Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3

By D. A. Neamen Exercise Solutions

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Chapter 3
Exercise Solutions
Ex 3.1
1 Ex 3.3
E m 2
4 2m
3 / 2 2 eV

So
2 (a) N
h3
0
E dE

1
dE 2 m d m d
4 2m
3/ 2

2
E 3/ 2
2 eV
2
or h3 3 0

E

10
1.6 1012
19


4 2 9.11 10 31 3/ 2

m
9.11 10 31 10 5 6.625 10 34 3

1.76 10 6 m/s
or 1.76 10 4 cm/s
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2
3

2 1.6 10 19 3/ 2

3
1.28 10 28 m
Ex 3.2
or
At ka , we have 3
N 1.28 10 22 cm
sin a
1 8 cos a 4 2m
3/ 2
a 2 2 eV
(b) N E 3/ 2
From Example 3.2, we have 2 a 5.141 , h3 3 1eV

or E 2 7.958 10 19 J. 1.06286 10 56

At ka 2 , we see that 3 a 2 so
2mE 3

2
3

2 3 / 2 13 / 2 1.6 10 19 3/ 2

a 2
2 8.29 10 27 m 3
or or
N 8.29 10 21 cm 3
E3
2 2
2
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2ma 2

2 2 1.054 10 34 2 Ex 3.4

2 9.11 10 31 4.5 10 10 2
E

4 2m p 3/ 2

1.189 10 18 J N
E kT
h3
E E dE
Then
E E 3 E 2

4 2m p 3/2
2 E
E E
3/ 2
18 19
1.189 10 7.958 10 h 3
3 E kT
3.929 10 19 J
Or
3.929 10 19

4 2 0.56 9.11 10 31 3/ 2

E
1.6 10 19
2.46 eV
6.625 10 34 3

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2

1 0.0259 1.6 10
19
3/ 2

3
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3
By D. A. Neamen Exercise Solutions
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7.92 10 24 m 3
or
E EF 1
N 7.92 10 18 cm 3
exp
kT E EF
_______________________________________ 1 exp
kT
Ex 3.5
0.02
1
gi ! 10! 10 9 8! 45 E EF
1 exp

N i ! g i N i ! 8! 10 8! 8! 21 kT
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E EF E EF
Ex 3.6 exp 1 exp 1 0.02
kT kT
E EF
(a) f F E exp
kT
E c kT 4 E F
exp
kT
0.30 0.0259 4
exp
0.0259 Then
7.26 10 6
exp
E EF
0.02
E EF kT
(b) f F E exp
kT 1
E E F kT ln 3.9kT
0.30 0.0259 0.02
exp _______________________________________
0.0259
3.43 10 6
_______________________________________ Test Your Understanding Solutions
Ex 3.7 TYU 3.1
E EF At ka 2 , we see that 3 a 2 , so
f F E exp
kT 2mE 3
a 2
0.30 0.025 2
8 10 6 exp
kT or

exp
0.325
1.25 10 5 E3
2 2 2
kT 2ma 2
0.325

ln 1.25 10 5 11.736
2 2 1.054 10 34 2
kT

2 9.11 10 31 4.5 10 10 2

0.325 T 1.189 10 18 J
kT 0.02769 0.0259
11.736 300 At the other point, 4 a is in the range
so 2 4 a 3 . Then from
T 321 K sin 4 a
_______________________________________ 1 8 cos 4 a
4a
Ex 3.8 we find, by trial and error,
4 a 7.870 . Then
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________

E4
7.870 2 2 We have E E c C1 k 2
2ma 2 E c 0.32 E c 1.6 10 19

7.870 2 1.054 10 34 2

2
2 9.11 10 31 4.5 10 10
2

C1 10

10 10
1.8649 10 18 J
Then so that C1 5.1876 10 39
E g E 4 E3 We have
2 m 2
m
1.8649 10 18 1.189 10 18 2C1 m o 2 m o C1
6.762 10 19 J
or
6.762 10 19
1.054 10 34 2

Eg 4.23 eV 29.11 10 5.1876 10

31 39
1.6 10 19
or
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m
1.175
mo
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TYU 3.4
We have E E C 2 k 2
TYU 3.2 E
0.875 E 1.6 10 19
From Example 3.2, for ka , 2
1a

C 2 10

12 10
and E1 2.972 10 19 J.
so that C 2 2.0426 10 38
For 0 a and ka 0 , we have
sin a
1 8 cos a m p 2
a We have
By trial and error, a 2.529 rad. mo 2m o C 2
Then

1.054 10 34 2

29.11 10 2.0426 10
2mE 31 38
a 2.529
2
m p
or 0.2985
2.529 2 1.054 10 34 2
mo
E
2.529 2 2
2ma 2
2 9.11 10 31 4.5 10 10 2 _______________________________________

1.9258 10 19 J TYU3.5
1
Then
1 f F E 1
E EF
1 exp
E 2.972 10 19 1.9258 10 19
kT
1.046 10 19 J
or EF E
exp
1.046 10 19
kT
E 0.654 eV
1.6 10 19 (a)
_______________________________________ 0.35 0.0259 2
1 f F E exp
0.0259
TYU 3.3
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________
8.20 10 7
(b)
0.35 3 0.0259 2
1 f F E exp
0.0259
3.02 10 7

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TYU 3.6
We find
400
kT 0.0259 0.034533 eV
300
E c kT 4 E F
(a) f F E exp
kT

0.30 0.034533 4
exp
0.034533
4
1.31 10
0.30 0.034533
(b) f F E exp
0.034533
6.21 10 5
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TYU 3.7
We find
400
kT 0.0259 0.034533
300
(a)
0.35 0.034533 2
1 f F E exp
0.034533
2.41 10 5
(b)
0.35 3 0.034533 2
1 f F E exp
0.034533
8.85 10 6
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