technology or micromachined devices.
While the functional elements of MEMS are miniaturized structures, sensors,
actuators, and microelectronics, the most notable (and perhaps most interesting)
elements are the microsensors and microactuators. Microsensors and microactuators are
appropriately categorized as transducers, which are defined as devices that convert
energy from one form to another. In the case of microsensors, the device typically
converts a measured mechanical signal into an electrical signal.
Over the past several decades MEMS researchers and developers have
demonstrated an extremely large number of microsensors for almost every possible
sensing modality including temperature, pressure, inertial forces, chemical species,
magnetic fields, radiation, etc. Remarkably, many of these micromachined sensors have
demonstrated performances exceeding those of their macroscale counterparts. That is,
the micromachined version of, for example, a pressure transducer, usually outperforms a
pressure sensor made using the most precise macroscale level machining techniques.
Not only is the performance of MEMS devices exceptional, but their method of production
leverages the same batch fabrication techniques used in the integrated circuit industry
which can translate into low per-device production costs, as well as many other benefits.
Consequently, it is possible to not only achieve stellar device performance, but to do so
at a relatively low cost level. Not surprisingly, silicon based discrete microsensors were
quickly commercially exploited and the markets for these devices continue to grow at a
rapid rate.
Inertial Sensing
MEMS inertial sensors, specifically accelerometers and gyroscopes, are quickly
gaining market acceptance. For example, MEMS accelerometers have displaced
conventional accelerometers for crash air-bag deployment systems in automobiles. The
previous technology approach used several bulky accelerometers made of discrete
components mounted in the front of the car with separate electronics near the air-bag
and cost more than $50 per device. MEMS technology has made it possible to integrate
the accelerometer and electronics onto a single silicon chip at a cost of only a few
dollars. These MEMS accelerometers are much smaller, more functional, lighter, more
reliable, and are produced for a fraction of the cost of the conventional macroscale
accelerometer elements. More recently, MEMS gyroscopes (i.e., rate sensors) have been
developed for both automobile and consumer electronics applications. MEMS inertial
sensors are now being used in every car sold as well as notable customer electronic
handhelds such as Apple iPhones and the Nintendo Wii.
16.24
(a) Cite several reasons why fiberglass reinforced composites are utilized extensively.
1) care must be exercised in handlng the fibers inasmuch as they are susceptible
to
surface damage
2) they are lacking in stiffness in comparison to other fibrous composites
3) they are limited as to maximum temperature use
18.D8
The base semiconducting material used in virtually all of our modern integrated circuits
is silicon. However, silicon has some limitations and restrictions. Write an essay
comparing the properties and applications (and/or potential applications) of silicon and
gallium arsenide.
For Silicon,
1) being an elemental semiconductor, it is cheaper to grow in single-crystalline
form
2) because of its electron band structure, it is best used in transistors
3) electronic processes are relatively slow due to the low mobilities for electron and
holes
For Gallium-Arsenide
1) it is much more expensive to produce inasmuch as it is a compound
semiconductor
2) because of its electron band structure it is best used in light-emitting diodes and
semiconducting lasers
3) its band gap maybe altered by alloying
4) electronic processes are more rapid than in Si due to the greater mobilities for
electrons and holes
5) absorption of electromagnetic radiation is greater in GaAs, and therefore,