MCC56-12io1B

Thyristor Module VRRM = 2x 1200 V

I TAV = 60 A
VT = 1.24 V

Phase leg

Part number

MCC56-12io1B

Backside: isolated

3 1 2
6 7 5 4

Features / Advantages: Applications: Package: TO-240AA

Thyristor for line frequency Line rectifying 50/60 Hz Isolation Voltage: 3600 V~
Planar passivated chip Softstart AC motor control Industry standard outline
Long-term stability DC Motor control RoHS compliant
Direct Copper Bonded Al2O3-ceramic Power converter Soldering pins for PCB mounting
AC power control Base plate: DCB ceramic
Lighting and temperature control Reduced weight
Advanced power cycling

Terms Conditions of usage:

The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20161222b

2016 IXYS all rights reserved

 MCC56-12io1B

Thyristor Ratings
Symbol Definition Conditions min. typ. max. Unit
VRSM/DSM max. non-repetitive reverse/forward blocking voltage TVJ = 25C 1300 V
VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25C 1200 V
I R/D reverse current, drain current VR/D = 1200 V TVJ = 25C 200 A
VR/D = 1200 V TVJ = 125C 5 mA
VT forward voltage drop I T = 100 A TVJ = 25C 1.26 V
I T = 200 A 1.57 V
I T = 100 A TVJ = 125 C 1.24 V
I T = 200 A 1.62 V
I TAV average forward current TC = 85 C T VJ = 125 C 60 A
I T(RMS) RMS forward current 180 sine 94 A
VT0 threshold voltage TVJ = 125 C 0.85 V
for power loss calculation only
rT slope resistance 3.7 m
R thJC thermal resistance junction to case 0.45 K/W
RthCH thermal resistance case to heatsink 0.20 K/W
Ptot total power dissipation TC = 25C 222 W
I TSM max. forward surge current t = 10 ms; (50 Hz), sine TVJ = 45C 1.50 kA
t = 8,3 ms; (60 Hz), sine VR = 0 V 1.62 kA
t = 10 ms; (50 Hz), sine TVJ = 125 C 1.28 kA
t = 8,3 ms; (60 Hz), sine VR = 0 V 1.38 kA
It value for fusing t = 10 ms; (50 Hz), sine TVJ = 45C 11.3 kAs
t = 8,3 ms; (60 Hz), sine VR = 0 V 10.9 kAs
t = 10 ms; (50 Hz), sine TVJ = 125 C 8.13 kAs
t = 8,3 ms; (60 Hz), sine VR = 0 V 7.87 kAs
CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25C 74 pF
PGM max. gate power dissipation t P = 30 s T C = 125 C 10 W
t P = 300 s 5 W
PGAV average gate power dissipation 0.5 W
(di/dt) cr critical rate of rise of current TVJ = 125 C; f = 50 Hz repetitive, IT = 150 A 150 A/s
t P = 200 s; di G /dt = 0.45 A/s;
I G = 0.45 A; V = VDRM non-repet., I T = 60 A 500 A/s
(dv/dt)cr critical rate of rise of voltage V = VDRM TVJ = 125C 1000 V/s
R GK = ; method 1 (linear voltage rise)
VGT gate trigger voltage VD = 6 V TVJ = 25 C 1.5 V
TVJ = -40 C 1.6 V
I GT gate trigger current VD = 6 V TVJ = 25 C 100 mA
TVJ = -40 C 200 mA
VGD gate non-trigger voltage VD = VDRM TVJ = 125C 0.2 V
I GD gate non-trigger current 10 mA
IL latching current tp = 10 s TVJ = 25 C 450 mA
IG = 0.45 A; di G /dt = 0.45 A/s
IH holding current VD = 6 V R GK = TVJ = 25 C 200 mA
t gd gate controlled delay time VD = VDRM TVJ = 25 C 2 s
IG = 0.45 A; di G /dt = 0.45 A/s
tq turn-off time VR = 100 V; I T = 150 A; V = VDRM TVJ =100 C 150 s
di/dt = 10 A/s dv/dt = 20 V/s t p = 200 s

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20161222b

2016 IXYS all rights reserved

 MCC56-12io1B

Package TO-240AA Ratings

Symbol Definition Conditions min. typ. max. Unit
I RMS RMS current per terminal 200 A
TVJ virtual junction temperature -40 125 C
T op operation temperature -40 100 C
Tstg storage temperature -40 125 C
Weight 81 g
MD mounting torque 2.5 4 Nm
MT terminal torque 2.5 4 Nm
d Spp/App terminal to terminal 13.0 9.7 mm
creepage distance on surface | striking distance through air
d Spb/Apb terminal to backside 16.0 16.0 mm
VISOL isolation voltage t = 1 second 3600 V
50/60 Hz, RMS; IISOL 1 mA
t = 1 minute 3000 V

Ordering Ordering Number Marking on Product Delivery Mode Quantity Code No.
Standard MCC56-12io1B MCC56-12io1B Box 36 452742

Similar Part Package Voltage class

MCMA65P1200TA TO-240AA-1B 1200
MCMA85P1200TA TO-240AA-1B 1200

Equivalent Circuits for Simulation * on die level T VJ = 125 C

I V0 R0 Thyristor

V 0 max threshold voltage 0.85 V

R0 max slope resistance * 2.5 m

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20161222b

2016 IXYS all rights reserved

 MCC56-12io1B

Outlines TO-240AA

3 1 2
6 7 5 4

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20161222b

2016 IXYS all rights reserved

 MCC56-12io1B

Thyristor
1500 105 120
50 Hz, 80% VRRM VR = 0 V DC
180 sin
100 120
60
30

1000 80
I2t
ITSM ITAVM
IFSM TVJ = 45C 104 60
TVJ = 45C

[A] [A]
[A2s]
500 TVJ = 125C 40
TVJ = 125C

20

0 103 0
10-3 10-2 10-1 100 101 1 2 3 6 8 10 0 50 100 150
t [s] t [ms] TC [C]
Fig. 1 Surge overload current Fig. 2 I2t versus time (1-10 ms) Fig. 3 Maximum forward current
ITSM, IFSM: Crest value, t: duration at case temperature

150 10
RthJA [K/W] 1: IGT, TVJ = 125C
0.8 2: IGT, TVJ = 25C
3: IGT, TVJ = -40C
1

1.2
100
1.5
VG
PT 2 3
1 2 6
2.5
5
[W] 1
3 4
[V]
50 DC
180 sin 4
120
60
30 4: PGAV = 0.5 W
5: PGM = 5 W
IGD, TVJ = 125C
6: PGM = 10 W
0 0.1
0 20 40 60 80 0 50 100 150 100 101 102 103 104
ITAVM, IFAVM [A] TA [C] IG [mA]
Fig. 4 Power dissipation vs. onstate current and ambient temperature (per thyristor/diode) Fig. 5 Gate trigger charact.

600 1000
RthKA [K/W] TVJ = 25C
0.1
500
0.15

0.2
typ. Limit
400 100
0.25

Ptot tgd
0.3
300
0.4 [s]
[W]
0.5
200 10
0.6
Circuit
B6
3x MCC56 or
100
3x MCD56

0 1
0 50 100 150 0 50 100 150 10 100 1000
IdAVM [A] TA [C] IG [mA]
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current Fig. 7 Gate trigger delay time
and ambient temperature

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20161222b

2016 IXYS all rights reserved

 MCC56-12io1B

Thyristor
600
RthJA [KW]
0.1
500
0.15

0.2
400
0.25
Ptot
0.3
300
0.4
[W]
Circuit 0.5
200 W3 0.6
3x MCC56 or
3x MCD56
100

0
0 50 100 0 50 100 150
IRMS [A] TA [C]
Fig. 8 Three phase AC-controller: Power dissipation vs. RMS output current
and ambient temperature

0.6
RthJC for various conduction angles d:
30
0.5 60
DC 0.450
120
180
180 0.470
0.4
DC 120 0.490
60 0.505
0.3
30 0.520

0.2
Constants for ZthJC calculation:

1 0.014 0.0150
0.1
2 0.026 0.0095

0
3 0.410 0.1750
10-3 10-2 10-1 100 101 102 103

Fig. 9 Transient thermal impedance junction to case (per thyristor)

0.8 RthJK for various conduction angles d:

30
60 DC 0.650
120
0.6 180 0.670
180
120 0.690
DC
60 0.705
30 0.720
0.4

Constants for ZthJK calculation:

0.2 1 0.014 0.0150

2 0.026 0.0095
3 0.410 0.1750
0
4 0.200 0.6700
10-3 10-2 10-1 100 101 102 103

Fig. 10 Transient thermal impedance junction to heatsink (per thyristor)

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20161222b

2016 IXYS all rights reserved