This document discusses equations related to the intensity of light emitted from a semiconductor. The first equation gives the intensity of light emitted at time T1 relative to the initial intensity at time T0. The second equation expresses the intrinsic carrier concentration as proportional to the exponential of the band gap energy divided by the product of the Boltzmann constant and the absolute temperature.
This document discusses equations related to the intensity of light emitted from a semiconductor. The first equation gives the intensity of light emitted at time T1 relative to the initial intensity at time T0. The second equation expresses the intrinsic carrier concentration as proportional to the exponential of the band gap energy divided by the product of the Boltzmann constant and the absolute temperature.
This document discusses equations related to the intensity of light emitted from a semiconductor. The first equation gives the intensity of light emitted at time T1 relative to the initial intensity at time T0. The second equation expresses the intrinsic carrier concentration as proportional to the exponential of the band gap energy divided by the product of the Boltzmann constant and the absolute temperature.
This document discusses equations related to the intensity of light emitted from a semiconductor. The first equation gives the intensity of light emitted at time T1 relative to the initial intensity at time T0. The second equation expresses the intrinsic carrier concentration as proportional to the exponential of the band gap energy divided by the product of the Boltzmann constant and the absolute temperature.