Cuauhtmoc Surez A01206503

Computer Interfaces
Homework: Investigation on Ion Implantation
8/10/15
Ion Implantation
It is an engineering process by which ions of some material are inserted to
another by accelerating them with electric fields and impacting them into the solid.
It is used in the fabrication of semiconductor devices by doping with boron,
phosphorus or arsenic into silicon.

The advantages of this method are:

Precise control of dose and depth profile.

Low temperature.
Less sensitive to surface cleaning.
Dose uniformity.

The basic configuration of the ion implanter is the following:

Here, energetic ions penetrate the surface of the wafer and undergo a series
of multiple collisions with the atoms knocking down electrons or adding one more to
each of them (p-type or n-type semiconductor).
Bibliography:
(2010). Ion Implantation. University of Berkeley. Lecture 08. Recovered from:
http://www-inst.eecs.berkeley.edu/~ee143/fa10/lectures/Lec_08.pdf