2SD2318

Transistors

High-current gain Power Transistor

(60V, 3A)
2SD2318

Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Limits

Unit

VCBO
VCEO

80
60
6
3
4.5

V
V
V
A
A(Pulse)
W

VEBO

Collector current

IC

Collector power dissipation

PC

Junction temperature
Storage temperature

Tj
Tstg

1
15
150
-55~+150

1.5

5.1
6.5
0.5

C0.5

2.5
9.5

W(Tc=25C)
C
C

* Single pulse Pw=100ms

!Packaging specifications and hFE

Type
Package
hFE
Code
Basic ordering unit (pieces)

2SD2318
CPT3
UV
TL
2500

!Electrical characteristics (Ta=25C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage

BVCBO
BVCEO

V
V
V
A

IC=50A
IC=1mA

A
V

VEB=6V

VCE(sat)

80
60
6
-

Base-emitter saturation voltage

VBE(sat)

1.5

hFE
fT

560
-

50
60

1800
-

MHz

DC current transfer ratio

Transition frequency
Output capacitance

* Measured using pulse current.

BVEBO
ICBO
IEBO

Cob

100
100
1.0

pF

Conditions

IE=50A
VCB=80V
IC/IB=2A/0.05A
IC/IB=2A/0.05A
VCE/IC=4V/0.5A
VCE=5V, IE=-0.2A, f=10MHz
VCB=10V, IE=0A, f=1MHz

*
*
*

2.3

0.9
2.3

1.5

0.65

0.8Min.

ROHM : CPT3
EIAJ : SC-63

Symbol

5.5

0.9
2.3

(3) (2) (1)

1.0
0.5

!Absolute maximum ratings (Ta=25C)

0.75

!External dimensions (Units : mm)

!Features
1) High DC current gain.
2) Low saturation voltage.
(Typ. VCE(sat) =0.5V at IC / IB=2A / 0.5A)
3) Complements the 2SB1639.

(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)